34 research outputs found

    ИсслСдованиС Ρ‚Π΅ΠΌΠΏΠ΅Ρ€Π°Ρ‚ΡƒΡ€Π½ΠΎΠ³ΠΎ оптичСского коэффициСнта золь-гСль Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄ΠΎΠ²

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    Review of methods for studying temperature dependence of characteristics of optical waveguides fabricated by sol-gel technique is presented. The method of studying temperature properties of effective refractive index of waveguide modes with the help of thermoelectric module Peltier is proposed and approved. This method allows to widely expand the temperature researches of materials and waveguides made of them.ΠŸΡ€ΠΎΠ²Π΅Π΄Ρ‘Π½ ΠΈ систСматизирован ΠΎΠ±Π·ΠΎΡ€ ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠ² исслСдования Ρ‚Π΅ΠΌΠΏΠ΅Ρ€Π°Ρ‚ΡƒΡ€Π½ΠΎΠΉ зависимости характСристик оптичСских Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄ΠΎΠ² Π½Π° основС ΠΏΠ»Ρ‘Π½ΠΎΠΊ, ΠΈΠ·Π³ΠΎΡ‚ΠΎΠ²Π»Π΅Π½Π½Ρ‹Ρ… ΠΏΠΎ золь-гСль Ρ‚Π΅Ρ…Π½ΠΎΠ»ΠΎΠ³ΠΈΠΈ. ΠŸΡ€Π΅Π΄Π»ΠΎΠΆΠ΅Π½Π° ΠΈ ΠΎΠΏΡ€ΠΎΠ±ΠΎΠ²Π°Π½Π° ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΈΠΊΠ° Ρ‚Π΅ΠΌΠΏΠ΅Ρ€Π°Ρ‚ΡƒΡ€Π½Ρ‹Ρ… исслСдований эффСктивного показатСля прСломлСния Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π½Ρ‹Ρ… ΠΌΠΎΠ΄ с ΠΏΠΎΠΌΠΎΡ‰ΡŒΡŽ тСрмоэлСктричСского модуля ΠŸΠ΅Π»ΡŒΡ‚ΡŒΠ΅. Данная ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΈΠΊΠ° отличаСтся простотой ΠΈ удобством ΠΈ ΠΏΡ€ΠΈ этом позволяСт сущСствСнно Ρ€Π°ΡΡˆΠΈΡ€ΠΈΡ‚ΡŒ возмоТности Ρ‚Π΅ΠΌΠΏΠ΅Ρ€Π°Ρ‚ΡƒΡ€Π½Ρ‹Ρ… исслСдований Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄ΠΎΠ² ΠΈ ΠΌΠ°Ρ‚Π΅Ρ€ΠΈΠ°Π»ΠΎΠ², ΠΈΠ· ΠΊΠΎΡ‚ΠΎΡ€Ρ‹Ρ… ΠΎΠ½ΠΈ ΠΈΠ·Π³ΠΎΡ‚ΠΎΠ²Π»Π΅Π½Ρ‹

    Growth of Si-Doped Polycrystalline Diamond Films on AlN Substrates by Microwave Plasma Chemical Vapor Deposition

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    Microcrystalline diamond films doped with silicon have been grown on aluminum nitride substrates by a microwave plasma CVD. The doping has been performed via adding silane in various concentrations to CH4-H2 reaction gas mixture in course of the deposition process. The films produced at the substrate temperatures of 750 to 950Β°C have been characterized by SEM, AFM, Raman and photoluminescence (PL) spectroscopy to assess the effect of Si doping on the diamond structure. The doped films showed bright photoluminescence of silicon-vacancy (SiV) color centers at 738 nm wavelength as well as noticeable side band at 723 nm. The optimum doping condition (SiH4/CH4 = 0.6%), that maximize the SiV PL emission, was determined for the range of silane concentrations SiH4/CH4 (0.0 - 0.9%) explored. A further PL enhancement can be achieved by increase in the substrate temperature. The applied in situ doping from gas phase is shown to be an easy and effective method to incorporate Si in diamond in a controllable way

