Mie-resonances, infrared emission and band gap of InN

Mie resonances due to scattering/absorption of light in InN containing clusters of metallic In may have been erroneously interpreted as the infrared band gap absorption in tens of papers. Here we show by direct thermally detected optical absorption measurements that the true band gap of InN is markedly wider than currently accepted 0.7 eV. Micro-cathodoluminescence studies complemented by imaging of metallic In have shown that bright infrared emission at 0.7-0.8 eV arises from In aggregates, and is likely associated with surface states at the metal/InN interfaces.Comment: 4 pages, 5 figures, submitted to PR

INCREASE OF RECEIVED BIOGAS VOLUMES FROM SOLID DOMESTIC WASTE LANDFILLS

В статье рассмотрена установка получения биогаза с полигонов твердых бытовых отходов, повышающей эффективность переработки субстрата за счёт контроля режима кислотности и температуры, а также обогащения извлекаемого биогаза.The article considered the installation of receiving biogas from solid domestic waste landfill, increasing the efficiency of processing the substrate by the control of acidity and temperature, and enrichment of recoverable biogas

THE PROJECT OF THE PHOTOVOLTAIC POWER STATION FOR ENERGY SUPPLY OF URFU CAMPUS № 8 ENERGY CONSUMPTION

The article considered the project of the photovoltaic power station for energy supply of URFU campus №8 energy consumption. The wiring schematic of the station has been provided, as well as the equipment has been chosen and described. Sun radiation in the territory of Yekaterinburg within the year has been calculated, a rational territorial location choice of solar batteries has been made. Feasibility study of the project has been implemented and payback period has been calculated.В статье рассмотрен проект фотоэлектрической станции (ФЭС) для снабжения энергопотребления 8 учебного корпуса УрФУ. Приведена принципиальная схема станции, выбрано и описано оборудование. Произведен расчет солнечной радиации, приходящей на территорию Екатеринбурга в течение года, сделан выбор рационального территориального расположения солнечных батарей. Выполнено технико-экономическое обоснование проекта и рассчитан срок его окупаемости

Transmission electron microscopy of GaN columnar nanostructures grown by molecular beam epitaxy

International audienceThe GaN columnar crystals of nanometric sizes have been grown by molecular beam epitaxy with high-frequency plasma initiation of nitrogen discharge. The types and distribution of defects in these nanostructures on the (0001) sapphire substrates are studied by transmission electron microscopy (TEM). It is revealed that inversion domains begin to form almost at the interface irrespective of the presence of an initial low-temperature buffer layer. The critical diameter of dislocation-free columns, their density, and mean sizes are determined. It is shown that the low-temperature buffer layer affects the density of dislocations, their spatial distribution, and the mean sizes of columns. The nanosizes of grown crystals suggest a further use of these crystals and the growth method for producing molecular-beam epitaxial quantum-size objects (quantum dots and wires) in a promising AlGaInN system