15 research outputs found
China in innovative development of alternative energy advanced industrial technologies
The purpose of this article is to study the specifics of renewable energy development in China, including solar, as well as to identify the main factors limiting the ubiquity of solar energy in the country. Among the main objectives of the article, it makes sense to highlight the following: A study of historical preconditions for the formation of the renewable energy segment in the national energy sectors; an analysis of the main trends in socioeconomic and energy development in China; an evaluation of China’s activity in the exploitation of renewable energy sources; consideration of the most important prospects and limitations in the use of solar energy. © 2016, Econjournals. All rights reserved
Infrared reflection spectra of the films of topological insulator Pb
Infrared reflectivity spectra of the 700 nm thick topological insulator Pb1-xSnxSe films grown by the molecular beam epitaxy technique on ZnTe/GaAs substrates were studied. Using dispersion analysis of reflectivity spectra plasmon and phonon parameters for the samples under study were obtained
China in innovative development of alternative energy advanced industrial technologies
The purpose of this article is to study the specifics of renewable energy development in China, including solar, as well as to identify the main factors limiting the ubiquity of solar energy in the country. Among the main objectives of the article, it makes sense to highlight the following: A study of historical preconditions for the formation of the renewable energy segment in the national energy sectors; an analysis of the main trends in socioeconomic and energy development in China; an evaluation of China’s activity in the exploitation of renewable energy sources; consideration of the most important prospects and limitations in the use of solar energy. © 2016, Econjournals. All rights reserved
Infrared reflection spectra of the films of topological insulator Pb1-xSnxSe on the substrates ZnTe/GaAs
Infrared reflectivity spectra of the 700 nm thick topological insulator Pb1-xSnxSe films grown by the molecular beam epitaxy technique on ZnTe/GaAs substrates were studied. Using dispersion analysis of reflectivity spectra plasmon and phonon parameters for the samples under study were obtained