    Бвойства ΠΏΠ»Ρ‘Π½ΠΎΠΊ диоксида Ρ‚ΠΈΡ‚Π°Π½Π°, ΠΈΠ·Π³ΠΎΡ‚ΠΎΠ²Π»Π΅Π½Π½Ρ‹Ρ… ΠΏΠΎ гСль-Ρ‚Π΅Ρ…Π½ΠΎΠ»ΠΎΠ³ΠΈΠΈ

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    Titanium dioxide films obtained by gel method are investigated. Optical properties of the fabricated films, such as thickness, refractive index and thermo-optic coefficient were studied by the methods of integrated optics which use waveguide propagation of radiation along the film. The parameters of the films fabricated by sol-gel and gel methods were compared. It was established that the pores in the films made by gel method contain smaller amounts of water and therefore have higher density. Refractive index of gel films was determined by the resonant angle of the waveguide excitation, calculated using the optical waveguide dispersion equations and amounted to 2.1-2.4. This value is higher than in the case of using sol-gel technology for fabrication of thin films (1.5-1.8). By the reflection and transmission spectra obtained using spectrophotometer, it was found that films produced under cetrain parameters of technological regime have anisotropic properties. It was established that the presence of anisotropy is due to the structure of the film in the form of a linear oligomer. The structure and morphology of the gel films was studied by electron microscopy. It is shown that the resulting films have a porous structure that allows their doping with substances allowing to create elements of integrated optics, such as lasers, amplifiers, etc.Π˜ΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½Ρ‹ ΠΏΠ»Ρ‘Π½ΠΊΠΈ диоксида Ρ‚ΠΈΡ‚Π°Π½Π°, ΠΏΠΎΠ»ΡƒΡ‡Π΅Π½Π½Ρ‹Π΅ гСль-ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠΌ. ΠŸΡ€ΠΎΠ²Π΅Π΄Π΅Π½ΠΎ ΠΈΠ·ΡƒΡ‡Π΅Π½ΠΈΠ΅ оптичСских свойств ΠΈΠ·Π³ΠΎΡ‚ΠΎΠ²Π»Π΅Π½Π½Ρ‹Ρ… ΠΏΠ»Ρ‘Π½ΠΎΠΊ, Ρ‚Π°ΠΊΠΈΡ… ΠΊΠ°ΠΊ Ρ‚ΠΎΠ»Ρ‰ΠΈΠ½Π°, ΠΏΠΎΠΊΠ°Π·Π°Ρ‚Π΅Π»ΡŒ прСломлСния ΠΈ тСрмооптичСский коэффициСнт, с