34 research outputs found
ΠΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠ΅ ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡΠ½ΠΎΠ³ΠΎ ΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΊΠΎΡΡΡΠΈΡΠΈΠ΅Π½ΡΠ° Π·ΠΎΠ»Ρ-Π³Π΅Π»Ρ Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄ΠΎΠ²
Review of methods for studying temperature dependence of characteristics of optical waveguides fabricated by sol-gel technique is presented. The method of studying temperature properties of effective refractive index of waveguide modes with the help of thermoelectric module Peltier is proposed and approved. This method allows to widely expand the temperature researches of materials and waveguides made of them.ΠΡΠΎΠ²Π΅Π΄ΡΠ½ ΠΈ ΡΠΈΡΡΠ΅ΠΌΠ°ΡΠΈΠ·ΠΈΡΠΎΠ²Π°Π½ ΠΎΠ±Π·ΠΎΡ ΠΌΠ΅ΡΠΎΠ΄ΠΎΠ² ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡΠ½ΠΎΠΉ Π·Π°Π²ΠΈΡΠΈΠΌΠΎΡΡΠΈ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊ ΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΈΡ
Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄ΠΎΠ² Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ ΠΏΠ»ΡΠ½ΠΎΠΊ, ΠΈΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½Π½ΡΡ
ΠΏΠΎ Π·ΠΎΠ»Ρ-Π³Π΅Π»Ρ ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΠΈ. ΠΡΠ΅Π΄Π»ΠΎΠΆΠ΅Π½Π° ΠΈ ΠΎΠΏΡΠΎΠ±ΠΎΠ²Π°Π½Π° ΠΌΠ΅ΡΠΎΠ΄ΠΈΠΊΠ° ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡΠ½ΡΡ
ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠΉ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΠ³ΠΎ ΠΏΠΎΠΊΠ°Π·Π°ΡΠ΅Π»Ρ ΠΏΡΠ΅Π»ΠΎΠΌΠ»Π΅Π½ΠΈΡ Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π½ΡΡ
ΠΌΠΎΠ΄ Ρ ΠΏΠΎΠΌΠΎΡΡΡ ΡΠ΅ΡΠΌΠΎΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΌΠΎΠ΄ΡΠ»Ρ ΠΠ΅Π»ΡΡΡΠ΅. ΠΠ°Π½Π½Π°Ρ ΠΌΠ΅ΡΠΎΠ΄ΠΈΠΊΠ° ΠΎΡΠ»ΠΈΡΠ°Π΅ΡΡΡ ΠΏΡΠΎΡΡΠΎΡΠΎΠΉ ΠΈ ΡΠ΄ΠΎΠ±ΡΡΠ²ΠΎΠΌ ΠΈ ΠΏΡΠΈ ΡΡΠΎΠΌ ΠΏΠΎΠ·Π²ΠΎΠ»ΡΠ΅Ρ ΡΡΡΠ΅ΡΡΠ²Π΅Π½Π½ΠΎ ΡΠ°ΡΡΠΈΡΠΈΡΡ Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎΡΡΠΈ ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡΠ½ΡΡ
ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠΉ Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄ΠΎΠ² ΠΈ ΠΌΠ°ΡΠ΅ΡΠΈΠ°Π»ΠΎΠ², ΠΈΠ· ΠΊΠΎΡΠΎΡΡΡ
ΠΎΠ½ΠΈ ΠΈΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½Ρ
