9 research outputs found
Design and analysis of logic inverter using antimonide-based compound semiconductor junctionless transistor
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In this chapter several aspects of the electronic and phonon structure are
considered for the design and engineering of advanced thermoelectric materials. For
a given compound, its thermoelectric figure of merit, zT, is fully exploited only when
the free carrier density is optimized. Achieving higher zT beyond this requires the
improvement in the material quality factor B. Using experimental data on lead chalcogenides
as well as examples of other good thermoelectric materials, we demonstrate
how the fundamental material parameters: effective mass, band anisotropy, deformation
potential, and band degeneracy, among others, impact the thermoelectric
properties and lead to desirable thermoelectric materials. As the quality factor B is
introduced under the assumption of acoustic phonon (deformation potential) scattering,
a brief discussion about carrier scattering mechanisms is also included. This
simple model with the use of an effective deformation potential coefficient fits the
experimental properties of real materials with complex structures and multi-valley
Fermi surfaces remarkably well鈥攚hich is fortunate as these are features likely found
in advanced thermoelectric materials