ΠΏΠΎΠΌΠΎΡ‰ΡŒΡŽ ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠ² ΠΈΠ½Ρ‚Π΅Π³Ρ€Π°Π»ΡŒΠ½ΠΎΠΉ ΠΎΠΏΡ‚ΠΈΠΊΠΈ, ΠΈΡΠΏΠΎΠ»ΡŒΠ·ΡƒΡŽΡ‰ΠΈΡ… Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π½ΠΎΠ΅ распространСниС излучСния вдоль ΠΏΠ»Ρ‘Π½ΠΊΠΈ. ΠŸΡ€ΠΎΠ²Π΅Π΄Π΅Π½ΠΎ сравнСниС ΠΏΠ°Ρ€Π°ΠΌΠ΅Ρ‚Ρ€ΠΎΠ² ΠΈΠ·Π³ΠΎΡ‚ΠΎΠ²Π»Π΅Π½Π½Ρ‹Ρ… ΠΏΠ»Ρ‘Π½ΠΎΠΊ золь-гСль ΠΈ гСль ΠΌΠ΅Ρ‚ΠΎΠ΄Π°ΠΌΠΈ. УстановлСно, Ρ‡Ρ‚ΠΎ ΠΏΠΎΡ€Ρ‹ Π² ΠΏΠ»Ρ‘Π½ΠΊΠ°Ρ…, ΠΈΠ·Π³ΠΎΡ‚ΠΎΠ²Π»Π΅Π½Π½Ρ‹Ρ… гСль-ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠΌ, содСрТат мСньшСС количСство Π²ΠΎΠ΄Ρ‹ ΠΈ поэтому ΠΎΠ±Π»Π°Π΄Π°ΡŽΡ‚ большСй ΠΏΠ»ΠΎΡ‚Π½ΠΎΡΡ‚ΡŒΡŽ. ΠŸΠΎΠΊΠ°Π·Π°Ρ‚Π΅Π»ΡŒ прСломлСния гСль-ΠΏΠ»Ρ‘Π½ΠΎΠΊ Π±Ρ‹Π» ΠΎΠΏΡ€Π΅Π΄Π΅Π»Ρ‘Π½ ΠΏΠΎ рСзонансному ΡƒΠ³Π»Ρƒ возбуТдСния Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π°, рассчитан с ΠΏΠΎΠΌΠΎΡ‰ΡŒΡŽ диспСрсионных ΡƒΡ€Π°Π²Π½Π΅Π½ΠΈΠΉ оптичСского Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π° ΠΈ составил 2,1-2,4. Π­Ρ‚ΠΎ Π·Π½Π°Ρ‡Π΅Π½ΠΈΠ΅ Π²Ρ‹ΡˆΠ΅, Ρ‡Π΅ΠΌ Π² случаС золь-гСль-Ρ‚Π΅Ρ…Π½ΠΎΠ»ΠΎΠ³ΠΈΠΈ получСния Ρ‚ΠΎΠ½ΠΊΠΈΡ… ΠΏΠ»Ρ‘Π½ΠΎΠΊ (1,5-1,8). По спСктрам пропускания ΠΈ отраТСния, ΠΏΠΎΠ»ΡƒΡ‡Π΅Π½Π½Ρ‹Ρ… с ΠΏΠΎΠΌΠΎΡ‰ΡŒΡŽ спСктрофотомСтра, Π±Ρ‹Π»ΠΎ установлСно Π½Π°Π»ΠΈΡ‡ΠΈΠ΅ Π°Π½ΠΈΠ·ΠΎΡ‚Ρ€ΠΎΠΏΠΈΠΈ Π² ΠΏΠ»Ρ‘Π½ΠΊΠ°Ρ…, ΠΈΠ·Π³ΠΎΡ‚ΠΎΠ²Π»Π΅Π½Π½Ρ‹Ρ… ΠΏΡ€ΠΈ ΠΎΠΏΡ€Π΅Π΄Π΅Π»Ρ‘Π½Π½Ρ‹Ρ… ΠΏΠ°Ρ€Π°ΠΌΠ΅Ρ‚Ρ€Π°Ρ… тСхнологичСского Ρ€Π΅ΠΆΠΈΠΌΠ°. УстановлСно, Ρ‡Ρ‚ΠΎ Π½Π°Π»ΠΈΡ‡ΠΈΠ΅ Π°Π½ΠΈΠ·ΠΎΡ‚Ρ€ΠΎΠΏΠΈΠΈ связано со структурой ΠΏΠ»Ρ‘Π½ΠΊΠΈ Π² Π²ΠΈΠ΄Π΅ Π»ΠΈΠ½Π΅ΠΉΠ½ΠΎΠ³ΠΎ ΠΎΠ»ΠΈΠ³ΠΎΠΌΠ΅Ρ€Π°. Π‘Ρ‚Ρ€ΠΎΠ΅Π½ΠΈΠ΅ ΠΈ морфология гСль ΠΏΠ»Ρ‘Π½ΠΎΠΊ Π±Ρ‹Π»Π° исслСдована ΠΌΠ΅Ρ‚ΠΎΠ΄Π°ΠΌΠΈ элСктронной микроскопии. Показано, Ρ‡Ρ‚ΠΎ ΠΏΠΎΠ»ΡƒΡ‡Π΅Π½Π½Ρ‹Π΅ ΠΏΠ»Ρ‘Π½ΠΊΠΈ ΠΈΠΌΠ΅ΡŽΡ‚ ΠΏΠΎΡ€ΠΈΡΡ‚ΡƒΡŽ структуру, Ρ‡Ρ‚ΠΎ допускаСт Π»Π΅Π³ΠΈΡ€ΠΎΠ²Π°Π½ΠΈΠ΅ ΠΈΡ… вСщСствами, ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡŽΡ‰ΠΈΠΌΠΈ ΡΠΎΠ·Π΄Π°Π²Π°Ρ‚ΡŒ элСмСнты ΠΈΠ½Ρ‚Π΅Π³Ρ€Π°Π»ΡŒΠ½ΠΎΠΉ ΠΎΠΏΡ‚ΠΈΠΊΠΈ, Ρ‚Π°ΠΊΠΈΠ΅ ΠΊΠ°ΠΊ Π»Π°Π·Π΅Ρ€Ρ‹, усилитСли ΠΈ Π΄Ρ€