Growth of Si-Doped Polycrystalline Diamond Films on AlN Substrates by Microwave Plasma Chemical Vapor Deposition
Microcrystalline diamond films doped with silicon have been grown on aluminum nitride substrates by a microwave plasma CVD. The doping has been performed via adding silane in various concentrations to CH4-H2 reaction gas mixture in course of the deposition process. The films produced at the substrate temperatures of 750 to 950Β°C have been characterized by SEM, AFM, Raman and photoluminescence (PL) spectroscopy to assess the effect of Si doping on the diamond structure. The doped films showed bright photoluminescence of silicon-vacancy (SiV) color centers at 738 nm wavelength as well as noticeable side band at 723 nm. The optimum doping condition (SiH4/CH4 = 0.6%), that maximize the SiV PL emission, was determined for the range of silane concentrations SiH4/CH4 (0.0 - 0.9%) explored. A further PL enhancement can be achieved by increase in the substrate temperature. The applied in situ doping from gas phase is shown to be an easy and effective method to incorporate Si in diamond in a controllable way
Π‘Π²ΠΎΠΉΡΡΠ²Π° ΠΏΠ»ΡΠ½ΠΎΠΊ Π΄ΠΈΠΎΠΊΡΠΈΠ΄Π° ΡΠΈΡΠ°Π½Π°, ΠΈΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½Π½ΡΡ ΠΏΠΎ Π³Π΅Π»Ρ-ΡΠ΅Ρ Π½ΠΎΠ»ΠΎΠ³ΠΈΠΈ
Titanium dioxide films obtained by gel method are investigated. Optical properties of the fabricated films, such as thickness, refractive index and thermo-optic coefficient were studied by the methods of integrated optics which use waveguide propagation of radiation along the film. The parameters of the films fabricated by sol-gel and gel methods were compared. It was established that the pores in the films made by gel method contain smaller amounts of water and therefore have higher density. Refractive index of gel films was determined by the resonant angle of the waveguide excitation, calculated using the optical waveguide dispersion equations and amounted to 2.1-2.4. This value is higher than in the case of using sol-gel technology for fabrication of thin films (1.5-1.8). By the reflection and transmission spectra obtained using spectrophotometer, it was found that films produced under cetrain parameters of technological regime have anisotropic