3,455 research outputs found
Doping n-type carriers by La-substitution for Ba in YBa_2Cu_3O_y system
Thus far, there is no cuprate system where both n-type and p-type charge
carriers can be doped without changing the crystallographic structure. For
studying the electron-hole symmetry in an identical structure, we try to dope
n-type carriers to YBa2Cu3Oy system by reducing oxygen content and substituting
La3+ ions for Ba2+. Single crystals of La-doped YBa2Cu3Oy are grown by a flux
method with Y2O3 crucibles and it is confirmed that La actually substitutes
\~13% of Ba. The oxygen content y can be varied between 6.21 and 6.95 by
annealing the crystals in an atmosphere with controlled oxygen partial
pressure. The in-plane resistivity rho_ab at room temperature was found to
increase with decreasing oxygen content y down to 6.32, but interestingly
further decrease in y results in a decrease in rho_ab. The most reduced samples
with y = 6.21 show rho_ab of ~30 mOhm cm at room temperature, which is as much
as seven orders-of-magnitude smaller than the maximum value at y = 6.32.
Furthermore, both the Hall coefficient and the Seebeck coefficient of the y =
6.21 samples are found to be negative at room temperatures. The present results
demonstrate that the non-doped Mott-insulating state has been crossed upon
reducing y and n-type carriers are successfully doped in this material.Comment: 4 pages, 4 figures, 1 table, accepted for publication in Phys. Rev.
Superconductivity in undoped T' cuprates with Tc over 30 K
Undoped cuprates have long been considered to be antiferromagnetic
insulators. In this article, however, we report that superconductivity is
achieved in undoped T'-RE2CuO4 (RE = Pr, Nd, Sm, Eu, and Gd). Our discovery was
performed by using metal-organic decomposition (MOD), an inexpensive and
easy-to-implement thin-film process. The keys to prepare the superconducting
films are firing with low partial-pressure of oxygen and reduction at low
temperatures. The highest Tc of undoped T'-RE2CuO4 is over 30 K, substantially
higher than "electron-doped" analogs. Remarkably, Gd2CuO4, even the derivatives
of which have not shown superconductivity so far, gets superconducting with
Tconset as high as ~ 20 K. The implication of our discovery is briefly
discussed.Comment: 22 pages, 5 figures, submitted to Physical Review Letter
Origin of superconducting carriers in "non-doped" T'- (La,RE)2CuO4 (RE = Sm, Eu, Gd, Tb, Lu, and Y) prepared by molecular beam epitaxy
We have performed a systematic investigation of the variations of the lattice
constants with substituent rare-earth element concentration x in the nominally
undoped superconductors T'-(La3+)2-x(RE3+)xCuO4 (RE = Sm, Eu, Gd, Tb, Lu, and
Y), which we have recently discovered using MBE. The results show both the
in-plane and out-of-plane lattice constants (a0 and c0) linearly decrease with
x, whose extrapolation to x = 2 agrees well with the reported a0 and c0 values
for each T'-RE2CuO4. This behavior is what one would expect simply from the
ionic size difference between La3+ and RE3+. The absence of the Cu-O bond
stretching due to electron-doping, which is commonly observed in electron-doped
T' and infinite-layer superconductors, implies that electron doping via oxygen
deficiencies is, at least, not a main source of charge carriers.Comment: proceedings of ISS 200
Structure of the exotic spin-flop states in BaCu2Si2O7
The unusual 2-stage spin flop transition in BaCu2Si2O7 is studied by
single-crystal neutron diffraction. The magnetic structures of the various
spin-flop phases are determined. The results appear to be inconsistent with the
previously proposed theoretical explanation of the 2-stage transition.Comment: 6 pages 5 figure
Generic phase diagram of "electron-doped" T' cuprates
We investigated the generic phase diagram of the electron doped
superconductor, Nd2-xCexCuO4, using films prepared by metal organic
decomposition. After careful oxygen reduction treatment to remove interstitial
Oap atoms, we found that the Tc increases monotonically from 24 K to 29 K with
decreasing x from 0.15 to 0.00, demonstrating a quite different phase diagram
from the previous bulk one. The implication of our results is discussed on the
basis of tremendous influence of Oap "impurities" on superconductivity and also
magnetism in T' cuprates. Then we conclude that our result represents the
generic phase diagram for oxygen-stoichiometric Nd2-xCexCuO4.Comment: 12 pages, 4 figures; International Symposium on Superconductivity
(ISS) 200
Magnetic anisotropy of BaCu2Si2O7: theory and antiferromagnetic resonance
Antiferromagnetic resonance (AFMR) of BaCu2Si2O7 and a microscopic theory of
the magnetic anisotropy of spin 1/2 chain compounds with folded CuO3 geometry
being in good agreement with the available data are presented. The AFMR studies
at 4.2 K show the existence of two gaps (40 and 76 GHz) at zero magnetic field
and of two spin re-orientation transitions for H||c. The microscopic origin of
the two gaps is shown to be Hund's rule coupling which leads to a "residual
anisotropy" beyond the compensation of the Dzyaloshinskii-Moriya term by the
symmetric anisotropy which would be valid without Hund's coupling.Comment: 4 pages, 3 figure
Spin-charge mixing effects on resonant tunneling in a polarized Luttinger Liquid
We investigate spin-charge mixing effect on resonant tunneling in
spin-polarized Tomonaga-Luttinger liquid with double impurities. The mixing
arises from Fermi velocity difference between two spin species due to Zeeman
effect. Zero bias conductance is calculated as a function of gate voltage
, gate magnetic field , temperature and magnetic field
applied to the system. Mixing effect is shown to cause rotation of the lattice
pattern of the conductance peaks in plane, which can be
observed in experiments. At low temperatures, the contour shapes are classified
into three types, reflecting the fact that effective barrier potential is
renormalized towards ``perfect reflection'', ``perfect transmission'' and
magnetic field induced ``spin-filtering'', respectively.Comment: 10 pages, 4 figures, Sec.I and references largely changed, results
for a strong barrier limit added in a new section Sec.I
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