Elastic Mid-Infrared Light Scattering: a Basis for Microscopy of Large-Scale Electrically Active Defects in Semiconducting Materials

A method of the mid-IR-laser microscopy has been proposed for the investigation of the large-scale electrically and recombination active defects in semiconductors and non-destructive inspection of semiconductor materials and structures in the industries of microelectronics and photovoltaics. The basis for this development was laid with a wide cycle of the investigations on the low-angle mid-IR-light scattering in semiconductors. The essence of the technical idea was to apply the dark-field method for spatial filtering of the scattered light in the scanning mid-IR-laser microscope. This approach enabled the visualization of large-scale electrically active defects which are the regions enriched with ionized electrically active centers. The photoexcitation of excess carriers within a small volume located in the probe mid-IR-laser beam enabled the visualization of the large-scale recombination-active defects like those revealed in the optical or electron beam induced current methods. Both these methods of the scanning mid-IR-laser microscopy are now introduced in detail in the present paper as well as a summary of techniques used in the standard method of the lowangle mid-IR-light scattering itself. Besides the techniques for direct observations, methods for analyses of the defect composition associated with the mid-IR-laser microscopy are also discussed in the paper.Comment: 44 pages, 13 figures. A good oldi

Analysis of functional condition of cardiorespiratory system of qualified and entrant weight lifters

This article provides data of the analysis of functional condition of cardio respiratory system of qualified and entrant weight lifter

Adatom incorporation and step crossing at the edges of 2D nanoislands

Adatom incorporation into the ``faceted'' steps bordering the 2D nanoislands is analyzed. The step permeability and incorporation coefficients are derived for some typical growth situations. It is shown that the step consisting of equivalent straight segments can be permeable even in the case of fast egde migration if there exist factors delaying creation of new kinks. The step consisting of alternating rough and straight segments may be permeable if there is no adatom transport between neighboring segments through the corner diffusion.Comment: 3 pages, one figur

Endothelotropic activity of 4-hydroxy-3,5-di-tret-butylcinnamic acid in the conditions of experimental cerebral ischemia

The aim of the study was to evaluate the endothelioprotective activity of 4-hydroxy-3,5-di-tret-butylcinnamic acid in conditions of experimental cerebral ischemia. The brain ischemia was reproduced by the method of irreversible right-sided thermocoagulation of the middle cerebral artery. As comparative drugs, mexidol (30 mg/kg) and sulodexide (30 U/kg) were use

Assessment of the impact of the educational process on motor activity and health level of cadets of educational institutions of the ministry of internal affairs of Russia

The important components of the physical training of internal affairs officers, as well as other specialists, are the level of physical activity and quality health indicators. These components will determine the physical fitness of law enforcement specialists, not to mention the effectiveness of their duties. Graduates of general educational institution entering the educational organizations of the Ministry of Internal Affairs of Russia make the first step towards the development of the identity of a law enforcement officer. Therefore, the level of future professional knowledge, skills, and abilities, as well as competencies during their study at a higher education institution will determine the ability of a police officer to cope with his/her official dutie

Fast and Slow Stages of Lifetime Degradation by Boron–Oxygen Centers in Crystalline Silicon

A conflict between previous and recently published data on the two-stage light-induced degradation (LID) of carrier lifetime in boron-doped oxygen-containing crystalline silicon is addressed. The previous experiments showed the activation of two boron–oxygen recombination centers with strongly differing recombination properties for the fast and slow stages of LID, whereas more recent studies found only a single center for both stages. To resolve this controversy, the historic silicon samples of these previous examinations are re-examined in this study after more than one decade. It is found that, in the historic samples, the fast stage can be either described by two different centers or a mixture of the two, depending on the duration of previous dark annealing. A possible solution is suggested based on the involvement of different activating impurities in the boron–oxygen defect. In dark-annealed samples, the defect consisting of boron, oxygen, and the activation impurity is present in two latent configurations, which reconfigure during LID at a fast and a slow stage. In the examined historic silicon samples, which did not undergo a gettering pretreatment, a significant concentration of an additional boron–oxygen defect with a different kind of activating impurity attached exists. The historic and modern results are thus reconciled