200 research outputs found
Generalized Muller-Kern formula for equilibrium thickness of a wetting layer with respect to the dependence of the surface energy of island facets on the thickness of the 2D layer
Experimental results indicate a particular importance of such a value as the equilibrium thickness of the wetting layer during epitaxial growth according to the StranskiβKrastanow mechanism in systems with a lattice mismatch. In this paper the change in free energy during the transition of atoms from the wetting layer to the island in such systems is considered. Recent experimental results also show that the surface energy of the island's facets depends upon the thickness of the deposited material. So, in this paper the equilibrium thickness of the wetting layer, at which transition from 2D to 3D growth becomes energetically favorable, is calculated with the assumption that the specific energy of the island's facets depends upon the wetting layer thickness. In this approximation a new generalized MullerβKern formula is obtained. As an illustration of the proposed method, an example of a numerical calculation according to the new formula for the material system of germanium on a silicon (001) surface is given. The result for the found equilibrium thickness of the wetting layer is rather unexpected since it differs from the value obtained in the bounds of the traditional MullerβKern model
Kinetics of epitaxial formation of nanostructures by Frank-van der Merwe, Volmer-Weber and Stranski-Krastanow growth modes
Nowadays, two-dimensional crystals (2D materials) and structures with quantum dots (0D materials) are considere
Changes in the electro-physical properties of MCT epitaxial films affected by a plasma volume discharge induced by an avalanche beam in atmospheric-pressure air
In this paper the influence of the plasma volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of epitaxial films HgCdTe (MCT) films are discussed. The experimental data show that the action of pulses of nanosecond volume discharge in air at atmospheric pressure leads to changes in the electrophysical properties of MCT epitaxial films due to formation of a near-surface high- conductivity layer of the n-type conduction. The preliminary results show that it is possible to use such actions in the development of technologies for the controlled change of the properties of MCT
Analysis of the 7x7 to 5x5 superstructure transition by RHEED in the synthesis of Ge on Si (111) in an MBE installation
