34,424 research outputs found

    Strain modification in coherent Ge and SixGe1–x epitaxial films by ion-assisted molecular beam epitaxy

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    We have observed large changes in Ge and SixGe1–x layer strain during concurrent molecular beam epitaxial growth and low-energy bombardment. Layers are uniformly strained, coherent with the substrate, and contain no dislocations, suggesting that misfit strain is accommodated by free volume changes associated with injection of ion bombardment induced point defects. The dependence of layer strain on ion energy, ion-atom flux ratio, and temperature is consistent with the presence of a uniform dispersion of point defects at high concentration. Implications for distinguishing ion-surface interactions from ion-bulk interactions are discussed

    Large eddy simulations and direct numerical simulations of high speed turbulent reacting flows

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    This research is involved with the implementations of advanced computational schemes based on large eddy simulations (LES) and direct numerical simulations (DNS) to study the phenomenon of mixing and its coupling with chemical reactions in compressible turbulent flows. In the efforts related to LES, a research program was initiated to extend the present capabilities of this method for the treatment of chemically reacting flows, whereas in the DNS efforts, focus was on detailed investigations of the effects of compressibility, heat release, and nonequilibrium kinetics modeling in high speed reacting flows. The efforts to date were primarily focussed on simulations of simple flows, namely, homogeneous compressible flows and temporally developing hign speed mixing layers. A summary of the accomplishments is provided

    Self-consistent determination of the perpendicular strain profile of implanted Si by analysis of x-ray rocking curves

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    Results of a determination of strain perpendicular to the surface and of the damage in (100) Si single crystals irradiated by 250-keV Ar+ ions at 77 K are presented. Double-crystal x-ray diffraction and dynamical x-ray diffraction theory are used. Trial strain and damage distributions were guided by transmission electron microscope observations and Monte Carlo simulation of ion energy deposition. The perpendicular strain and damage profiles, determined after sequentially removing thin layers of Ar+-implanted Si, were shown to be self-consistent, proving the uniqueness of the deconvolution. Agreement between calculated and experimental rocking curves is obtained with strain and damage distributions which closely follow the shape of the trim simulations from the maximum damage to the end of the ion range but fall off more rapidly than the simulation curve near the surface. Comparison of the trim simulation and the strain profile of Ar+-implanted Si reveals the importance of annealing during and after implantation and the role of complex defects in the final residual strain distribution

    An easy-to-use diagnostic system development shell

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    The Diagnostic System Development Shell (DSDS), an expert system development shell for diagnostic systems, is described. The major objective of building the DSDS is to create a very easy to use and friendly environment for knowledge engineers and end-users. The DSDS is written in OPS5 and CommonLisp. It runs on a VAX/VMS system. A set of domain independent, generalized rules is built in the DSDS, so the users need not be concerned about building the rules. The facts are explicitly represented in a unified format. A powerful check facility which helps the user to check the errors in the created knowledge bases is provided. A judgement facility and other useful facilities are also available. A diagnostic system based on the DSDS system is question driven and can call or be called by other knowledge based systems written in OPS5 and CommonLisp. A prototype diagnostic system for diagnosing a Philips constant potential X-ray system has been built using the DSDS

    The Effect of Infections on the Mortality of Cirrhotic Patients with Hepatic Encephalopathy

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    [[abstract]]Cirrhotic patients are prone to having infections, which may aggravate hepatic encephalopathy (HE). However, the effect of infections on mortality in HE cirrhotic patients is not well described. The National Health Insurance Database, derived from the Taiwan National Health Insurance Programme, was used to identify 4150 adult HE cirrhotic patients hospitalized between 1 January 2004 and 31 December 2004. Nine hundred and eighty-five patients (23.7%) had one or more co-existing infections during their hospitalization. After Cox proportional hazard regression modelling adjusted by the patients' gender, age, and medical comorbidity disorders, the hazard ratios (HRs) in HE patients with infections for 30-day, 30- to 90-day, and 90-day to 1-year mortalities were 1.66 [95% confidence interval (CI) 1.42-1.94], 1.51 (95% CI 1.23-1.85) and 1.34 (95% CI 1.13-1.58), respectively. Compared to the non-infection group, the HRs of pneumonia, spontaneous bacterial peritonitis, urinary tract infection, sepsis without specific focus (SWSF), cellulitis, and biliary tract infection were 2.11, 1.48, 1.06, 2.21, 1.06, and 0.78, respectively, for 30-day mortality; 1.82, 1.22, 0.93, 2.24, 0.31, and 2.82, respectively, for 30- to 90-day mortality; and 2.03, 0.82, 1.24, 1.64, 1.14, and 0.60, respectively, for 90-day to 1-year mortality for HE cirrhotic patients. We conclude that infections increase the mortality of HE cirrhotic patients, especially pneumonia and SWSF.[[notice]]補正完畢[[incitationindex]]SCI[[booktype]]紙本[[booktype]]電子