properties. It was established that the presence of anisotropy is due to the structure of the film in the form of a linear oligomer. The structure and morphology of the gel films was studied by electron microscopy. It is shown that the resulting films have a porous structure that allows their doping with substances allowing to create elements of integrated optics, such as lasers, amplifiers, etc.ΠΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½Ρ ΠΏΠ»ΡΠ½ΠΊΠΈ Π΄ΠΈΠΎΠΊΡΠΈΠ΄Π° ΡΠΈΡΠ°Π½Π°, ΠΏΠΎΠ»ΡΡΠ΅Π½Π½ΡΠ΅ Π³Π΅Π»Ρ-ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ. ΠΡΠΎΠ²Π΅Π΄Π΅Π½ΠΎ ΠΈΠ·ΡΡΠ΅Π½ΠΈΠ΅ ΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΡΠ²ΠΎΠΉΡΡΠ² ΠΈΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½Π½ΡΡ
ΠΏΠ»ΡΠ½ΠΎΠΊ, ΡΠ°ΠΊΠΈΡ
ΠΊΠ°ΠΊ ΡΠΎΠ»ΡΠΈΠ½Π°, ΠΏΠΎΠΊΠ°Π·Π°ΡΠ΅Π»Ρ ΠΏΡΠ΅Π»ΠΎΠΌΠ»Π΅Π½ΠΈΡ ΠΈ ΡΠ΅ΡΠΌΠΎΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΈΠΉ ΠΊΠΎΡΡΡΠΈΡΠΈΠ΅Π½Ρ, Ρ ΠΏΠΎΠΌΠΎΡΡΡ ΠΌΠ΅ΡΠΎΠ΄ΠΎΠ² ΠΈΠ½ΡΠ΅Π³ΡΠ°Π»ΡΠ½ΠΎΠΉ ΠΎΠΏΡΠΈΠΊΠΈ, ΠΈΡΠΏΠΎΠ»ΡΠ·ΡΡΡΠΈΡ
Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π½ΠΎΠ΅ ΡΠ°ΡΠΏΡΠΎΡΡΡΠ°Π½Π΅Π½ΠΈΠ΅ ΠΈΠ·Π»ΡΡΠ΅Π½ΠΈΡ Π²Π΄ΠΎΠ»Ρ ΠΏΠ»ΡΠ½ΠΊΠΈ. ΠΡΠΎΠ²Π΅Π΄Π΅Π½ΠΎ ΡΡΠ°Π²Π½Π΅Π½ΠΈΠ΅ ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΠΎΠ² ΠΈΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½Π½ΡΡ
ΠΏΠ»ΡΠ½ΠΎΠΊ Π·ΠΎΠ»Ρ-Π³Π΅Π»Ρ ΠΈ Π³Π΅Π»Ρ ΠΌΠ΅ΡΠΎΠ΄Π°ΠΌΠΈ. Π£ΡΡΠ°Π½ΠΎΠ²Π»Π΅Π½ΠΎ, ΡΡΠΎ ΠΏΠΎΡΡ Π² ΠΏΠ»ΡΠ½ΠΊΠ°Ρ
, ΠΈΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½Π½ΡΡ
Π³Π΅Π»Ρ-ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ, ΡΠΎΠ΄Π΅ΡΠΆΠ°Ρ ΠΌΠ΅Π½ΡΡΠ΅Π΅ ΠΊΠΎΠ»ΠΈΡΠ΅ΡΡΠ²ΠΎ Π²ΠΎΠ΄Ρ ΠΈ ΠΏΠΎΡΡΠΎΠΌΡ ΠΎΠ±Π»Π°Π΄Π°ΡΡ Π±ΠΎΠ»ΡΡΠ΅ΠΉ ΠΏΠ»ΠΎΡΠ½ΠΎΡΡΡΡ. ΠΠΎΠΊΠ°Π·Π°ΡΠ΅Π»Ρ ΠΏΡΠ΅Π»ΠΎΠΌΠ»Π΅Π½ΠΈΡ Π³Π΅Π»Ρ-ΠΏΠ»ΡΠ½ΠΎΠΊ Π±ΡΠ» ΠΎΠΏΡΠ΅Π΄Π΅Π»ΡΠ½ ΠΏΠΎ ΡΠ΅Π·ΠΎΠ½Π°Π½ΡΠ½ΠΎΠΌΡ ΡΠ³Π»Ρ Π²ΠΎΠ·Π±ΡΠΆΠ΄Π΅Π½ΠΈΡ Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π°, ΡΠ°ΡΡΡΠΈΡΠ°Π½ Ρ ΠΏΠΎΠΌΠΎΡΡΡ Π΄ΠΈΡΠΏΠ΅ΡΡΠΈΠΎΠ½Π½ΡΡ
ΡΡΠ°Π²Π½Π΅Π½ΠΈΠΉ ΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π° ΠΈ ΡΠΎΡΡΠ°Π²ΠΈΠ» 2,1-2,4. ΠΡΠΎ Π·Π½Π°ΡΠ΅Π½ΠΈΠ΅ Π²ΡΡΠ΅, ΡΠ΅ΠΌ Π² ΡΠ»ΡΡΠ°Π΅ Π·ΠΎΠ»Ρ-Π³Π΅Π»Ρ-ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΠΈ ΠΏΠΎΠ»ΡΡΠ΅Π½ΠΈΡ ΡΠΎΠ½ΠΊΠΈΡ
ΠΏΠ»ΡΠ½ΠΎΠΊ (1,5-1,8). ΠΠΎ ΡΠΏΠ΅ΠΊΡΡΠ°ΠΌ ΠΏΡΠΎΠΏΡΡΠΊΠ°Π½ΠΈΡ ΠΈ ΠΎΡΡΠ°ΠΆΠ΅Π½ΠΈΡ, ΠΏΠΎΠ»ΡΡΠ΅Π½Π½ΡΡ