    Бвойства ΠΏΠ»Ρ‘Π½ΠΎΠΊ диоксида Ρ‚ΠΈΡ‚Π°Π½Π°, ΠΈΠ·Π³ΠΎΡ‚ΠΎΠ²Π»Π΅Π½Π½Ρ‹Ρ… ΠΏΠΎ гСль-Ρ‚Π΅Ρ…Π½ΠΎΠ»ΠΎΠ³ΠΈΠΈ

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    Titanium dioxide films obtained by gel method are investigated. Optical properties of the fabricated films, such as thickness, refractive index and thermo-optic coefficient were studied by the methods of integrated optics which use waveguide propagation of radiation along the film. The parameters of the films fabricated by sol-gel and gel methods were compared. It was established that the pores in the films made by gel method contain smaller amounts of water and therefore have higher density. Refractive index of gel films was determined by the resonant angle of the waveguide excitation, calculated using the optical waveguide dispersion equations and amounted to 2.1-2.4. This value is higher than in the case of using sol-gel technology for fabrication of thin films (1.5-1.8). By the reflection and transmission spectra obtained using spectrophotometer, it was found that films produced under cetrain parameters of technological regime have anisotropic properties. It was established that the presence of anisotropy is due to the structure of the film in the form of a linear oligomer. The structure and morphology of the gel films was studied by electron microscopy. It is shown that the resulting films have a porous structure that allows their doping with substances allowing to create elements of integrated optics, such as lasers, amplifiers, etc.Π˜ΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½Ρ‹ ΠΏΠ»Ρ‘Π½ΠΊΠΈ диоксида Ρ‚ΠΈΡ‚Π°Π½Π°, ΠΏΠΎΠ»ΡƒΡ‡Π΅Π½Π½Ρ‹Π΅ гСль-ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠΌ. ΠŸΡ€ΠΎΠ²Π΅Π΄Π΅Π½ΠΎ ΠΈΠ·ΡƒΡ‡Π΅Π½ΠΈΠ΅ оптичСских свойств ΠΈΠ·Π³ΠΎΡ‚ΠΎΠ²Π»Π΅Π½Π½Ρ‹Ρ… ΠΏΠ»Ρ‘Π½ΠΎΠΊ, Ρ‚Π°ΠΊΠΈΡ… ΠΊΠ°ΠΊ Ρ‚ΠΎΠ»Ρ‰ΠΈΠ½Π°, ΠΏΠΎΠΊΠ°Π·Π°Ρ‚Π΅Π»ΡŒ прСломлСния ΠΈ тСрмооптичСский