The Ecm11-Gmc2 complex promotes synaptonemal complex formation through assembly of transverse filaments in budding yeast

During meiosis, homologous chromosomes pair at close proximity to form the synaptonemal complex (SC). This association is mediated by transverse filament proteins that hold the axes of homologous chromosomes together along their entire length. Transverse filament proteins are highly aggregative and can form an aberrant aggregate called the polycomplex that is unassociated with chromosomes. Here, we show that the Ecm11-Gmc2 complex is a novel SC component, functioning to facilitate assembly of the yeast transverse filament protein, Zip1. Ecm11 and Gmc2 initially localize to the synapsis initiation sites, then throughout the synapsed regions of paired homologous chromosomes. The absence of either Ecm11 or Gmc2 substantially compromises the chromosomal assembly of Zip1 as well as polycomplex formation, indicating that the complex is required for extensive Zip1 polymerization. We also show that Ecm11 is SUMOylated in a Gmc2-dependent manner. Remarkably, in the unSUMOylatable ecm11 mutant, assembly of chromosomal Zip1 remained compromised while polycomplex formation became frequent. We propose that the Ecm11-Gmc2 complex facilitates the assembly of Zip1 and that SUMOylation of Ecm11 is critical for ensuring chromosomal assembly of Zip1, thus suppressing polycomplex formation

Electromechanical coupling in free-standing AlGaN/GaN planar structures

The strain and electric fields present in free-standing AlGaN/GaN slabs are examined theoretically within the framework of fully-coupled continuum elastic and dielectric models. Simultaneous solutions for the electric field and strain components are obtained by minimizing the electric enthalpy. We apply constraints appropriate to pseudomorphic semiconductor epitaxial layers and obtain closed-form analytic expressions that take into account the wurtzite crystal anisotropy. It is shown that in the absence of free charges, the calculated strain and electric fields are substantially differently from those obtained using the standard model without electromechanical coupling. It is also shown, however, that when a two-dimensional electron gas is present at the AlGaN/GaN interface, a condition that is the basis for heterojunction field-effect transistors, the electromechanical coupling is screened and the decoupled model is once again a good approximation. Specific cases of these calculations corresponding to transistor and superlattice structures are discussed.Comment: revte

The effect of electromechanical coupling on the strain in AlGaN/GaN heterojunction field effect transistors

The strain in AlGaN/GaN heterojunction field-effect transistors (HFETs) is examined theoretically in the context of the fully-coupled equation of state for piezoelectric materials. Using a simple analytical model, it is shown that, in the absence of a two-dimensional electron gas (2DEG), the out-of-plane strain obtained without electromechanical coupling is in error by about 30% for an Al fraction of 0.3. This result has consequences for the calculation of quantities that depend directly on the strain tensor. These quantities include the eigenstates and electrostatic potential in AlGaN/GaN heterostructures. It is shown that for an HFET, the electromechanical coupling is screened by the 2DEG. Results for the electromechanical model, including the 2DEG, indicate that the standard (decoupled) strain model is a reasonable approximation for HFET calculataions. The analytical results are supported by a self-consistent Schr\"odinger-Poisson calculation that includes the fully-coupled equation of state together with the charge-balance equation.Comment: 6 figures, revte

Forming method and characteristics of coiled spring in small coil diameter and with high rectangular ratio in winding wire cross section

This paper presents a new forming method of a coiled spring which is used as a forceps manipulator of a surgical robot. Joint parts of forceps manipulator are required to be “easy to bend and strong to twist”. This demand is fulfilled by using coiled springs with high rectangular ratio in winding wire cross section. However, the coiled springs are conventionally expensive as they are fabricated by machining. This study proposed a new and inexpensive forming method for fabrication of the coiled spring with high rectangular ratio in the wire cross section. In this method, the coiled spring with circular shape in the winding wire cross section is compressed in the coil axial direction by upsetting, and then the rectangle ratio of the wire becomes high. The coiled spring with a high rectangular ratio of 3 was obtained by the proposed method. In addition, a numerical analysis and an experiment were conducted for evaluation of the formed coiled springs in terms of tensile, torsional, and bending characteristics. The formed coiled springs were easy to bend and strong to twist from results. Moreover, the elastic limit of the formed coiled springs improved due to work hardening by upsetting

Direct and indirect control of the initiation of meiotic recombination by DNA damage checkpoint mechanisms in budding yeast

Meiotic recombination plays an essential role in the proper segregation of chromosomes at meiosis I in many sexually reproducing organisms. Meiotic recombination is initiated by the scheduled formation of genome-wide DNA double-strand breaks (DSBs). The timing of DSB formation is strictly controlled because unscheduled DSB formation is detrimental to genome integrity. Here, we investigated the role of DNA damage checkpoint mechanisms in the control of meiotic DSB formation using budding yeast. By using recombination defective mutants in which meiotic DSBs are not repaired, the effect of DNA damage checkpoint mutations on DSB formation was evaluated. The Tel1 (ATM) pathway mainly responds to unresected DSB ends, thus the sae2 mutant background in which DSB ends remain intact was employed. On the other hand, the Mec1 (ATR) pathway is primarily used when DSB ends are resected, thus the rad51 dmc1 double mutant background was employed in which highly resected DSBs accumulate. In order to separate the effect caused by unscheduled cell cycle progression, which is often associated with DNA damage checkpoint defects, we also employed the ndt80 mutation which permanently arrests the meiotic cell cycle at prophase I. In the absence of Tel1, DSB formation was reduced in larger chromosomes (IV, VII, II and XI) whereas no significant reduction was found in smaller chromosomes (III and VI). On the other hand, the absence of Rad17 (a critical component of the ATR pathway) lead to an increase in DSB formation (chromosomes VII and II were tested). We propose that, within prophase I, the Tel1 pathway facilitates DSB formation, especially in bigger chromosomes, while the Mec1 pathway negatively regulates DSB formation. We also identified prophase I exit, which is under the control of the DNA damage checkpoint machinery, to be a critical event associated with down-regulating meiotic DSB formation

Highly c-axis-oriented AlN film using MOCVD for 5GHz-band FBAR filter

科研費報告書収録論文(課題番号:14205053/研究代表者:坪内和夫/ソフトウェア無線端末用超低消費電力GHz帯RF DSPの開発

Using Extreme Value Theory for Determining the Probability of Carrington-Like Solar Flares

Space weather events can negatively affect satellites, the electricity grid, satellite navigation systems and human health. As a consequence, extreme space weather has been added to the UK and other national risk registers. By their very nature, extreme space weather events occur rarely and, therefore, statistical methods are required to determine the probability of their occurrence. Space weather events can be characterised by a number of natural phenomena such as X-ray (solar) flares, solar energetic particle (SEP) fluxes, coronal mass ejections and various geophysical indices (Dst, Kp, F10.7). In this paper extreme value theory (EVT) is used to investigate the probability of extreme solar flares. Previous work has assumed that the distribution of solar flares follows a power law. However such an approach can lead to a poor estimation of the return times of such events due to uncertainties in the tails of the probability distribution function. Using EVT and GOES X-ray flux data it is shown that the expected 150-year return level is approximately an X60 flare whilst a Carrington-like flare is a one in a 100-year event. It is also shown that the EVT results are consistent with flare data from the Kepler space telescope mission.Comment: 13 pages, 4 figures; updated content following reviewer feedbac