In this paper, we consider the 7x7 to 5x5 superstructure transition during the synthesis of Ge epitaxial layers on a Si (111) surface in its temperature range from 250 to 700 Β°C. This transition is investigated by reflection high-energy electron diffraction (RHEED). As a result, the dependences of the critical thickness of the 7x7 to 5x5 superstructure transition on the substrate temperature are obtained for the first time
Parental alexithymia as a risk factor for teens alcohol use
The purpose of the randomized, cross-sectional and correlational study was to investigate the presence, strength and nature of the relationship of parental alexithymia with alcohol use by their children. The study used the sociological and psycho-diagnostic methods. The results of correlation studies have shown strong and highly significant positive relationships of teens alcohol use both with parental alexithymia and with the alexithymic construct factorial components. Parental alexithymia, as well as sensual, communicative and cognitive alexithymic construct components are risk factors of teens alcohol use.Π¦Π΅Π»ΡΡ ΡΠ°Π½Π΄ΠΎΠΌΠΈΠ·ΠΈΡΠΎΠ²Π°Π½Π½ΠΎΠ³ΠΎ, ΠΊΡΠΎΡΡ-ΡΠ΅ΠΊΡΠΈΠΎΠ½Π½ΠΎΠ³ΠΎ ΠΈ ΠΊΠΎΡΡΠ΅Π»ΡΡΠΈΠΎΠ½Π½ΠΎΠ³ΠΎ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ ΡΠ²Π»ΡΠ»ΠΎΡΡ ΠΈΠ·ΡΡΠ΅Π½ΠΈΠ΅ Π½Π°Π»ΠΈΡΠΈΡ, ΡΠΈΠ»Ρ ΠΈ, Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠ° ΡΠ²ΡΠ·ΠΈ Π°Π»Π΅ΠΊΡΠΈΡΠΈΠΌΠΈΠΈ ΡΠΎΠ΄ΠΈΡΠ΅Π»Π΅ΠΉ Ρ ΡΠΏΠΎΡΡΠ΅Π±Π»Π΅Π½ΠΈΠ΅ΠΌ Π°Π»ΠΊΠΎΠ³ΠΎΠ»Ρ ΠΈΡ
Π΄Π΅ΡΡΠΌΠΈ. ΠΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠ΅ ΠΏΡΠΎΠ²Π΅Π΄Π΅Π½ΠΎ Ρ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΠ΅ΠΌ ΡΠΎΡΠΈΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΈ ΠΏΡΠΈΡ
ΠΎΠ΄ΠΈΠ°Π³Π½ΠΎΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΌΠ΅ΡΠΎΠ΄ΠΎΠ². Π Π΅Π·ΡΠ»ΡΡΠ°ΡΡ ΠΊΠΎΡΡΠ΅Π»ΡΡΠΈΠΎΠ½Π½ΠΎΠ³ΠΎ Π°Π½Π°Π»ΠΈΠ·Π° ΠΏΠΎΠΊΠ°Π·Π°Π»ΠΈ ΡΠΈΠ»ΡΠ½ΡΠ΅ ΠΈ Π²ΡΡΠΎΠΊΠΎ Π·Π½Π°ΡΠΈΠΌΡΠ΅ ΠΏΠΎΠ·ΠΈΡΠΈΠ²Π½ΡΠ΅ ΡΠ²ΡΠ·ΠΈ ΡΠΏΠΎΡΡΠ΅Π±Π»Π΅Π½ΠΈΡ Π°Π»ΠΊΠΎΠ³ΠΎΠ»Ρ ΠΏΠΎΠ΄ΡΠΎΡΡΠΊΠ°ΠΌΠΈ Ρ Π°Π»Π΅ΠΊΡΠΈΡΠΈΠΌΠΈΠ΅ΠΉ ΡΠΎΠ΄ΠΈΡΠ΅Π»Π΅ΠΉ, Π° ΡΠ°ΠΊΠΆΠ΅ Ρ ΡΠ°ΠΊΡΠΎΡΠ½ΡΠΌΠΈ ΡΠΎΡΡΠ°Π²Π»ΡΡΡΠΈΠΌΠΈ Π°Π»Π΅ΠΊΡΠΈΡΠΈΠΌΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΊΠΎΠ½ΡΡΡΡΠΊΡΠ°. ΠΠ»Π΅ΠΊΡΠΈΡΠΈΠΌΠΈΡ ΡΠΎΠ΄ΠΈΡΠ΅Π»Π΅ΠΉ, Π° ΡΠ°ΠΊΠΆΠ΅ ΡΡΠ²ΡΡΠ²Π΅Π½Π½ΡΠΉ, ΠΊΠΎΠΌΠΌΡΠ½ΠΈΠΊΠ°ΡΠΈΠ²Π½ΡΠΉ ΠΈ ΠΊΠΎΠ³Π½ΠΈΡΠΈΠ²Π½ΡΠΉ ΠΊΠΎΠΌΠΏΠΎΠ½Π΅Π½ΡΡ Π°Π»Π΅ΠΊΡΠΈΡΠΈΠΌΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΊΠΎΠ½ΡΡΡΡΠΊΡΠ° ΠΏΡΠ΅Π΄ΡΡΠ°Π²Π»ΡΡΡ ΡΠΎΠ±ΠΎΠΉ Π·Π½Π°ΡΠΈΠΌΡΠ΅ ΡΠ°ΠΊΡΠΎΡΡ ΡΠΈΡΠΊΠ° ΡΠ°Π½Π½Π΅Π³ΠΎ ΡΠΏΠΎΡΡΠ΅Π±Π»Π΅Π½ΠΈΡ Π°Π»ΠΊΠΎΠ³ΠΎΠ»Ρ Π΄Π΅ΡΡΠΌΠΈ
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