коэффициСнт, с ΠΏΠΎΠΌΠΎΡ‰ΡŒΡŽ ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠ² ΠΈΠ½Ρ‚Π΅Π³Ρ€Π°Π»ΡŒΠ½ΠΎΠΉ ΠΎΠΏΡ‚ΠΈΠΊΠΈ, ΠΈΡΠΏΠΎΠ»ΡŒΠ·ΡƒΡŽΡ‰ΠΈΡ… Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π½ΠΎΠ΅ распространСниС излучСния вдоль ΠΏΠ»Ρ‘Π½ΠΊΠΈ. ΠŸΡ€ΠΎΠ²Π΅Π΄Π΅Π½ΠΎ сравнСниС ΠΏΠ°Ρ€Π°ΠΌΠ΅Ρ‚Ρ€ΠΎΠ² ΠΈΠ·Π³ΠΎΡ‚ΠΎΠ²Π»Π΅Π½Π½Ρ‹Ρ… ΠΏΠ»Ρ‘Π½ΠΎΠΊ золь-гСль ΠΈ гСль ΠΌΠ΅Ρ‚ΠΎΠ΄Π°ΠΌΠΈ. УстановлСно, Ρ‡Ρ‚ΠΎ ΠΏΠΎΡ€Ρ‹ Π² ΠΏΠ»Ρ‘Π½ΠΊΠ°Ρ…, ΠΈΠ·Π³ΠΎΡ‚ΠΎΠ²Π»Π΅Π½Π½Ρ‹Ρ… гСль-ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠΌ, содСрТат мСньшСС количСство Π²ΠΎΠ΄Ρ‹ ΠΈ поэтому ΠΎΠ±Π»Π°Π΄Π°ΡŽΡ‚ большСй ΠΏΠ»ΠΎΡ‚Π½ΠΎΡΡ‚ΡŒΡŽ. ΠŸΠΎΠΊΠ°Π·Π°Ρ‚Π΅Π»ΡŒ прСломлСния гСль-ΠΏΠ»Ρ‘Π½ΠΎΠΊ Π±Ρ‹Π» ΠΎΠΏΡ€Π΅Π΄Π΅Π»Ρ‘Π½ ΠΏΠΎ рСзонансному ΡƒΠ³Π»Ρƒ возбуТдСния Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π°, рассчитан с ΠΏΠΎΠΌΠΎΡ‰ΡŒΡŽ диспСрсионных ΡƒΡ€Π°Π²Π½Π΅Π½ΠΈΠΉ оптичСского Π²ΠΎΠ»Π½ΠΎΠ²ΠΎΠ΄Π° ΠΈ составил 2,1-2,4. Π­Ρ‚ΠΎ Π·Π½Π°Ρ‡Π΅Π½ΠΈΠ΅ Π²Ρ‹ΡˆΠ΅, Ρ‡Π΅ΠΌ Π² случаС золь-гСль-Ρ‚Π΅Ρ…Π½ΠΎΠ»ΠΎΠ³ΠΈΠΈ получСния Ρ‚ΠΎΠ½ΠΊΠΈΡ… ΠΏΠ»Ρ‘Π½ΠΎΠΊ (1,5-1,8). По спСктрам пропускания ΠΈ отраТСния, ΠΏΠΎΠ»ΡƒΡ‡Π΅Π½Π½Ρ‹Ρ… с ΠΏΠΎΠΌΠΎΡ‰ΡŒΡŽ спСктрофотомСтра, Π±Ρ‹Π»ΠΎ установлСно Π½Π°Π»ΠΈΡ‡ΠΈΠ΅ Π°Π½ΠΈΠ·ΠΎΡ‚Ρ€ΠΎΠΏΠΈΠΈ Π² ΠΏΠ»Ρ‘Π½ΠΊΠ°Ρ…, ΠΈΠ·Π³ΠΎΡ‚ΠΎΠ²Π»Π΅Π½Π½Ρ‹Ρ… ΠΏΡ€ΠΈ ΠΎΠΏΡ€Π΅Π΄Π΅Π»Ρ‘Π½Π½Ρ‹Ρ… ΠΏΠ°Ρ€Π°ΠΌΠ΅Ρ‚Ρ€Π°Ρ… тСхнологичСского Ρ€Π΅ΠΆΠΈΠΌΠ°. УстановлСно, Ρ‡Ρ‚ΠΎ Π½Π°Π»ΠΈΡ‡ΠΈΠ΅ Π°Π½ΠΈΠ·ΠΎΡ‚Ρ€ΠΎΠΏΠΈΠΈ связано со структурой ΠΏΠ»Ρ‘Π½ΠΊΠΈ Π² Π²ΠΈΠ΄Π΅ Π»ΠΈΠ½Π΅ΠΉΠ½ΠΎΠ³ΠΎ ΠΎΠ»ΠΈΠ³ΠΎΠΌΠ΅Ρ€Π°. Π‘Ρ‚Ρ€ΠΎΠ΅Π½ΠΈΠ΅ ΠΈ морфология гСль ΠΏΠ»Ρ‘Π½ΠΎΠΊ Π±Ρ‹Π»Π° исслСдована ΠΌΠ΅Ρ‚ΠΎΠ΄Π°ΠΌΠΈ элСктронной микроскопии. Показано, Ρ‡Ρ‚ΠΎ ΠΏΠΎΠ»ΡƒΡ‡Π΅Π½Π½Ρ‹Π΅ ΠΏΠ»Ρ‘Π½ΠΊΠΈ ΠΈΠΌΠ΅ΡŽΡ‚ ΠΏΠΎΡ€ΠΈΡΡ‚ΡƒΡŽ структуру, Ρ‡Ρ‚ΠΎ допускаСт Π»Π΅Π³ΠΈΡ€ΠΎΠ²Π°Π½ΠΈΠ΅ ΠΈΡ… вСщСствами, ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡŽΡ‰ΠΈΠΌΠΈ ΡΠΎΠ·Π΄Π°Π²Π°Ρ‚ΡŒ элСмСнты ΠΈΠ½Ρ‚Π΅Π³Ρ€Π°Π»ΡŒΠ½ΠΎΠΉ ΠΎΠΏΡ‚ΠΈΠΊΠΈ, Ρ‚Π°ΠΊΠΈΠ΅ ΠΊΠ°ΠΊ Π»Π°Π·Π΅Ρ€Ρ‹, усилитСли ΠΈ Π΄Ρ€

