Charge transport through weakly open one dimensional quantum wires

We consider resonant transmission through a finite-length quantum wire connected to leads via finite transparency junctions. The coherent electron transport is strongly modified by the Coulomb interaction. The low-temperature current-voltage ($IV$) curves show step-like dependence on the bias voltage determined by the distance between the quantum levels inside the conductor, the pattern being dependent on the ratio between the charging energy and level spacing. If the system is tuned close to the resonance condition by the gate voltage, the low-voltage $IV$ curve is Ohmic. At large Coulomb energy and low temperatures, the conductance is temperature-independent for any relationship between temperature, level spacing, and coupling between the wire and the leads

Intraband electron focusing in bilayer graphene

We propose an implementation of a valley selective electronic Veselago lens in bilayer graphene. We demonstrate that in the presence of an appropriately oriented potential step, low-energy electrons radiating from a point source can be re-focused coherently within the same band. The phenomenon is due to the trigonal warping of the band structure that leads to a negative refraction index. We show that the interference pattern can be controlled by an external mechanical strain.Comment: 14 pages, 8 figure

Current and noise expressions for radio-frequency single-electron transistors

We derive self-consistent expressions of current and noise for single-electron transistors driven by time-dependent perturbations. We take into account effects of the electrical environment, higher-order co-tunneling, and time-dependent perturbations under the two-charged state approximation using the Schwinger-Kedysh approach combined with the generating functional technique. For a given generating functional, we derive exact expressions for tunneling currents and noises and present the forms in terms of transport coefficients. It is also shown that in the adiabatic limit our results encompass previous formulas. In order to reveal effects missing in static cases, we apply the derived results to simulate realized radio-frequency single-electron transistor. It is found that photon-assisted tunneling affects largely the performance of the single-electron transistor by enhancing both responses to gate charges and current noises. On various tunneling resistances and frequencies of microwaves, the dependence of the charge sensitivity is also discussed.Comment: 18 pages, 9 figure

Analysis of the temperature-dependent quantum point contact conductance in view of the metal-insulator transition in two dimensions

The temperature dependence of the conductance of a quantum point contact has been measured. The conductance as a function of the Fermi energy shows temperature-independent fixed points, located at roughly multiple integers of $e^{2}/h$. Around the first fixed point at e$^{2}$/h, the experimental data for different temperatures can been scaled onto a single curve. For pure thermal smearing of the conductance steps, a scaling parameter of one is expected. The measured scaling parameter, however, is significantly larger than 1. The deviations are interpreted as a signature of the potential landscape of the quantum point contact, and of the source-drain bias voltage. We relate our results phenomenologically to the metal-insulator transition in two dimensions.Comment: 5 pages, 3 figure

Sensitivity and back-action in charge qubit measurements by a strongly coupled single-electron transistor

We consider charge-qubit monitoring (continuous-in-time weak measurement) by a single-electron transistor (SET) operating in the sequential-tunneling regime. We show that commonly used master equations for this regime are not of the Lindblad form that is necessary and sufficient for guaranteeing valid physical states. In this paper we derive a Lindblad-form master equation and a corresponding quantum trajectory model for continuous measurement of the charge qubit by a SET. Our approach requires that the SET-qubit coupling be strong compared to the SET tunnelling rates. We present an analysis of the quality of the qubit measurement in this model (sensitivity versus back-action). Typically, the strong coupling when the SET island is occupied causes back-action on the qubit beyond the quantum back-action necessary for its sensitivity, and hence the conditioned qubit state is mixed. However, in one strongly coupled, asymmetric regime, the SET can approach the limit of an ideal detector with an almost pure conditioned state. We also quantify the quality of the SET using more traditional concepts such as the measurement time and decoherence time, which we have generalized so as to treat the strongly responding regime.Comment: About 11 pages, 6 figures. Changes in v2: we made general improvements to the manuscript including, but not limited to(!), the removal of one reference, and modification of the footnote