Ρ ΠΏΠΎΠΌΠΎΡΡΡ ΡΠΏΠ΅ΠΊΡΡΠΎΡΠΎΡΠΎΠΌΠ΅ΡΡΠ°, Π±ΡΠ»ΠΎ ΡΡΡΠ°Π½ΠΎΠ²Π»Π΅Π½ΠΎ Π½Π°Π»ΠΈΡΠΈΠ΅ Π°Π½ΠΈΠ·ΠΎΡΡΠΎΠΏΠΈΠΈ Π² ΠΏΠ»ΡΠ½ΠΊΠ°Ρ
, ΠΈΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½Π½ΡΡ
ΠΏΡΠΈ ΠΎΠΏΡΠ΅Π΄Π΅Π»ΡΠ½Π½ΡΡ
ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΠ°Ρ
ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΡΠ΅ΠΆΠΈΠΌΠ°. Π£ΡΡΠ°Π½ΠΎΠ²Π»Π΅Π½ΠΎ, ΡΡΠΎ Π½Π°Π»ΠΈΡΠΈΠ΅ Π°Π½ΠΈΠ·ΠΎΡΡΠΎΠΏΠΈΠΈ ΡΠ²ΡΠ·Π°Π½ΠΎ ΡΠΎ ΡΡΡΡΠΊΡΡΡΠΎΠΉ ΠΏΠ»ΡΠ½ΠΊΠΈ Π² Π²ΠΈΠ΄Π΅ Π»ΠΈΠ½Π΅ΠΉΠ½ΠΎΠ³ΠΎ ΠΎΠ»ΠΈΠ³ΠΎΠΌΠ΅ΡΠ°. Π‘ΡΡΠΎΠ΅Π½ΠΈΠ΅ ΠΈ ΠΌΠΎΡΡΠΎΠ»ΠΎΠ³ΠΈΡ Π³Π΅Π»Ρ ΠΏΠ»ΡΠ½ΠΎΠΊ Π±ΡΠ»Π° ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½Π° ΠΌΠ΅ΡΠΎΠ΄Π°ΠΌΠΈ ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎΠΉ ΠΌΠΈΠΊΡΠΎΡΠΊΠΎΠΏΠΈΠΈ. ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ ΠΏΠΎΠ»ΡΡΠ΅Π½Π½ΡΠ΅ ΠΏΠ»ΡΠ½ΠΊΠΈ ΠΈΠΌΠ΅ΡΡ ΠΏΠΎΡΠΈΡΡΡΡ ΡΡΡΡΠΊΡΡΡΡ, ΡΡΠΎ Π΄ΠΎΠΏΡΡΠΊΠ°Π΅Ρ Π»Π΅Π³ΠΈΡΠΎΠ²Π°Π½ΠΈΠ΅ ΠΈΡ
Π²Π΅ΡΠ΅ΡΡΠ²Π°ΠΌΠΈ, ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡΡΠΈΠΌΠΈ ΡΠΎΠ·Π΄Π°Π²Π°ΡΡ ΡΠ»Π΅ΠΌΠ΅Π½ΡΡ ΠΈΠ½ΡΠ΅Π³ΡΠ°Π»ΡΠ½ΠΎΠΉ ΠΎΠΏΡΠΈΠΊΠΈ, ΡΠ°ΠΊΠΈΠ΅ ΠΊΠ°ΠΊ Π»Π°Π·Π΅ΡΡ, ΡΡΠΈΠ»ΠΈΡΠ΅Π»ΠΈ ΠΈ Π΄Ρ
Π‘Π²ΠΎΠΉΡΡΠ²Π° ΠΏΠ»ΡΠ½ΠΎΠΊ Π΄ΠΈΠΎΠΊΡΠΈΠ΄Π° ΡΠΈΡΠ°Π½Π°, ΠΈΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½Π½ΡΡ ΠΏΠΎ Π³Π΅Π»Ρ-ΡΠ΅Ρ Π½ΠΎΠ»ΠΎΠ³ΠΈΠΈ
Titanium dioxide films obtained by gel method are investigated. Optical properties of the fabricated films, such as thickness, refractive index and thermo-optic coefficient were studied by the methods of integrated optics which use waveguide propagation of radiation along the film. The parameters of the films fabricated by sol-gel and gel methods were compared. It was established that the pores in the films made by gel method contain smaller amounts of water and therefore have higher density. Refractive index of gel films was determined by the resonant angle of the waveguide excitation, calculated using the optical waveguide dispersion equations and amounted to 2.1-2.4. This value is higher than in the case of using sol-gel technology for fabrication of thin films (1.5-1.8). By the reflection and transmission spectra obtained using spectrophotometer, it was found that films produced under cetrain parameters of technological regime have anisotropic