Hopping conductivity in the quantum Hall effect -- revival of universal scaling

We have measured the temperature dependence of the conductivity $\sigma_{xx}$ of a two-dimensional electron system deep into the localized regime of the quantum Hall plateau transition. Using variable-range hopping theory we are able to extract directly the localization length $\xi$ from this experiment. We use our results to study the scaling behavior of $\xi$ as a function of the filling factor distance $|\delta \nu|$ to the critical point of the transition. We find for all samples a power-law behavior $\xi\propto|\delta\nu|^{-\gamma}$ with a universal scaling exponent $\gamma = 2.3$ as proposed theoretically

Conductance fluctuations at the quantum Hall plateau transition

We analyze the conductance fluctuations observed in the quantum Hall regime for a bulk two-dimensional electron system in a Corbino geometry. We find that characteristics like the power spectral density and the temperature dependence agree well with simple expectations for universal conductance fluctuations in metals, while the observed amplitude is reduced. In addition, the dephasing length $L_\Phi \propto T^{-1/2}$, which governs the temperature dependence of the fluctuations, is surprisingly different from the scaling length $L_{sc}\propto T^{-1}$ governing the width of the quantum Hall plateau transition

High Frequency Conductivity in the Quantum Hall Regime

We have measured the complex conductivity $\sigma_{xx}$ of a two-dimensional electron system in the quantum Hall regime up to frequencies of 6 GHz at electron temperatures below 100 mK. Using both its imaginary and real part we show that $\sigma_{xx}$ can be scaled to a single function for different frequencies and for all investigated transitions between plateaus in the quantum Hall effect. Additionally, the conductivity in the variable-range hopping regime is used for a direct evaluation of the localization length $\xi$. Even for large filing factor distances $\delta \nu$ from the critical point we find $\xi \propto \delta \nu^{-\gamma}$ with a scaling exponent $\gamma=2.3$

Real-time path integral approach to nonequilibrium many-body quantum system

A real-time path integral Monte Carlo approach is developed to study the dynamics in a many-body quantum system until reaching a nonequilibrium stationary state. The approach is based on augmenting an exact reduced equation for the evolution of the system in the interaction picture which is amenable to an efficient path integral (worldline) Monte Carlo approach. Results obtained for a model of inelastic tunneling spectroscopy reveal the applicability of the approach to a wide range of physically important regimes, including high (classical) and low (quantum) temperatures, and weak (perturbative) and strong electron-phonon couplings.Comment: 5 pages, 2 figure

Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters

We investigated the size dependence of the ground state energy in self-assembled InAs quantum dots embedded in resonant tunneling diodes. Individual current steps observed in the current-voltage characteristics are attributed to resonant single-electron tunneling via the ground state of individual InAs quantum dots. The onset voltage of the first step observed is shown to decrease systematically from 200 mV to 0 with increasing InAs coverage. We relate this to a coverage-dependent size of InAs dots grown on AlAs. The results are confirmed by atomic force micrographs and photoluminescence experiments on reference samples.Comment: 3 pages, 3 figure

Spin Blockade in Capacitively Coupled Quantum Dots

We present transport measurements on a lateral double dot produced by combining local anodic oxidation and electron beam lithography. We investigate the tunability of our device and demonstrate, that we can switch between capacitive and tunnel coupling. In the regime of capacitive coupling we observe the phenomenon of spin blockade in a magnetic field and analyze the influence of capacitive interdot coupling on this effect.Comment: 4 pages, 3 figure

Giant anisotropy of Zeeman splitting of quantum confined acceptors in Si/Ge

Shallow acceptor levels in Si/Ge/Si quantum well heterostructures are characterized by resonant tunneling spectroscopy in the presence of high magnetic fields. In a perpendicular magnetic field we observe a linear Zeeman splitting of the acceptor levels. In an in-plane field, on the other hand, the Zeeman splitting is strongly suppressed. This anisotropic Zeeman splitting is shown to be a consequence of the huge light hole-heavy hole splitting caused by a large biaxial strain and a strong quantum confinement in the Ge quantum well.Comment: 5 figures, 4 page