On the regularization of solution of an inverse ultraparabolic equation associated with perturbed final data

In this paper, we study the inverse problem for a class of abstract ultraparabolic equations which is well-known to be ill-posed. We employ some elementary results of semi-group theory to present the formula of solution, then show the instability cause. Since the solution exhibits unstable dependence on the given data functions, we propose a new regularization method to stabilize the solution. then obtain the error estimate. A numerical example shows that the method is efficient and feasible. This work slightly extends to the earlier results in Zouyed et al. \cite{key-9} (2014).Comment: 19 pages, 4 figures, 1 tabl

Efficient in vitro plantlets regeneration from leaf explant of Haworthia retusa, an important ornamental succulent

This study was conducted to establish an efficient in vitro plantlet regeneration protocol using the ex vitro leaves as explants for Haworthia retusa. Leaf tissues were cultured on liquid full-strength Murashige and Skoog (MS) medium supplemented with 2.0 mg/L indole 3-butyric acids (IBA) for callus induction, followed by sub-cultured to solid medium for callus proliferation. Callus was then transferred to a fresh medium supplemented with 6-benzyl amino adenine (BA) for shoot development. The result showed that the maximum rate of shoot regeneration (100%), number of shoots per explant (43), and shoot height (9.4 mm) were recorded on the solid MS medium supplemented with 1.0 mg/L BA and 30 g/L sucrose. IBA improved rooting, whereas, NAA (naphthaleneacetic acid) causes calli to form at the base of the shoots. The half-strength MS medium supplemented with 0.5 mg/L IBA provided the best rooting response for the shoot. This medium formulation resulted in the highest rooting rate (100%) and the highest mean root number (5 roots/explant). The result of the present study would be helpful for the mass propagation of commercially important H. retusa

Simulation of the Heavy Charged Particle Impacts on Electrical Characteristics of N-MOSFET Device Structure

The paper presents the results of simulation of the impacts of a heavy charged particle with a value of linear energy transfer equal to 1.81 MeV•cm2 /mg, 10.1 MeV•cm2 /mg, 18.8 MeV•cm2 /mg, 55.0 MeV•cm2 /mg, corresponding to nitrogen ions 15N+4 with energy E = 1.87 MeV, argon 40Ar+12 with energy E = 372 MeV, ferrum 56Fe+15 with energy E = 523 MeV, xenon 131Xe+35 with energy E = 1217 MeV, on electrical characteristics of n-MOSFET device structure when there are variations in the motion trajectory and ambient temperature