Juncture stress fields in multicellular shell structures. Volume IV - Stresses and deformations of fixed-edge segmental spherical shells Final report

Equations for thin elastic spherical shells and digital program for analysis of stresses and deformation of fixed edge segmental spherical shells - solution by finite difference techniqu

Magnetically-induced reconstructions of the ground state in a few-electron Si quantum dot

We report unexpected fluctuations in the positions of Coulomb blockade peaks at high magnetic fields in a small Si quantum dot. The fluctuations have a distinctive saw-tooth pattern: as a function of magnetic field, linear shifts of peak positions are compensated by abrupt jumps in the opposite direction. The linear shifts have large slopes, suggesting formation of the ground state with a non-zero angular momentum. The value of the momentum is found to be well defined, despite the absence of the rotational symmetry in the dot.Comment: 5 pages, 4 figures, accepted to PR

Double-dot charge transport in Si single electron/hole transistors

We studied transport through ultra-small Si quantum dot transistors fabricated from silicon-on-insulator wafers. At high temperatures, 4K<T<100K, the devices show single-electron or single-hole transport through the lithographically defined dot. At T<4K, current through the devices is characterized by multidot transport. From the analysis of the transport in samples with double-dot characteristics, we conclude that extra dots are formed inside the thermally grown gate oxide which surrounds the lithographically defined dot.Comment: 4 pages, 5 figures, to appear in Appl. Phys. Let

Pinning modes and interlayer correlation in high magnetic field bilayer Wigner solids

We report studies of pinning mode resonances in the low total Landau filling (\nu) Wigner solid of a series of bilayer hole samples with negligible interlayer tunneling, and with varying interlayer separation d. Comparison of states with equal layer densities (p,p) to single layer states (p,0) produced {in situ} by biasing, indicates that there is interlayer quantum correlation in the solid at small d. Also, the resonance frequency at small d is decreased just near \nu=1/2 and 2/3, indicating the importance in the solid of correlations related to those in the fractional quantum Hall effects

Quantum oscillations observed in graphene at microwave frequencies

We have measured the microwave conductance of mechanically exfoliated graphene at frequencies up to 8.5 GHz. The conductance at 4.2 K exhibits quantum oscillations, and is independent of the frequency