51 research outputs found

    Testing quantum foundations with quantum computers

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    We present two complementary viewpoints for combining quantum computers and the foundations of quantum mechanics. On the one hand, ideal devices can be used as test beds for experimental tests of the foundations of quantum mechanics: We provide algorithms for the Peres test for complex numbers in quantum superpositions and the Sorkin test of Born's rule. On the other hand, noisy intermediate-scale quantum devices can be benchmarked using these same tests. These are deep quantum benchmarks based on the foundations of quantum theory itself. We present test data from Rigetti hardware

    Nanocrystal-based Ohmic contacts on n and p-type germanium

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    We report a simple method of forming Ohmic contacts to n and p-type germanium (Ge) simultaneously using Au nanocrystals embedded in Ti contact metal. The electric field due to the work-function difference of Ti and Au reduces the tunneling resistance at the Ti-Au/Ge interface for n and p-type contacts. The nanocrystal-based contacts on n-Ge exhibit quasi-Ohmic current-voltage characteristics with >1000x increase in current density and an apparent reduction of 0.18 eV in the barrier height over Ti/n-Ge and Au/n-Ge contacts that show rectifying characteristics due to Fermi level pinning. On n(+)Ge, the nanocrystal-based contacts exhibit Ohmic characteristics with >35x reduction in zero-bias resistance over Ti/n(+)Ge contacts. Similar to Ti and Au contacts on p-Ge, Au nanocrystals embedded in Ti continue to exhibit Ohmic characteristics. This is in contrast to methods that convert p-type contacts from Ohmic to rectifying in the process of forming an Ohmic contact on n-Ge by inserting a thin dielectric layer between the metal and Ge. Device simulations reinforce the observed decrease in tunneling resistance due to the enhanced electric field at the Ti-Au/Ge interface. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3700965

    A Highly Reliable and Unbiased PUF Based on Differential OTP Memory

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    Physically unclonable functions (PUF) are essential for hardware identity and security for IoT devices. The PUF consists of amulti-bit string that requires unbiased randomness. A one-time programmable memory (OTPM) uses insulator breakdown inmetal-insulator-metaldevice to switch between insulating ("0") and conducting ("1") state. An OTPM based PUF produces an unbiased bit-string if exactly median breakdown voltage (V-BD) and time are used. The exact application of median V-BD is challenging in an integrated circuit as a conventional voltage supply tolerance specification is 10%. In this letter, we propose a differential OTPM-based PUF with a parallel circuit of two OTPM in series with a resistance. A high voltage stochastically produces a breakdown in one of the two OTPM first, which then reduces the voltage drop across the parallel OTPM circuit to prevent further breakdown events. The experimental results of differential OTPM PUF binary string generation show essentially unbiased randomness to demonstrate excellent resistance to supply voltage variation. Ideal uniqueness and reproducibility are observed. Thus, our approach enables PUF implementation with standard voltage supply tolerance and negligible post-processing
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