properties. It was established that the presence of anisotropy is due to the structure of the film in the form of a linear oligomer. The structure and morphology of the gel films was studied by electron microscopy. It is shown that the resulting films have a porous structure that allows their doping with substances allowing to create elements of integrated optics, such as lasers, amplifiers, etc.ΠΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½Ρ ΠΏΠ»ΡΠ½ΠΊΠΈ Π΄ΠΈΠΎΠΊΡΠΈΠ΄Π° ΡΠΈΡΠ°Π½Π°, ΠΏΠΎΠ»ΡΡΠ΅Π½Π½ΡΠ΅ Π³Π΅Π»Ρ-ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ. ΠΡΠΎΠ²Π΅Π΄Π΅Π½ΠΎ ΠΈΠ·ΡΡΠ΅Π½ΠΈΠ΅ ΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΡΠ²ΠΎΠΉΡΡΠ² ΠΈΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½Π½ΡΡ
ΠΏΠ»ΡΠ½ΠΎΠΊ, ΡΠ°ΠΊΠΈΡ
ΠΊΠ°ΠΊ ΡΠΎΠ»ΡΠΈΠ½Π°, ΠΏΠΎΠΊΠ°Π·Π°ΡΠ΅Π»Ρ ΠΏΡΠ΅Π»ΠΎΠΌΠ»Π΅Π½ΠΈΡ ΠΈ ΡΠ΅ΡΠΌΠΎΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΈΠΉ ΠΊΠΎΡΡΡΠΈΡΠΈΠ΅Π½Ρ, Ρ ΠΏΠΎΠΌΠΎΡΡΡ ΠΌΠ΅ΡΠΎΠ΄ΠΎΠ² ΠΈΠ½ΡΠ΅Π³ΡΠ°Π»ΡΠ½ΠΎΠΉ ΠΎΠΏΡΠΈΠΊΠΈ, ΠΈΡΠΏΠΎΠ»ΡΠ·ΡΡΡΠΈΡ
Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π½ΠΎΠ΅ ΡΠ°ΡΠΏΡΠΎΡΡΡΠ°Π½Π΅Π½ΠΈΠ΅ ΠΈΠ·Π»ΡΡΠ΅Π½ΠΈΡ Π²Π΄ΠΎΠ»Ρ ΠΏΠ»ΡΠ½ΠΊΠΈ. ΠΡΠΎΠ²Π΅Π΄Π΅Π½ΠΎ ΡΡΠ°Π²Π½Π΅Π½ΠΈΠ΅ ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΠΎΠ² ΠΈΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½Π½ΡΡ
ΠΏΠ»ΡΠ½ΠΎΠΊ Π·ΠΎΠ»Ρ-Π³Π΅Π»Ρ ΠΈ Π³Π΅Π»Ρ ΠΌΠ΅ΡΠΎΠ΄Π°ΠΌΠΈ. Π£ΡΡΠ°Π½ΠΎΠ²Π»Π΅Π½ΠΎ, ΡΡΠΎ ΠΏΠΎΡΡ Π² ΠΏΠ»ΡΠ½ΠΊΠ°Ρ
, ΠΈΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½Π½ΡΡ
Π³Π΅Π»Ρ-ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ, ΡΠΎΠ΄Π΅ΡΠΆΠ°Ρ ΠΌΠ΅Π½ΡΡΠ΅Π΅ ΠΊΠΎΠ»ΠΈΡΠ΅ΡΡΠ²ΠΎ Π²ΠΎΠ΄Ρ ΠΈ ΠΏΠΎΡΡΠΎΠΌΡ ΠΎΠ±Π»Π°Π΄Π°ΡΡ Π±ΠΎΠ»ΡΡΠ΅ΠΉ ΠΏΠ»ΠΎΡΠ½ΠΎΡΡΡΡ. ΠΠΎΠΊΠ°Π·Π°ΡΠ΅Π»Ρ ΠΏΡΠ΅Π»ΠΎΠΌΠ»Π΅Π½ΠΈΡ Π³Π΅Π»Ρ-ΠΏΠ»ΡΠ½ΠΎΠΊ Π±ΡΠ» ΠΎΠΏΡΠ΅Π΄Π΅Π»ΡΠ½ ΠΏΠΎ ΡΠ΅Π·ΠΎΠ½Π°Π½ΡΠ½ΠΎΠΌΡ ΡΠ³Π»Ρ Π²ΠΎΠ·Π±ΡΠΆΠ΄Π΅Π½ΠΈΡ Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π°, ΡΠ°ΡΡΡΠΈΡΠ°Π½ Ρ ΠΏΠΎΠΌΠΎΡΡΡ Π΄ΠΈΡΠΏΠ΅ΡΡΠΈΠΎΠ½Π½ΡΡ
ΡΡΠ°Π²Π½Π΅Π½ΠΈΠΉ ΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π° ΠΈ ΡΠΎΡΡΠ°Π²ΠΈΠ» 2,1-2,4. ΠΡΠΎ Π·Π½Π°ΡΠ΅Π½ΠΈΠ΅ Π²ΡΡΠ΅, ΡΠ΅ΠΌ Π² ΡΠ»ΡΡΠ°Π΅ Π·ΠΎΠ»Ρ-Π³Π΅Π»Ρ-ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΠΈ ΠΏΠΎΠ»ΡΡΠ΅Π½ΠΈΡ ΡΠΎΠ½ΠΊΠΈΡ
ΠΏΠ»ΡΠ½ΠΎΠΊ (1,5-1,8). ΠΠΎ ΡΠΏΠ΅ΠΊΡΡΠ°ΠΌ ΠΏΡΠΎΠΏΡΡΠΊΠ°Π½ΠΈΡ ΠΈ ΠΎΡΡΠ°ΠΆΠ΅Π½ΠΈΡ, ΠΏΠΎΠ»ΡΡΠ΅Π½Π½ΡΡ
