12 research outputs found
Crystal quality of InN thin films grown on ZnO substrate by radio-frequency molecular beam epitaxy
Properties of GaN epitaxial layers grown at high growth rates by metalorganic chemical vapor deposition
Mobility in n-doped wurtzite III-Nitrides
A study of the mobility of n-doped wurtzite III-Nitrides is reported. We have determined the nonequilibrium thermodynamic state of the III-Nitrides systems driven far away from equilibrium by a strong electric field in the steady state, which follows after a very fast transient. The dependence of the mobility (which depends on the nonequilibrium thermodynamic state of the sample) on the electric field strength is derived, which decreases with the strength of electric field. We analyzed the contributions to the mobility arising out of the different channels of electron scattering, namely, the polar optic, deformation, piezoelectric, interactions with the phonons, and with impurities. The case of n-InN, n-GaN, and n-AlN have been analyzed: as expected the main contribution comes from the polar-optic interactions in these strongly polar semiconductors. The other interactions are in decreasing order, the deformation acoustic, the piezoelectric, and the one due to impurities
Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaN
Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN
Series resistance calculation for the Metal-Insulator-Semiconductor Schottky barrier diodes
Optical properties of III-nitrides in electric fields
78.30.Fs III-V and II-VI semiconductors, 78.20.Jq Electrooptical effects,