Optical Spin Orientation in Strained Superlattices

Optical orientation in the strained semiconductor superlattices is investigated theoretically. The dependence of the features in spin-polarization spectra on the structure parameters is clarified. The value of polarization in the first polarization maximum in the SL structures is shown to grow with the splitting between the hh- and lh- states of the valence band, the joint strain and confinement effects on the hh1- lh1 splitting being strongly influenced by the tunneling in the barriers. In strained structures with high barriers for the holes initial polarization can exceed 95 %. Calculated polarization spectra are close to the experimental spectra of polarized electron emission.Comment: 20 pages, 8 figure

Weak localization of holes in high-mobility heterostructures

Theory of weak localization is developed for two-dimensional holes in semiconductor heterostructures. Ballistic regime of weak localization where the backscattering occurs from few impurities is studied with account for anisotropic momentum scattering of holes. The transition from weak localization to anti-localization is demonstrated for long dephasing times. For stronger dephasing the conductivity correction is negative at all hole densities due to non-monotonous dependence of the spin relaxation time on the hole wavevector. The anomalous temperature dependent correction to the conductivity is calculated. We show that the temperature dependence of the conductivity is non-monotonous at moderate hole densities.Comment: 5 pages, 4 figure

Theory of acceptor-ground-state description and hot photoluminescence in cubic semiconductors

An approach to the theory of the acceptor ground state in cubic semiconductors is presented. The model has been developed within the framework of the four-band effective Luttinger Hamiltonian and is applicable for both Coulomb and non-Coulomb accepters. The system of integral equations for the ground-state wave functions has been derived and its solution has been numerically computed. We present the general form of the acceptor-ground-state wave function. The wave functions for a set of acceptor dopants in GaAs are calculated with an accuracy of 2%. The obtained wave functions have been used for qualitative and quantitative analysis of the hot photoluminescence (HPL) spectra and linear polarization in GaAs crystals. Analytical expressions for the line shape and anisotropy of the linear polarization degree have been derived. The dependencies of the HPL characteristics on the excitation energy as well as on the acceptor binding energy have been analyzed. The HPL theory presented allows us to describe the wide spectrum of available experimental data

I.G. Starinov and Manpower Training for “World Revolution” in 193–1935

The article analyzes the development of ideas of “world revolution” in Russia, 1917–1935 gg. as a factor determining foreign policy. One of the mechanisms for the implementation of foreign policy during this period was the III Communist international. An important aspect of the military policy of the Comintern was a secret military-political school Karol swierczewski, where he taught I. G. Starinov. Practical training of participants of the world Communist movement in the military sphere is revealed through the teaching of I. G. Starinov. His students will play an important role in military conflicts and national liberation movements of the twentieth century

Habitation layers and pedogenic processes in forest-steppe riverine valleys west of the don: the case of iIyinka

A mesolithic site with an intrusive early medieval burial at Ilyinka in the Don basin is described. On the basis of soil analysis, environment and climate are reconstructed with reference to chronology and cultural attributio

Distributed automatic control of technological processes in conditions of weightlessness

Some problems associated with the automatic control of liquid metal and plasma systems under conditions of weightlessness are examined, with particular reference to the problem of stability of liquid equilibrium configurations. The theoretical fundamentals of automatic control of processes in electrically conducting continuous media are outlined, and means of using electromagnetic fields for simulating technological processes in a space environment are discussed

Interval total colorings of graphs

A total coloring of a graph $G$ is a coloring of its vertices and edges such that no adjacent vertices, edges, and no incident vertices and edges obtain the same color. An \emph{interval total $t$-coloring} of a graph $G$ is a total coloring of $G$ with colors $1,2,\...,t$ such that at least one vertex or edge of $G$ is colored by $i$, $i=1,2,\...,t$, and the edges incident to each vertex $v$ together with $v$ are colored by $d_{G}(v)+1$ consecutive colors, where $d_{G}(v)$ is the degree of the vertex $v$ in $G$. In this paper we investigate some properties of interval total colorings. We also determine exact values of the least and the greatest possible number of colors in such colorings for some classes of graphs.Comment: 23 pages, 1 figur

Characterization of deep impurities in semiconductors by terahertz tunneling ionization

Tunneling ionization in high frequency fields as well as in static fields is suggested as a method for the characterization of deep impurities in semiconductors. It is shown that an analysis of the field and temperature dependences of the ionization probability allows to obtain defect parameters like the charge of the impurity, tunneling times, the Huang–Rhys parameter, the difference between optical and thermal binding energy, and the basic structure of the defect adiabatic potentials. Compared to static fields, high frequency electric fields in the terahertz-range offer various advantages, as they can be applied contactlessly and homogeneously even to bulk samples using the intense radiation of a high power pulsed far-infrared laser. Furthermore, impurity ionization with terahertz radiation can be detected as photoconductive signal with a very high sensitivity in a wide range of electric field strengths

Advanced Therapy Medicines Based on Oncolytic Viruses (Part II: Development and Authorisation of IMLYGIC®)

The only oncolytic virus-based product authorised in the US and EU—IMLYGIC®, a genetically modified herpes simplex virus type 1 (by BioVex Inc., a subsidiary of Amgen, Inc.)—was developed and approved for clinical use as monotherapy for recurrent unresectable melanoma. The aim of the study was to analyse materials on IMLYGIC® development and authorisation in order to be able to use the data on specific aspects of preclinical and clinical trials of oncolytic virus-based products in the development of regulatory framework for Russia and the EAEU. The publicly available preclinical and clinical trial results demonstrate a decrease in the size of both tumours being injected and remote tumours/skin lesions, which supports the local and systemic effects of IMLYGIC® due to the lysis effect of the virus on the tumour cells. The clinical trials of IMLYGIC® were the first to use the durable response rate, and not the overall survival, as the primary endpoint of the efficacy of the anticancer drug. Benefits of IMLYGIC® therapy were observed across all the secondary endpoints, except overall survival. Significant efficacy of the drug therapy was demonstrated only in patients without visceral lesions, which resulted in limitations of indications for use. There have been no serious or severe adverse effects associated with IMLYGIC®. If symptoms of viral infection develop, they can be neutralized thanks to the product’s sensitivity to acyclovir. At present, advanced therapy medicinal products derived from an oncolytic virus may be authorised in Russia for clinical use as monotherapy or combination therapy, according to the EAEU regulations