Generation of accelerated electrons in a gas diode with hot channel

Generation of fast electrons in an inhomogeneous medium composed of a hot channel (spark channel, laser plume, etc.) surrounded by air under normal conditions has been numerically analyzed. The model used makes it possible to carry out consistent calculation of the formation of subnanosecond gas discharge and generation of accelerated electrons under these conditions. The fast-electron current is found to consist of two pulses. One of them has an amplitude of 50 A, width of 30 ps, and electron energy of more than 100 keV. These electrons are generated in the hot channel. The other pulse has an amplitude of 170 A, width of 20 ps, and electron energy in the range of 8-50 keV. These electrons are generated in cold air. Since these pulses pass successively and barely overlap, the total width of fast-electron pulse is almost 50 ps. © 2013 Pleiades Publishing, Ltd

Raman and photoluminescence spectroscopy of SiGe layer evolution on Si(100) induced by dewetting

International audienceHigh temperature annealing of thick (40-100 nm) Ge layers deposited on Si(100) at $400 C leads to the formation of continuous films prior to their transformation into porous-like films due to dewetting. The evolution of Si-Ge composition, lattice strain, and surface morphology caused by dewetting is analyzed using scanning electron microscopy, Raman, and photoluminescence (PL) spectroscopies. The Raman data reveal that the transformation from the continuous to porous film proceeds through strong Si-Ge interdiffusion, reducing the Ge content from 60% to about 20%, and changing the stress from compressive to tensile. We expect that Ge atoms migrate into the Si sub-strate occupying interstitial sites and providing thereby the compensation of the lattice mismatch. Annealing generates only one type of radiative recombination centers in SiGe resulting in a PL peak located at about 0.7 and 0.8 eV for continuous and porous film areas, respectively. Since annealing leads to the propagation of threading dislocations through the SiGe/Si interface, we can tentatively associate the observed PL peak to the well-known dislocation-related D1 band

Particle entrapment as a feedback effect

We consider a suspension of polarizable particles under the action of traveling wave dielectrophoresis (DEP) and focus on particle induced effects. In a situation where the particles are driven by the DEP force, but no external forces are exerted on the fluid, the joint motion of the particles can induce a steady fluid flow, which leads to particle entrapment. This feedback effect is proven to be non-negligible even for small volume concentration of particles.Comment: 4 pages, 4 figures, submitte

СОВЕРШЕНСТВОВАНИЕ СИСТЕМЫ УПРАВЛЕНИЯ ЧЕЛОВЕЧЕСКИМИ РЕСУРСАМИ В ОБРАЗОВАТЕЛЬНОЙ СФЕРЕ

The article is devoted to the problem of formation of effective system of HUMAN RESOURCE MANAGEMENT of educational institutions. On the basis of Russian and foreign experience describes the main tasks and functions of human resource management of the University. Identified key groups of factors that determine the peculiarities of of human resource management in higher education institution, depending on its strategy, life cycle development, size, market of educational services and priorities. Formulated some proposals for improving the effectiveness of HR and its role in solving strategic problems of increase of competitiveness of Russian education in the international arena.Статья посвящена проблеме формирования эффективной системы управления кадровым потенциалом образовательного учреждения. На основе российского и зарубежного опыта рассмотрены основные задачи и функции управления человеческими ресурсами вуза. Выявлены ключевые группы факторов, определяющие особенности кадровой работы в вузе в зависимости от его стратегии, жизненного цикла развития, размера, состояния рынка образовательных услуг и приоритетных направлений деятельности. Сформулированы отдельные предложения по повышению эффективности работы кадровой службы и ее роли в решении стратегических задач повышения конкурентоспособности российского образования на международной арене

Analysis of vibration impact on stability of dewetting thin liquid film

Dynamics of a thin dewetting liquid film on a vertically oscillating substrate is considered. We assume moderate vibration frequency and large (compared to the mean film thickness) vibration amplitude. Using the lubrication approximation and the averaging method, we formulate the coupled sets of equations governing the pulsatile and the averaged fluid flows in the film, and then derive the nonlinear amplitude equation for the averaged film thickness. We show that there exists a window in the frequency-amplitude domain where the parametric and shear-flow instabilities of the pulsatile flow do not emerge. As a consequence, in this window the averaged description is reasonable and the amplitude equation holds. The linear and nonlinear analyses of the amplitude equation and the numerical computations show that such vibration stabilizes the film against dewetting and rupture.Comment: 19 pages, 11 figure

Electron and hole injection barriers between silicon substrate and RF magnetron sputtered In2O3 : Er films

In2O3 : Er films have been synthesized on silicon substrates by RF magnetron sputter deposition. The currents through the synthesized metal/oxide/semiconductor (MOS) structures (Si/In2O3 : Er/In-contact) have been measured for n and p type conductivity silicon substrates and described within the model of majority carrier thermoemission through the barrier, with bias voltage correction to the silicon potential drop. The electron and hole injection barriers between the silicon substrate and the film have been found to be 0.14 and 0.3 eV, respectively, by measuring the temperature dependence of the forward current at a low sub-barrier bias. The resulting low hole injection barrier is accounted for by the presence of defect state density spreading from the valence band edge into the In2O3 : Er band gap to form a hole conduction channel. The presence of defect state density in the In2O3 : Er band gap is confirmed by photoluminescence data in the respective energy range 1.55–3.0 eV. The band structure of the Si/In2O3 : Er heterojunction has been analyzed. The energy gap between the In2O3 : Er conduction band electrons and the band gap conduction channel holes has been estimated to be 1.56 eV

СОДЕРЖАНИЕ ГЕПЦИДИНА У БОЛЬНЫХ ВНЕБОЛЬНИЧНОЙ ПНЕВМОНИЕЙ, ОСЛОЖНЕННОЙ АНЕМИЕЙ

The aim of this study was to analyze relationships between hepcidin concentration in blood and other nflammation mediators, blood erythropoietin and iron metabolism in patients with community-acquired pneumonia complicated by anaemia. Methods. Blood hepcidin concentration in 64 patients with community-acquired pneumonia has been measured. Results. Abrupt increase in hepcidin concentration in these patients seemed to demonstrate its relationship to inflammation through the interleukine6 production. Hepcidin was also related to increased ferritin concentration and could induce hypoferremia and inflammation-related anaemia while blood erythropoietin concentration was inversely related to hemoglobin, erythrocyte and hepcidin concentrations. Conclusion. The results allow us suggestion that synthesis of hepcidin is regulated not only by inflammation but also by anaemia and hypoxia.Было исследовано содержание гепцидина в крови пациентов с внебольничной пневмонией (n = 64). Концентрация гепцидина в крови больных резко увеличивалась, демонстрируя прямую связь с воспалением через выработку интерлейкина-6. Гепцидин увеличивал содержание ферритина, вызывая гипоферремию и анемию воспаления, при этом концентрация эритропоэтина в крови повышалась при обратной корреляции с содержанием гемоглобина, эритроцитов и гепцидина. Это объясняет регуляцию его синтеза не только воспалением, но и анемией и гипоксией