On the interdiffusion-based quantum cascade laser

Design procedure for the active region of current pumped quantum cascade laser is proposed, so to achieve maximal gain. Starting with an arbitrary smooth potential, a family of isospectral Hamiltonians with predefined energy spectrum is generated using the inverse spectral theory. By varying the relevant control parameter the potential shape is varied, inducing changes in transition dipole moments and electron–phonon scattering times, and the optimal potential which gives the largest gain is thus found. For purpose of realization, a simple step quantum-well structure with just a few layers is then designed so that in the post-growth heating-induced layer interdiffusion, it will acquire a shape as close as possible to the optimal smooth potentia

Second harmonic generation at the quantum-interference induced transparency in semiconductor quantum wells: The influence of permanent dipole moments

The influence of permanent dipole moments of quantized states on intersubband second harmonic generation based on quantum-interference induced transparency in semiconductor quantum wells is explored using the harmonic balance method. The permanent moments are found to be quite important: they affect the transparency condition, especially at larger pump intensities. Hence, both the conversion efficiency and the optimal interaction path length change significantly when accounting for the permanent moments, and the conversion efficiency is reduced

Dilute magnetic semiconductor quantum-well structures for magnetic field tunable far-infrared/terahertz absorption

The design of ZnCdSe–ZnMnSe-based quantum wells is considered, in order to obtain a large shift of the peak absorption wavelength in the far infrared range, due to a giant Zeeman splitting with magnetic field, while maintaining a reasonably large value of peak absorption. A triple quantum-well structure with a suitable choice of parameters has been found to satisfy such requirements. A maximal tuning range between 14.6 and 34.7 meV is obtained, when the magnetic field varies from zero to 5 T, so the wavelength of the absorbed radiation decreases from 85.2 to 35.7 μm with absorption up to 1.25% at low temperatures. These structures might form the basis for magnetic field tunable photodetectors and quantum cascade lasers in the terahertz range

Compound index for power quality evaluation and benchmarking

High level of delivered power quality (PQ) is becoming one of the key performance indicators for both contemporary and future power networks. The increased proliferation of converter connected generation and load in power networks, increased sensitivity to network disturbances of some of these new types of devices and requirements for more flexible operation of power networks led to the revision of some of PQ standards and introduction of modified or in some cases new requirements for PQ compliance. Although almost all PQ phenomena, with exception of voltage transients, are well defined and appropriate thresholds for individual phenomena are set in international standards, there is no standardised nor commonly accepted way to describe and evaluate the overall PQ performance at buses. This study presents an analytic hierarchy process (AHP) inspired methodology for assessing the overall PQ performance at a bus based on several different PQ phenomena considered simultaneously. Compound bus PQ index is defined using AHP to present the overall PQ performance at the bus with respect to voltage sag, harmonics and voltage unbalance. The application of the methodology is illustrated on a 295 bus generic distribution network

Optically pumped terahertz laser based on intersubband transitions in a GaN/AlGaN double quantum well

A design for a GaN/AlGaN optically pumped terahertz laser emitting at 34 µm (ΔE~36 meV) is presented. This laser uses a simple three-level scheme where the depopulation of the lower laser level is achieved via resonant longitudinal-optical-phonon emission. The quasibound energies and associated wave functions are calculated with the intrinsic electric field induced by the piezoelectric and the spontaneous polarizations. The structures based on a double quantum well were simulated and the output characteristics extracted using a fully self-consistent rate equation model with all relevant scattering processes included. Both electron-longitudinal-optical phonon and electron-acoustic-phonon interactions were taken into account. The carrier distribution in subbands was assumed to be Fermi–Dirac-like, with electron temperature equal to the lattice temperature, but with different Fermi levels for each subband. A population inversion of 12% for a pumping flux Φ=10(27) cm(–2) s(–1) at room temperature was calculated for the optimized structure. By comparing the calculated modal gain and estimated waveguide and mirror losses the feasibility of laser action up to room temperature is predicted

Magnetic field tunable terahertz quantum well infrared photodetector

A theoretical model and a design of a magnetic field tunable CdMnTe/CdMgTe terahertz quantum well infrared photodetector are presented. The energy levels and the corresponding wavefunctions were computed from the envelope function Schr¨odinger equation using the effective mass approximation and accounting for Landau quantization and the giant Zeeman effect induced by magnetic confinement. The electron dynamics were modeled within the self-consistent coupled rate equations approach, with all relevant electron-longitudinal optical phonon and electron-longitudinal acoustic phonon scattering included. A perpendicular magnetic field varying between 0 T and 5 T, at a temperature of 1.5 K, was found to enable a large shift of the detection energy, yielding a tuning range between 24.1 meV and 34.3 meV, equivalent to 51.4 μm to 36.1 μm wavelengths. For magnetic fields between 1 T and 5 T, when the electron population of the QWIP is spin-polarized, a reasonably low dark current of ≤1.4×10–² A/cm² and a large responsivity of 0.36−0.64 A/W are predicted

Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 mu m wavelengths

A criterion for strain balancing of wurtzite group-III nitride-based multilayer heterostructures is presented. Single and double strain-balanced GaN/AlGaN quantum well structures are considered with regard to their potential application in optoelectronic devices working at communication wavelengths. The results for realizable, strain-balanced structures are presented in the form of design diagrams that give both the intersubband transition energies and the dipole matrix elements in terms of the structural parameters. The optimal parameters for structures operating at lambda ~1.3 and 1.55 µm were extracted and a basic proposal is given for a three level intersubband laser system emitting at 1.55µm and depopulating via resonant longitudinal optical(LO)phonons (h omega(LO)approximate to 90 meV). © 2003 American Institute of Physics

Voltage sag estimation in sparsely monitored power systems based on deep learning and system area mapping

This paper proposes a voltage sag estimation approach based on a deep convolutional neural network. The proposed approach estimates the sag magnitude at unmonitored buses regardless of the system operating conditions and fault location and characteristics. The concept of system area mapping is also introduced via the use of bus matrix, which maps different patches in input matrix to various areas in the power system network. In this way, relevant features are extracted at various local areas in the power system and used in the analysis for higher level feature extraction, before feeding into a fully-connected multiple layer neural network for sag classification. The approach has been tested on the IEEE 68-bus test network and it has been demonstrated that the various sag categories can be identified accurately regardless of the operating condition under which the sags occur

Voltage dip immunity aspects of power-electronic equipment : recommendations from CIGRE/CIRED/UIE JWG C4.110

This paper presents some of the results from an international working group on voltage-dip immunity. The working group has made a number of recommendations to reduce the adverse impact of voltage dips. Specific recommendations to researchers and manufacturers of powerelectronic equipment are considering all voltage dip characteristics early in the design of equipment; characterize performance of equipment by means of voltage-dip immunity curves; and made equipment with different immunity available