    Integrated optical devices based on sol - Gel waveguides using the temperature dependence of the effective refractive index

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    A possibility of designing optical waveguide devices based on sol - gel SiO2 - TiO2 films using the temperature dependence of the effective refractive index is shown. The dependences of the device characteristics on the parameters of the film and opticalsystem elements are analysed. The operation of a temperature recorder and a temperature limiter with a resolution of 0.6 K mm-1 is demonstrated. The film and output-prism parameters are optimised. Β© 2014 Kvantovaya Elektronika and Turpion Ltd

    Integrated optical devices based on sol–gel waveguides using the temperature dependence of the effective refractive index

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    A possibility of designing optical waveguide devices based on sol - gel SiO2 - TiO2 films using the temperature dependence of the effective refractive index is shown. The dependences of the device characteristics on the parameters of the film and opticalsystem elements are analysed. The operation of a temperature recorder and a temperature limiter with a resolution of 0.6 K mm-1 is demonstrated. The film and output-prism parameters are optimised. Β© 2014 Kvantovaya Elektronika and Turpion Ltd

    Investigation of the temperature coefficient of the effective refractive index of optical sol-gel waveguides using a Peltier module

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    A method for studying the temperature dependence of the effective refractive index of optical waveguides was proposed and tested. The samples were heated using a Peltier thermo-optic module. This technique is simple and easy and improves the measurement accuracy and capabilities of temperature studies of optical waveguides and the materials from which they are made. Obtained dependences can be used to determine the thermo-optic coefficient of film materials. The method was tested on optical waveguides using SiO2-TiO2 films produced by sol-gel technology. Β© 2013 Allerton Press, Inc

    Investigation of the temperature coefficient of the effective refractive index of optical sol-gel waveguides using a Peltier module

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    A method for studying the temperature dependence of the effective refractive index of optical waveguides was proposed and tested. The samples were heated using a Peltier thermo-optic module. This technique is simple and easy and improves the measurement accuracy and capabilities of temperature studies of optical waveguides and the materials from which they are made. Obtained dependences can be used to determine the thermo-optic coefficient of film materials. The method was tested on optical waveguides using SiO2-TiO2 films produced by sol-gel technology. Β© 2013 Allerton Press, Inc

    Integrated optical devices based on sol - Gel waveguides using the temperature dependence of the effective refractive index

    No full text
    A possibility of designing optical waveguide devices based on sol - gel SiO2 - TiO2 films using the temperature dependence of the effective refractive index is shown. The dependences of the device characteristics on the parameters of the film and opticalsystem elements are analysed. The operation of a temperature recorder and a temperature limiter with a resolution of 0.6 K mm-1 is demonstrated. The film and output-prism parameters are optimised. Β© 2014 Kvantovaya Elektronika and Turpion Ltd
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