Low-field quantum Hall transport in an electron Fabry-Perot interferometer: Determination of constriction filling vs front-gate voltage

We report systematic quantum Hall transport experiments on Fabry-Perot electron interferometers at ultra-low-temperatures. The GaAs/AlGaAs heterostructure devices consist of two constrictions defined by etch trenches in 2D electron layer, enclosing an approximately circular island. Front gates deposited in etch trenches allow to fine-tune the device for symmetry and to change the constriction filling, relative to the bulk. The low-field longitudinal and Hall magnetotransport shows Shubnikov-de Haas oscillations and integer quantum Hall plateaus. A systematic variation of front-gate voltage affects the constriction and the island electron density, while the bulk density remains unaffected. This results in quantized plateaus in longitudinal resistance, while the Hall resistance is dominated by the low-density, low-filling constriction. At lower fields, when the quantum Hall plateaus fail to develop, we observe bulk Shubnikov-de Haas oscillations in series corresponding to an integer filling of the magnetoelectric subbands in the constrictions. This indicates that the whole interferometer region is still quantum-coherent at these lower fields at 10 mK. Analyzing the data within a Fock-Darwin model, we obtain the constriction electron density as a function of the front gate bias and, extrapolating to the zero field, the number of electric subbands (conductance channels) resulting from the electron confinement in the constrictions.Comment: 8 Figs, 13 page

Time Dependent Current Oscillations Through a Quantum Dot

Time dependent phenomena associated to charge transport along a quantum dot in the charge quantization regime is studied. Superimposed to the Coulomb blockade behaviour the current has novel non-linear properties. Together with static multistabilities in the negative resistance region of the I-V characteristic curve, strong correlations at the dot give rise to self-sustained current and charge oscillations. Their properties depend upon the parameters of the quantum dot and the external applied voltages.Comment: 4 pages, 3 figures; to appear in PR

Multiple Projection Optical Diffusion Tomography with Plane Wave Illumination

We describe a new data collection scheme for optical diffusion tomography in which plane wave illumination is combined with multiple projections in the slab imaging geometry. Multiple projection measurements are performed by rotating the slab around the sample. The advantage of the proposed method is that the measured data can be much more easily fitted into the dynamic range of most commonly used detectors. At the same time, multiple projections improve image quality by mutually interchanging the depth and transverse directions, and the scanned (detection) and integrated (illumination) surfaces. Inversion methods are derived for image reconstructions with extremely large data sets. Numerical simulations are performed for fixed and rotated slabs

Ballistic Composite Fermions in Semiconductor Nanostructures

We report the results of two fundamental transport measurements at a Landau level filling factor $\nu$ of 1/2. The well known ballistic electron transport phenomena of quenching of the Hall effect in a mesoscopic cross-junction and negative magnetoresistance of a constriction are observed close to B~=~0 and $\nu~=~ 1/2$. The experimental results demonstrate semi-classical charge transport by composite fermions, which consist of electrons bound to an even number of flux quanta.Comment: 9 pages TeX 3.1415 C version 6.1, 3 PostScript figure

Localization fom conductance in few-channel disordered wires

We study localization in two- and three channel quasi-1D systems using multichain tight-binding Anderson models with nearest-neighbour interchain hopping. In the three chain case we discuss both the case of free- and that of periodic boundary conditions between the chains. The finite disordered wires are connected to ideal leads and the localization length is defined from the Landauer conductance in terms of the transmission coefficients matrix. The transmission- and reflection amplitudes in properly defined quantum channels are obtained from S-matrices constructed from transfer matrices in Bloch wave bases for the various quasi-1D systems. Our exact analytic expressions for localization lengths for weak disorder reduce to the Thouless expression for 1D systems in the limit of vanishing interchain hopping. For weak interchain hopping the localization length decreases with respect to the 1D value in all three cases. In the three-channel cases it increases with interchain hopping over restricted domains of large hopping