5 research outputs found
Hole mobility in zincblende c-GaN
We consider the nonequilibrium thermodynamic state of carriers in III-nitrides, and calculate the mobility of holes in cubic GaN layers under electric fields of low intensity. The contribution of different scattering mechanisms to the mobility is analyzed, and the relevance of each one is characterized. Satisfactory agreement with recently published experimental data is obtained. (C) 2004 American Institute of Physics.9594914491
Topological Crystalline Insulators in the SnTe Material Class
Topological crystalline insulators are new states of matter in which the
topological nature of electronic structures arises from crystal symmetries.
Here we predict the first material realization of topological crystalline
insulator in the semiconductor SnTe, by identifying its nonzero topological
index. We predict that as a manifestation of this nontrivial topology, SnTe has
metallic surface states with an even number of Dirac cones on high-symmetry
crystal surfaces such as {001}, {110} and {111}. These surface states form a
new type of high-mobility chiral electron gas, which is robust against disorder
and topologically protected by reflection symmetry of the crystal with respect
to {110} mirror plane. Breaking this mirror symmetry via elastic strain
engineering or applying an in-plane magnetic field can open up a continuously
tunable band gap on the surface, which may lead to wide-ranging applications in
thermoelectrics, infrared detection, and tunable electronics. Closely related
semiconductors PbTe and PbSe also become topological crystalline insulators
after band inversion by pressure, strain and alloying.Comment: submitted on Feb. 10, 2012; to appear in Nature Communications; 5
pages, 4 figure
Multifunctional nanostructured Co-doped ZnO: Co spatial distribution and correlated magnetic properties
The correlation between the structural and magnetic properties of nanoparticulated Co-doped ZnO is reported and a kinetic-thermodynamic model for the processes of nucleation and growth of the nanoparticles is proposed
Defect induced room temperature ferromagnetism in high quality Co-doped ZnO bulk samples
The nature of the often reported room temperature ferromagnetism in transition metal doped oxides is still a matter of huge debate. Herein we report on room temperature ferromagnetism in high quality Co-doped ZnO (Zn1âxCoxO) bulk samples synthesized via standard solid-state reaction route. Reference paramagnetic Co-doped ZnO samples with low level of structural defects are subjected to heat treatments in a reductive atmosphere in order to introduce defects in the samples in a controlled way. A detailed structural analysis is carried out in order to characterize the induced defects and their concentration. The magnetometry revealed the coexistence of a paramagnetic and a ferromagnetic phase at room temperature in straight correlation with the structural properties. The saturation magnetization is found to increase with the intensification of the heat treatment, and, therefore, with the increase of the density of induced defects. The magnetic behavior is fully explained in terms of the bound magnetic polaron model. Based on the experimental findings, supported by theoretical calculations, we attribute the origin of the observed defect-induced-ferromagnetism to the ferromagnetic coupling between the Co ions mediated by magnetic polarons due to zinc interstitial defects