18 research outputs found

    Determining the spin-orbit coupling via spin-polarized spectroscopy of magnetic impurities

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    We study the spin-resolved spectral properties of the impurity states associated to the presence of magnetic impurities in two-dimensional, as well as one-dimensional systems with Rashba spin-orbit coupling. We focus on Shiba bound states in superconducting materials, as well as on impurity states in metallic systems. Using a combination of a numerical T-matrix approximation and a direct analytical calculation of the bound state wave function, we compute the local density of states (LDOS) together with its Fourier transform (FT). We find that the FT of the spin-polarized LDOS, a quantity accessible via spin-polarized STM, allows to accurately extract the strength of the spin-orbit coupling. Also we confirm that the presence of magnetic impurities is strictly necessary for such measurement, and that non-spin-polarized experiments cannot have access to the value of the spin-orbit coupling.Comment: 26 pages, 6 figure

    RKKY interaction on the surface of three-dimensional Dirac semimetals

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    We study the RKKY interaction between two magnetic impurities located on the surface of a three-dimensional Dirac semimetal with two Dirac nodes in the band structure. By taking into account both bulk and surface contributions to the exchange interaction between the localized spins, we demonstrate that the surface contribution in general dominates the bulk one at distances larger than the inverse node separation due to a weaker power-law decay. We find a strong anisotropy of the surface term with respect to the spins being aligned along the node separation axis or perpendicular to it. In the many impurity dilute regime, this implies formation of quasi-one-dimensional magnetic stripes orthogonal to the node axis. We also discuss the effects of a surface spin-mixing term coupling electrons from spin-degenerate Fermi arcs.Comment: 7,5 pages, 3 figures (+4 pages of Appendixes

    Topology from triviality

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    We show that bringing into proximity two topologically trivial systems can give rise to a topological phase. More specifically, we study a 1D metallic nanowire proximitized by a 2D superconducting substrate with a mixed s-wave and p-wave pairing, and we demonstrate both analytically and numerically that the phase diagram of such a setup can be richer than reported before. Thus apart from the two “expected” well-known phases (i.e., where the substrate and the wire are both simultaneously trivial or topological), we show that there exist two peculiar phases in which the nanowire can be in a topological regime while the substrate is trivial and vice versa

    Photogalvanic effect in the HgTe/CdTe topological insulator due to edge-bulk optical transitions

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    We study theoretically the 2D HgTe/CdTe quantum well topological insulator illuminated by circularly polarized light with frequencies higher than the difference between the equilibrium Fermi level and the bottom of the conduction band (THz range). We show that electron-hole asymmetry results in spin-dependent electric dipole transitions between edge and bulk states, and we predict an occurrence of a circular photocurrent. If the edge state is tunnel-coupled to a conductor, then the photocurrent can be detected by measuring an electromotive force in the conductor, which is proportional to the photocurrent

    Characterizing p

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    Photogalvanic effects in topological insulators

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    <p>We discuss optical absorption in topological insulators and study possible photoelectric effects theoretically. We found that absorption of circularly polarized electromagnetic waves in two-dimensional topological insulators results in electric current in the conducting 1D edge channels, the direction of the current being determined by the light polarization. We suggest two ways of inducing such a current: due to magnetic dipole electron transitions stimulated by irradiation of frequency below the bulk energy gap, and due to electric dipole transitions in the bulk at frequencies larger than the energy gap with subsequent capture of the photogenerated carriers on conducting edge states.</p>
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