Roadmap to Gigahertz Organic Transistors

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Easy to adapt electron beam proximity effect correction parameter calibration based on visual inspection of a “Best Dose Sensor”

The quality of e-beam proximity effect correction depends on the quality of the proximity effect model parameters, which are not accessible to direct measurement. Monte Carlo simulation is capable of determining the electron scattering coefficients, but does not include the process induced effects such as resist blur. Therefore, various experimental methods have been suggested (Stevensat et al. (1986) [1]; Rishton and Kern (1987) [2]; Hudek (2006) [3]). Most are either highly labor intensive due to a large required number of critical dimension measurements, or simple in the experimental evaluation, but limited in accuracy (Babin and Svintsov (1992) [4]), since resist effects interfere with the evaluation criterion.This paper presents an easy to adapt experimental calibration method based on visual inspection of a “Best Dose Sensor”, and its application to calibrate long- and mid-range effect

Roadmap to Gigahertz Organic Transistors

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