Quantum Noise and Polarization Fluctuations in Vertical Cavity Surface Emitting Lasers

We investigate the polarization fluctuations caused by quantum noise in quantum well vertical cavity surface emitting lasers (VCSELs). Langevin equations are derived on the basis of a generalized rate equation model in which the influence of competing gain-loss and frequency anisotropies is included. This reveals how the anisotropies and the quantum well confinement effects shape the correlations and the magnitude of fluctuations in ellipticity and in polarization direction. According to our results all parameters used in the rate equations may be obtained experimentally from precise time resolved measurements of the intensity and polarization fluctuations in the emitted laser light. To clarify the effects of anisotropies and of quantum well confinement on the laser process in VCSELs we therefore propose time resolved measurements of the polarization fluctuations in the laser light. In particular, such measurements allow to distinguish the effects of frequency anisotropy and of gain-loss anisotropy and would provide data on the spin relaxation rate in the quantum well structure during cw operation as well as representing a new way of experimentally determinig the linewidth enhancement factor alpha.Comment: 16 pages and 3 Figures, RevTex, to be published in Phys. Rev.

Solution of the X-ray edge problem for 2D electrons in a magnetic field

The absorption and emission spectra of transitions between a localized level and a two-dimensional electron gas, subjected to a weak magnetic field, are calculated analytically. Adopting the Landau level bosonization technique developed in previous papers, we find an exact expression for the relative intensities of spectral lines. Their envelope function, governed by the interaction between the electron gas and the core hole, is reminescent of the famous Fermi edge singularity, which is recovered in the limit of a vanishing magnetic field.Comment: 4 pages, 1 figur

Optoelectric spin injection in semiconductor heterostructures without ferromagnet

We have shown that electron spin density can be generated by a dc current flowing across a $pn$ junction with an embedded asymmetric quantum well. Spin polarization is created in the quantum well by radiative electron-hole recombination when the conduction electron momentum distribution is shifted with respect to the momentum distribution of holes in the spin split valence subbands. Spin current appears when the spin polarization is injected from the quantum well into the $n$-doped region of the $pn$ junction. The accompanied emission of circularly polarized light from the quantum well can serve as a spin polarization detector.Comment: 2 figure

Voltage control of nuclear spin in ferromagnetic Schottky diodes

We employ optical pump-probe spectroscopy to investigate the voltage dependence of spontaneous electron and nuclear spin polarizations in hybrid MnAs/n-GaAs and Fe/n-GaAs Schottky diodes. Through the hyperfine interaction, nuclear spin polarization that is imprinted by the ferromagnet acts on conduction electron spins as an effective magnetic field. We demonstrate tuning of this nuclear field from <0.05 to 2.4 kG by varying a small bias voltage across the MnAs device. In addition, a connection is observed between the diode turn-on and the onset of imprinted nuclear polarization, while traditional dynamic nuclear polarization exhibits relatively little voltage dependence.Comment: Submitted to Physical Review B Rapid Communications. 15 pages, 3 figure

Multi-layer scintillation detector for the MOON double beta decay experiment: Scintillation photon responses studied by a prototype detector MOON-1

An ensemble of multi-layer scintillators is discussed as an option of the high-sensitivity detector Mo Observatory Of Neutrinos (MOON) for spectroscopic measurements of neutrino-less double beta decays. A prototype detector MOON-1, which consists of 6 layer plastic-scintillator plates, was built to study the sensitivity of the MOON-type detector. The scintillation photon collection and the energy resolution, which are key elements for the high-sensitivity experiments, are found to be 1835+/-30 photo-electrons for 976 keV electrons and sigma = 2.9+/-0.1% (dE/E = 6.8+/-0.3 % in FWHM) at the Qbb ~ 3 MeV region, respectively. The multi-layer plastic-scintillator structure with good energy resolution as well as good background suppression of beta-gamma rays is crucial for the MOON-type detector to achieve the inverted hierarchy neutrino mass sensitivity.Comment: 8 pages, 16 figures, submitted to Nucl.Instrum.Met

Fermi-edge singularities in linear and non-linear ultrafast spectroscopy

We discuss Fermi-edge singularity effects on the linear and nonlinear transient response of an electron gas in a doped semiconductor. We use a bosonization scheme to describe the low energy excitations, which allows to compute the time and temperature dependence of the response functions. Coherent control of the energy absorption at resonance is analyzed in the linear regime. It is shown that a phase-shift appears in the coherent control oscillations, which is not present in the excitonic case. The nonlinear response is calculated analytically and used to predict that four wave-mixing experiments would present a Fermi-edge singularity when the exciting energy is varied. A new dephasing mechanism is predicted in doped samples that depends linearly on temperature and is produced by the low-energy bosonic excitations in the conduction band.Comment: long version; 9 pages, 4 figure

Spin effects in a confined 2DEG: Enhancement of the g-factor, spin-inversion states and their far-infrared absorption

We investigate several spin-related phenomena in a confined two-dimensional electron gas (2DEG) using the Hartree-Fock approximation for the mutual Coulomb interaction of the electrons. The exchange term of the interaction causes a large splitting of the spin levels whenever the chemical potential lies within a Landau band (LB). This splitting can be reinterpreted as an enhancement of an effective g-factor, g*. The increase of g* when a LB is half filled can be accompanied by a spontaneous formation of a static spin-inversion state (SIS) whose details depend on the system sision state (SIS) whose details depend on the system size. The coupling of the states of higher LB's into the lowest band by the Coulomb interaction of the 2DEG is essential for the SIS to occur. The far-infrared absorption of the system, relatively insensitive to the spin splitting, develops clear signs of the SIS.Comment: 7 figure

Coulomb effects on the quantum transport of a two-dimensional electron system in periodic electric and magnetic fields

The magnetoresistivity tensor of an interacting two-dimensional electron system with a lateral and unidirectional electric or magnetic modulation, in a perpendicular quantizing magnetic field, is calculated within the Kubo formalism. The influence of the spin splitting of the Landau bands and of the density of states (DOS) on the internal structure of the Shubnikov-de Haas oscillations is analyzed. The Coulomb electron - electron interaction is responsible for strong screening and exchange effects and is taken into account in a screened Hartree-Fock approximation, in which the exchange contribution is calculated self-consistently with the DOS at the Fermi level. This approximation describes both the exchange enhancement of the spin splitting and the formation of compressible edge strips, unlike the simpler Hartree and Hartree-Fock approximations, which yield either the one or the other.Comment: 20 pages, revtex, 7 ps figures, to appear in Phys. Rev.

Exciton Spin Dynamics in Semiconductor Quantum Wells

In this paper we will review Exciton Spin Dynamics in Semiconductor Quantum Wells. The spin properties of excitons in nanostructures are determined by their fine structure. We will mainly focus in this review on GaAs and InGaAs quantum wells which are model systems.Comment: 55 pages, 27 figure

Spintronics: Fundamentals and applications

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.Comment: invited review, 36 figures, 900+ references; minor stylistic changes from the published versio