61 research outputs found
Aluminium incorporation in AlGaN/GaN heterostructures: a comparative study by ion beam analysis and X-ray diffraction
The Al content in AlxGa1 − xN/GaN heterostructures has been determined by X-ray diffraction (XRD) and contrasted with absolute measurements from ion beam analysis (IBA) methods. For this purpose, samples with 0.1bxb0.3 grown by metal organic chemical vapour deposition on sapphire substrates have been studied. XRD and IBA corroborate the good epitaxial growth of the AlGaN layer, which slightly deteriorates with the incorporation of Al for xN0.2. The assessment of Al incorporation by XRD is quite reliable regarding the average value along the sample thickness. However, XRD analysis tends to overestimate the Al fraction at low contents, which is attributed to the presence of strain within the layer. For the highest Al incorporation, IBA detects a certain Al in-depth compositional profile that should be considered for better XRD data analysis
Simultaneous analysis of low-Z impurities in the near-surface region of solid materials by heavy ion elastic recoil detection (HIERD)
Influence of surface roughness on measuring depth profiles and the total amount of implanted ions by RBS and ERDA
Simultaneous Analysis of Low-Z Impurities in the Near-Surface Region of Solid Materials by Heavy Ion Elastic Recoil Detection (HIERD)
2153 Positron emission tomography (PET) examination malignant uveal melanomas: First results
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