Ρ ΠΏΠΎΠΌΠΎΡΡΡ ΡΠΏΠ΅ΠΊΡΡΠΎΡΠΎΡΠΎΠΌΠ΅ΡΡΠ°, Π±ΡΠ»ΠΎ ΡΡΡΠ°Π½ΠΎΠ²Π»Π΅Π½ΠΎ Π½Π°Π»ΠΈΡΠΈΠ΅ Π°Π½ΠΈΠ·ΠΎΡΡΠΎΠΏΠΈΠΈ Π² ΠΏΠ»ΡΠ½ΠΊΠ°Ρ
, ΠΈΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½Π½ΡΡ
ΠΏΡΠΈ ΠΎΠΏΡΠ΅Π΄Π΅Π»ΡΠ½Π½ΡΡ
ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΠ°Ρ
ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΡΠ΅ΠΆΠΈΠΌΠ°. Π£ΡΡΠ°Π½ΠΎΠ²Π»Π΅Π½ΠΎ, ΡΡΠΎ Π½Π°Π»ΠΈΡΠΈΠ΅ Π°Π½ΠΈΠ·ΠΎΡΡΠΎΠΏΠΈΠΈ ΡΠ²ΡΠ·Π°Π½ΠΎ ΡΠΎ ΡΡΡΡΠΊΡΡΡΠΎΠΉ ΠΏΠ»ΡΠ½ΠΊΠΈ Π² Π²ΠΈΠ΄Π΅ Π»ΠΈΠ½Π΅ΠΉΠ½ΠΎΠ³ΠΎ ΠΎΠ»ΠΈΠ³ΠΎΠΌΠ΅ΡΠ°. Π‘ΡΡΠΎΠ΅Π½ΠΈΠ΅ ΠΈ ΠΌΠΎΡΡΠΎΠ»ΠΎΠ³ΠΈΡ Π³Π΅Π»Ρ ΠΏΠ»ΡΠ½ΠΎΠΊ Π±ΡΠ»Π° ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½Π° ΠΌΠ΅ΡΠΎΠ΄Π°ΠΌΠΈ ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎΠΉ ΠΌΠΈΠΊΡΠΎΡΠΊΠΎΠΏΠΈΠΈ. ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ ΠΏΠΎΠ»ΡΡΠ΅Π½Π½ΡΠ΅ ΠΏΠ»ΡΠ½ΠΊΠΈ ΠΈΠΌΠ΅ΡΡ ΠΏΠΎΡΠΈΡΡΡΡ ΡΡΡΡΠΊΡΡΡΡ, ΡΡΠΎ Π΄ΠΎΠΏΡΡΠΊΠ°Π΅Ρ Π»Π΅Π³ΠΈΡΠΎΠ²Π°Π½ΠΈΠ΅ ΠΈΡ
Π²Π΅ΡΠ΅ΡΡΠ²Π°ΠΌΠΈ, ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡΡΠΈΠΌΠΈ ΡΠΎΠ·Π΄Π°Π²Π°ΡΡ ΡΠ»Π΅ΠΌΠ΅Π½ΡΡ ΠΈΠ½ΡΠ΅Π³ΡΠ°Π»ΡΠ½ΠΎΠΉ ΠΎΠΏΡΠΈΠΊΠΈ, ΡΠ°ΠΊΠΈΠ΅ ΠΊΠ°ΠΊ Π»Π°Π·Π΅ΡΡ, ΡΡΠΈΠ»ΠΈΡΠ΅Π»ΠΈ ΠΈ Π΄Ρ
Integrated optical devices based on sol - Gel waveguides using the temperature dependence of the effective refractive index
A possibility of designing optical waveguide devices based on sol - gel SiO2 - TiO2 films using the temperature dependence of the effective refractive index is shown. The dependences of the device characteristics on the parameters of the film and opticalsystem elements are analysed. The operation of a temperature recorder and a temperature limiter with a resolution of 0.6 K mm-1 is demonstrated. The film and output-prism parameters are optimised. Β© 2014 Kvantovaya Elektronika and Turpion Ltd
Integrated optical devices based on solβgel waveguides using the temperature dependence of the effective refractive index
A possibility of designing optical waveguide devices based on sol - gel SiO2 - TiO2 films using the temperature dependence of the effective refractive index is shown. The dependences of the device characteristics on the parameters of the film and opticalsystem elements are analysed. The operation of a temperature recorder and a temperature limiter with a resolution of 0.6 K mm-1 is demonstrated. The film and output-prism parameters are optimised. Β© 2014 Kvantovaya Elektronika and Turpion Ltd
