Technological mineralogy: development of a comprehensive assessment of titanium ores (exemplified by the Pizhemskoye deposit)

Technological mineralogy of titanium ores is the basis for assessing their complexity. It enables, from a unified standpoint, to trace the entire course of changes in mineral matter through operating procedures, including beneficiation, processing, and obtaining target industrial products. The study targets are Pizhemskoye ilmenite-leucoxene sandstones, which are distinguished by a complex polymineral composition. Along with the main ore components, there are other metals with different speciation (isomorphic admixture, independent mineral phases). The optimal set of mineralogical analysis methods for the predictive assessment of their further use is substantiated exemplified by titanium ores of the Pizhemskoye deposit, which are complex, noted for a variable content of iron oxides and contain rare earth metals. Examinations by X-ray phase analysis and scanning electron microscopy confirm that the main titanium phases of sandstones are pseudorutile and a polymineral aggregate, “leucoxene”. Considering the granulometric peculiarities of the magnetic and non-magnetic fractions of the gravity concentrate, the prospects of technologies for processing titanium raw materials are discussed. Along with the problems of obtaining high-quality raw materials, the transformations of mineral phases as a result of extreme impacts and their physicochemical properties as a consequence of isomorphic substitution of a part of Ti atoms with natural modifier agents (Fe and V) in the synthesis of titanium oxide nanostructures for industrial applications are considered (photocatalytic nanoreactor)

Mullite production: phase transformations of kaolinite, thermodynamics of the process

The growing demand for mullite raw materials, which meet industrial requirements originates the search for new and alternative sources, as well as efficient technologies for obtaining the target products (nanocomposites). The article suggests a method for obtaining mullite from kaolinite experimentally (Vezhayu-Vorykvinsky deposit, Russia). Structural kaolinite transformations (Al-Si-O-Me system), mineral phases transformations, and thermodynamics of the process have been studied. Based on the estimation of the thermodynamics of the reactions, the preferable reaction of mullite formation was determined. The article shows, that formation of the target product, mullite nanocomposite, has several intermediate phases (metakaolinite, pseudomullite). The transformations of the initial kaolinite structure include the removal of structural water and separation of the silica-oxygen tetrahedral and alumina-oxygen octahedral layers, the decomposition into free oxides, breaking of bonds between the silica-oxygen tetrahedrons and the partial increase in the coordination number of aluminium ions, the formation of mullite and cristobalite from free oxides. The proposed approach controls the ratio of Al2O3 and SiO2 phases at certain stages, which will further improve the mechanical and other properties of the matrix of the obtained raw materials for the target prototypes of industrial products

МЕТОД И УСТАНОВКА КОНТРОЛЯ ПЛОСКОСТНОСТИ КРЕМНИЕВЫХ ПЛАСТИН

The method was suggested and the laser control set-up was developed of the arrow bend and bend profile of the semiconductor wafers. It was established, that on the basis of determining the inclination angle of tangent at any point of the surface due to deflection registration of the r eflected laser beam from the position, corresponding to reflection from the ideally plat surface, by means of its scanning by one of the wafer diameters it is possible to determine its bend profile.Предложен метод и разработана установка лазерного контроля стрелы прогиба и профиля изгиба полупроводниковых пластин. Метод основан на регистрации отклонения отраженного лазерного луча от положения, соответствующего отражению от идеально плоской поверхности. Установлено, что по результатам определения угла наклона касательной в любой точке поверхности, определяемой путем сканирования полупроводниковой пластины лазерным лучом, возможно определение ее профиля изгиба

Effect of High Energy Ion Implantation on the Structure and Mechanical Properties of Aluminium Alloys

The effect of implantation of Ne⁺, Kr⁺, and Bi⁺ ions over the energy range 26-710 MeV on the structural-phase state and the mechanical properties of the aluminum-based alloys (Al-Cu, Al-Cu-Mg, Al-Cu-Zn, Al-Mn) was studied. The revealed peculiarities of variations in the structure, phase composition, and mechanical properties of aluminum alloys are attributed to the electron deceleration of ions making the principal contribution to the formation of radiation defects which enhance the diffusion processes in the targets

METHOD AND CONTROL SET-UP OF SILICON WAFER FLATNESS

The method was suggested and the laser control set-up was developed of the arrow bend and bend profile of the semiconductor wafers. It was established, that on the basis of determining the inclination angle of tangent at any point of the surface due to deflection registration of the r eflected laser beam from the position, corresponding to reflection from the ideally plat surface, by means of its scanning by one of the wafer diameters it is possible to determine its bend profile

Methods and mechanisms of gettering of silicon structures in the production of integrated circuits

Increasing the degree of integration of hardware components imposes more stringent requirements for the reduction of the concentration of contaminants and oxidation stacking faults in the original silicon wafers with its preservation in the IC manufacturing process cycle. This causes high relevance of the application of gettering in modern microelectronic technology. The existing methods of silicon wafers gettering and the mechanisms of their occurrence are considered

Influence of laser gettering on bipolar IC parameters

Представлены результаты влияния лазерного геттерирования на электрические параметры биполярных микросхем. Показано, что за счет уменьшения распространения линий скольжения, снижения плотности дислокаций в эпитаксиальной пленке и исключения возникновения проводящих шунтов в области активных и пассивных элементов, удается устранить деградацию электрических параметров интегральных микросхем, обеспечивая тем самым увеличение в два раза выход годных изделий. The results of the laser gettering on the electric parameters of the Bipolar microcircuits are presented. It is shown, that due to reduction of the of the slide lines spread, lowering down density of dislocations in the epitaxial film and exclusion of emergence of the conductive bypasses in the area of the active and passive elements, it is attainable to eliminate degradation of the IC electric parameters, thus ensuring the good percentage two times higher

Peculiarities of vertical scaling when creating bipolar microcircuits

Показано, что использование быстрых термических обработок в технологическом процессе создания интегральных микросхем позволяет формировать мелкозалегающие p-n-переходы за счет уменьшения перераспределения внедренной примеси при данной обработке без ухудшения их электрических характеристик. Разработана конструкция формирования n-p-n- и p-n-p-транзисторов, позволяющая провести вертикальное масштабирование интегральных микросхем в два раза без изменения топологических норм их проектирования.It is shown, that application of the fast thermal treatments in the technological process of creation of the integrated microcircuits ensures formation of the shallow bulk p-n-junctions due to reduction of redistribution of the implanted impurity with the given processing without deterioration of their electric characteristics. The formation design is developed of the n-p-n- and p-n-p-transistors, making it possible to perform the two times vertical scaling of the integrated microcircuits without variation of the layout rated norms of their design development