Low pressure chemical vapor deposition of silicon oxynitride films using tetraethylorthosilicate, dichlorosilane and ammonia mixtures

This work describes the thermodynamic simulation and the experimental investigation of the chemical vapor deposition of silicon oxide and silicon oxynitride films starting from tetra-ethyl-orthosilicate (TEOS), dichlorosilane (DCS) and ammonia mixtures. The simulation reveals that the co-deposition of silicon oxynitride - silicon dioxide films is possible at 710° C and 300 mTorr if the DCS/TEOS ratio is greater than one. If the DCS/TEOS ratio is less than one, the deposited films are exclusively composed of silicon dioxide. These predictions were confirmed in corresponding experiments by using Fourier Transform Infrared spectroscopy (FTIR), X-ray Photoelectron Spectroscopy (XPS), Auger Electron Spectroscopy (AES) and Electron Energy Loss Spectroscopy (EELS) for the characterization of the obtained films

Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis

International audienceFormation of a thin band of silicon nanoparticles within silicon nitride films by low-energy (1 keV) silicon ion implantation and subsequent thermal annealing is demonstrated. Electrical characterization of metal–insulator–semiconductor capacitors reveals that oxide/Si-nanoparticles-nitride/oxide dielectric stacks exhibit enhanced charge transfer characteristics between the substrate and the silicon nitride layer compared to dielectric stacks using unimplanted silicon nitride. Attractive results are obtained in terms of write/erase memory characteristics and data retention, indicating the large potential of the low-energy ion-beam-synthesis technique in SONOS memory technology

Identification and validation of biomarkers for Autism Spectrum Disorders: towards a shared understanding between academia, industry and regulatory authorities

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