A very efficient RCS data compression and reconstruction technique, volume 4

A very efficient compression and reconstruction scheme for RCS measurement data was developed. The compression is done by isolating the scattering mechanisms on the target and recording their individual responses in the frequency and azimuth scans, respectively. The reconstruction, which is an inverse process of the compression, is granted by the sampling theorem. Two sets of data, the corner reflectors and the F-117 fighter model, were processed and the results were shown to be convincing. The compression ratio can be as large as several hundred, depending on the target's geometry and scattering characteristics

High Input Impedance Voltage-Mode Universal Biquadratic Filters With Three Inputs Using Three CCs and Grounding Capacitors

Two current conveyors (CCs) based high input impedance voltage-mode universal biquadratic filters each with three input terminals and one output terminal are presented. The first circuit is composed of three differential voltage current conveyors (DVCCs), two grounded capacitors and four resistors. The second circuit is composed of two DVCCs, one differential difference current conveyor (DDCC), two grounded capacitors and four grounded resistors. The proposed circuits can realize all the standard filter functions, namely, lowpass, bandpass, highpass, notch and allpass filters by the selections of different input voltage terminals. The proposed circuits offer the features of high input impedance, using only grounded capacitors and low active and passive sensitivities. Moreover, the x ports of the DVCCs (or DDCC) in the proposed circuits are connected directly to resistors. This design offers the feature of a direct incorporation of the parasitic resistance at the x terminal of the DVCC (DDCC), Rx, as a part of the main resistance

Monolithically Patterned Wide-Narrow-Wide All-Graphene Devices

We investigate theoretically the performance advantages of all-graphene nanoribbon field-effect transistors (GNRFETs) whose channel and source/drain (contact) regions are patterned monolithically from a two-dimensional single sheet of graphene. In our simulated devices, the source/drain and interconnect regions are composed of wide graphene nanoribbon (GNR) sections that are semimetallic, while the channel regions consist of narrow GNR sections that open semiconducting bandgaps. Our simulation employs a fully atomistic model of the device, contact and interfacial regions using tight-binding theory. The electronic structures are coupled with a self-consistent three-dimensional Poisson's equation to capture the nontrivial contact electrostatics, along with a quantum kinetic formulation of transport based on non-equilibrium Green's functions (NEGF). Although we only consider a specific device geometry, our results establish several general performance advantages of such monolithic devices (besides those related to fabrication and patterning), namely the improved electrostatics, suppressed short-channel effects, and Ohmic contacts at the narrow-to-wide interfaces.Comment: 9 pages, 11 figures, 2 table

ANALYSIS OF GROUND REACTION FORCE DURING FASTBALL AND CHANGE-UP SOFTBALL PITCHES

The lower extremity provides stability and balance when we exercise. The roles what lower extremity plays should be clarified during pitching. Therefore, the purpose of this study was to observe the differences of ground reaction force for fastball and change-up windmill softball pitching

Heteroepitaxy of deposited amorphous layer by pulsed electron-beam irradiation

We demonstrate that a single short pulse of electron irradiation of appropriate energy is capable of recrystallizing epitaxially an amorphous Ge layer deposited on either or Si single-crystal substrate. The primary defects observed in the case were dislocations, whereas stacking faults were observed in samples

Epitaxial growth of deposited amorphous layer by laser annealing

We demonstrate that a single short pulse of laser irradiation of appropriate energy is capable of recrystallizing in open air an amorphous Si layer deposited on a (100) single-crystal substrate into an epitaxial layer. The laser pulse annealing technique is shown to overcome the interfacial oxide obstacle which usually leads to polycrystalline formation in normal thermal annealing

Quantum transport at the Dirac point: Mapping out the minimum conductivity from pristine to disordered graphene

The phase space for graphene's minimum conductivity $\sigma_\mathrm{min}$ is mapped out using Landauer theory modified for scattering using Fermi's Golden Rule, as well as the Non-Equilibrium Green's Function (NEGF) simulation with a Monte Carlo sampling over impurity distributions. The resulting `fan diagram' spans the range from ballistic to diffusive over varying aspect ratios ($W/L$), and bears several surprises. {The device aspect ratio determines how much tunneling (between contacts) is allowed and becomes the dominant factor for the evolution of $\sigma_{min}$ from ballistic to diffusive regime. We find an increasing (for $W/L>1$) or decreasing ($W/L<1$) trend in $\sigma_{min}$ vs. impurity density, all converging around $128q^2/\pi^3h\sim 4q^2/h$ at the dirty limit}. In the diffusive limit, the {conductivity} quasi-saturates due to the precise cancellation between the increase in conducting modes from charge puddles vs the reduction in average transmission from scattering at the Dirac Point. In the clean ballistic limit, the calculated conductivity of the lowest mode shows a surprising absence of Fabry-P\'{e}rot oscillations, unlike other materials including bilayer graphene. We argue that the lack of oscillations even at low temperature is a signature of Klein tunneling