    Integration of paper spray ionization high‐field asymmetric waveform ion mobility spectrometry for forensic applications

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    Rationale: Paper spray ionization (PSI) is an attractive ambient ionization source for mass spectrometry (MS) since it allows the combination of surface sampling and ionization. The minimal sample preparation inherent in this approach greatly reduces the time needed for analysis. However, the ions generated from interfering compounds in the sample and the paper substrate may interfere with the analyte ions. Therefore, the integration of PSI with high‐field asymmetric ion mobility spectrometry (FAIMS) is of significant interest since it should reduce the background ions entering the mass analyzer without complicating the analysis or increasing analysis time. Here we demonstrate the integration of PSI with FAIMS/MS and its potential for analysis of samples of forensic interest. Methods: In this work, the parameters that can influence the integration, including sampling and ionization by paper spray, the FAIMS separation of analytes from each other and background interferences, and the length of time that a usable signal can be observed for explosives on paper, were evaluated with the integrated system. Results: In the negative ion analysis of 2,4,6‐trinitrotoluene (TNT), pentaerythritol tetranitrate (PETN), octahydro‐1,3,5,7‐tetranitro‐1,3,5,7‐tetrazocine (HMX), and 1,3,5‐trinitroperhydro‐1,3,5‐ triazine (RDX), amounts as low as 1 ng on paper were readily observed. The successful positive ion separation of a set of illicit drugs including heroin, methamphetamine, and cocaine was also achieved. In addition, the positive ion analysis of the chemical warfare agent simulants dimethyl methylphosphonate (DMMP) and diisopropyl methylphosphonate (DIMP) was evaluated. Conclusions: The integration of PSI‐FAIMS/MS was demonstrated for the analyses of explosives in negative ion mode and for illicit drugs and CW simulants in positive mode. Paper background ions that could interfere with these analyses were separated by FAIMS. The compensation voltage of an ion obtained by FAIMS provided an additional identification parameter to be combined with the mass spectrum for each analyte

    Anomalous physical properties of underdoped weak-ferromagnetic superconductor RuSr2_2EuCu2_{2}O8_{8}

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    Similar to the optimal-doped, weak-ferromagnetic (WFM induced by canted antiferromagnetism, TCurie_{Curie} = 131 K) and superconducting (Tc_{c} = 56 K) RuSr2_{2}GdCu2_{2}O8_{8}, the underdoped RuSr2_{2}EuCu2_{2}O8_{8} (TCurie_{Curie} = 133 K, Tc_{c} = 36 K) also exhibited a spontaneous vortex state (SVS) between 16 K and 36 K. The low field (±\pm20 G) superconducting hysteresis loop indicates a weak and narrow Meissner state region of average lower critical field Bc1ave_{c1}^{ave}(T) = Bc1ave_{c1}^{ave}(0)[1 - (T/TSVS_{SVS})2^{2}], with Bc1ave_{c1}^{ave}(0) = 7 G and TSVS_{SVS} = 16 K. The vortex melting transition (Tmelting_{melting} = 21 K) below Tc_{c} obtained from the broad resistivity drop and the onset of diamagnetic signal indicates a vortex liquid region due to the coexistence and interplay between superconductivity and WFM order. No visible jump in specific heat was observed near Tc_{c} for Eu- and Gd-compound. This is not surprising, since the electronic specific heat is easily overshadowed by the large phonon and weak-ferromagnetic contributions. Furthermore, a broad resistivity transition due to low vortex melting temperature would also lead to a correspondingly reduced height of any specific heat jump. Finally, with the baseline from the nonmagnetic Eu-compound, specific heat data analysis confirms the magnetic entropy associated with antiferromagnetic ordering of Gd3+^{3+} (J = S = 7/2) at 2.5 K to be close to NAk\it{N_{A}k} ln8 as expected.Comment: 7 figure
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