Investigation of the temperature coefficient of the effective refractive index of optical sol-gel waveguides using a Peltier module
A method for studying the temperature dependence of the effective refractive index of optical waveguides was proposed and tested. The samples were heated using a Peltier thermo-optic module. This technique is simple and easy and improves the measurement accuracy and capabilities of temperature studies of optical waveguides and the materials from which they are made. Obtained dependences can be used to determine the thermo-optic coefficient of film materials. The method was tested on optical waveguides using SiO2-TiO2 films produced by sol-gel technology. Β© 2013 Allerton Press, Inc
Investigation of the temperature coefficient of the effective refractive index of optical sol-gel waveguides using a Peltier module
A method for studying the temperature dependence of the effective refractive index of optical waveguides was proposed and tested. The samples were heated using a Peltier thermo-optic module. This technique is simple and easy and improves the measurement accuracy and capabilities of temperature studies of optical waveguides and the materials from which they are made. Obtained dependences can be used to determine the thermo-optic coefficient of film materials. The method was tested on optical waveguides using SiO2-TiO2 films produced by sol-gel technology. Β© 2013 Allerton Press, Inc
Integrated optical devices based on sol - Gel waveguides using the temperature dependence of the effective refractive index
A possibility of designing optical waveguide devices based on sol - gel SiO2 - TiO2 films using the temperature dependence of the effective refractive index is shown. The dependences of the device characteristics on the parameters of the film and opticalsystem elements are analysed. The operation of a temperature recorder and a temperature limiter with a resolution of 0.6 K mm-1 is demonstrated. The film and output-prism parameters are optimised. Β© 2014 Kvantovaya Elektronika and Turpion Ltd