Computer simulation of field ion images of nanoporous structure in the irradiated materials

Computer simulation and interpretation of field ion microscopy images of ion irradiated platinum are discussed. Field ion microscopy technique provides direct precise atomic scale investigation of crystal lattice defects of atomically pure surface of material; at the same time it allows to analyze the structural defects in volume by controlled and sequential removal of surface atoms by electric field. Defects identification includes the following steps: at the first stage the type of crystalline structure and spatial orientation of crystallographic directions were determined. Thus, we obtain the data about exact position of all atoms of the given volume, i.e. the model image of an ideal crystal. At the second stage, the ion image was processed used the program to obtain the data about real arrangement of atoms of the investigated sample. At the third stage the program compares these two data sets, with a split-hair accuracy revealing a site of all defects in a material. Results of the quantitative analysis show that shape of nanopores are spherical or cylindrical, diameter on nanopores was varied from 1 to 5 run, their depth was fond to be from 1 to 9 nm. It was observed that nearly 40% of nanopores are concentrated in the subsurface layer 10 nm thick, the concentration of nanopores decreased linearly with the distance from the irradiated surface

Exact diagonalization solver for the extended dynamical mean-field theory

We present an efficient exact diagonalization scheme for the extended dynamical mean-field theory and apply it to the extended Hubbard model on the square lattice with nonlocal charge-charge interactions. Our solver reproduces the phase diagram of this approximation with good accuracy. Details on the numerical treatment of the large Hilbert space of the auxiliary Holstein-Anderson impurity problem are provided. Benchmarks with a numerically exact strong-coupling continuous-time quantum-Monte Carlo solver show better convergence behavior of the exact diagonalization in the deep insulator. Special attention is given to possible effects due to the discretization of the bosonic bath. We discuss the quality of real axis spectra and address the question of screening in the Mott insulator within extended dynamical mean-field theory.Comment: 12 pages, 8 figure