Stretchable Ultrasheer Fabrics as Semitransparent Electrodes for Wearable Light-Emitting e-Textiles with Changeable Display Patterns

Despite the development throughout human history of a wealth of textile materials and structures, the porous structures and non-planar surfaces of textiles are often viewed as problematic for the fabrication of wearable e-textiles and smart clothing. Here, we demonstrate a new textile-centric design paradigm in which we use the textile structure as an integral part of wearable device design. We coat the open framework structure of an ultrasheer knitted textile with a conformal gold film using solution-based metallization to form gold-coated ultrasheer electrodes that are highly conductive (3.6 ± 0.9 Ω/sq) and retain conductivity to 200% strain with R/R0 \u3c 2. The ultrasheer electrodes produce wearable, highly stretchable light-emitting e-textiles that function to 200% strain. Stencil printing a wax resist provides patterned electrodes for patterned light emission; furthermore, incorporating soft-contact lamination produces light-emitting textiles that exhibit, for the first time, readily changeable patterns of illumination

Protocol for fabricating electroless nickel immersion gold strain sensors on nitrile butadiene rubber gloves for wearable electronics

This protocol describes the fabrication of patterned conductive gold films on nitrile butadiene rubber (NBR) gloves for wearable strain sensors using electroless nickel immersion gold (ENIG) plating, a solution-based metallization technique. The resulting NBR/ENIG films are strain sensitive; resistance measurements of a patterned sensing array can be used to map human hand motions. This protocol also describes challenges related to the ENIG process and troubleshooting steps to achieve conformal gold films for strain sensing over a large working range. For complete details on the use and execution of this protocol, please refer to Mechael et al. (2021)

Ready-to-wear strain sensing gloves for human motion sensing

Integrating soft sensors with wearable platforms is critical for sensor-based human augmentation, yet the fabrication of wearable sensors integrated into ready-to-wear platforms remains underdeveloped. Disposable gloves are an ideal substrate for wearable sensors that map hand-specific gestures. Here, we use solution-based metallization to prepare resistive sensing arrays directly on off-the-shelf nitrile butadiene rubber (NBR) gloves. The NBR glove acts as the wearable platform while its surface roughness enhances the sensitivity of the overlying sensing array. The NBR sensors have a sheet resistance of 3.1 ± 0.6 Ω/sq and a large linear working range (two linear regions ≤70%). When stretched, the rough NBR substrate facilitates microcrack formation in the overlying metal, enabling high gauge factors (62 up to 40% strain, 246 from 45 - 70% strain) that are unprecedented for metal film sensors. We apply the sensing array to dynamically monitor gestures for gesture differentiation and robotic control

Ultrasmooth gold surfaces prepared by chemical mechanical polishing for applications in nanoscience

For over 20 years, template stripping has been the best method for preparing ultrasmooth metal surfaces for studies of nanostructures. However, the organic adhesives used in the template stripping method are incompatible with many solvents, limiting the conditions that may subsequently be used to prepare samples; in addition, the film areas that can be reliably prepared are typically limited to ∼1 cm2. In this article, we present chemical-mechanical polishing (CMP) as an adhesive-free, scalable method of preparing ultrasmooth gold surfaces. In this process, a gold film is first deposited by e-beam evaporation onto a 76-mm-diameter silicon wafer. The CMP process removes ∼4 nm of gold from the tops of the grains comprising the gold film to produce an ultrasmooth gold surface supported on the silicon wafer. We measured root-mean-square (RMS) roughness values using atomic force microscopy of 12 randomly sampled 1 μm × 1 μm areas on the surface of the wafer and repeated the process on 5 different CMP wafers. The average RMS roughness was 3.8 ± 0.5 Å, which is comparable to measured values for template-stripped gold (3.7 ± 0.5 Å). We also compared the use of CMP and template-stripped gold as bottom electrical contacts in molecular electronic junctions formed from n-alkanethiolate self-assembled monolayers as a sensitive test bed to detect differences in the topography of the gold surfaces. We demonstrate that these substrates produce statistically indistinguishable values for the tunneling decay coefficient β, which is highly sensitive to the gold surface topography

Conducting materials as building blocks for electronic textiles

Abstract: To realize the full gamut of functions that are envisaged for electronic textiles (e-textiles) a range of semiconducting, conducting and electrochemically active materials are needed. This article will discuss how metals, conducting polymers, carbon nanotubes, and two-dimensional (2D) materials, including graphene and MXenes, can be used in concert to create e-textile materials, from fibers and yarns to patterned fabrics. Many of the most promising architectures utilize several classes of materials (e.g., elastic fibers composed of a conducting material and a stretchable polymer, or textile devices constructed with conducting polymers or 2D materials and metal electrodes). While an increasing number of materials and devices display a promising degree of wash and wear resistance, sustainability aspects of e-textiles will require greater attention. Graphical abstract: [Figure not available: see fulltext.]

Odd-even effects in charge transport across n-alkanethiolate-based SAMs

This paper compares rates of charge transport across self-assembled monolayers (SAMs) of n-alkanethiolates having odd and even numbers of carbon atoms (nodd and neven) using junctions with the structure MTS/SAM//Ga2O3/EGaIn (M = Au or Ag). Measurements of current density, J(V), across SAMs of n-alkanethiolates on AuTS and AgTS demonstrated a statistically significant odd-even effect on AuTS, but not on AgTS, that could be detected using this technique. Statistical analysis showed the values of tunneling current density across SAMs of n-alkanethiolates on AuTS with nodd and neven belonging to two separate sets, and while there is a significant difference between the values of injection current density, J0, for these two series (log|J0Au,even| = 4.0 ± 0.3 and log|J0Au,odd| = 4.5 ± 0.3), the values of tunneling decay constant, β, for nodd and neven alkyl chains are indistinguishable (βAu,even = 0.73 ± 0.02 Å-1, and βAu,odd= 0.74 ± 0.02 Å-1). A comparison of electrical characteristics across junctions of n-alkanethiolate SAMs on gold and silver electrodes yields indistinguishable values of β and J0 and indicates that a change that substantially alters the tilt angle of the alkyl chain (and, therefore, the thickness of the SAM) has no influence on the injection current density across SAMs of n-alkanethiolates

Odd–Even Effects in Charge Transport across n -Alkanethiolate-Based SAMs

This paper compares rates of charge transport across self-assembled monolayers (SAMs) of n-alkanethiolates having odd and even numbers of carbon atoms (nodd and neven) using junctions with the structure MTS/SAM//Ga2O3/EGaIn (M = Au or Ag). Measurements of current density, J(V), across SAMs of n-alkanethiolates on AuTS and AgTS demonstrated a statistically significant odd–even effect on AuTS, but not on AgTS, that could be detected using this technique. Statistical analysis showed the values of tunneling current density across SAMs of n-alkanethiolates on AuTS with nodd and neven belonging to two separate sets, and while there is a significant difference between the values of injection current density, J0, for these two series (log|J0Au,even| = 4.0 ± 0.3 and log|J0Au,odd| = 4.5 ± 0.3), the values of tunneling decay constant, β, for nodd and neven alkyl chains are indistinguishable (βAu,even = 0.73 ± 0.02 Å–1, and βAu,odd= 0.74 ± 0.02 Å–1). A comparison of electrical characteristics across junctions of n-alkanethiolate SAMs on gold and silver electrodes yields indistinguishable values of β and J0 and indicates that a change that substantially alters the tilt angle of the alkyl chain (and, therefore, the thickness of the SAM) has no influence on the injection current density across SAMs of n-alkanethiolates.Chemistry and Chemical Biolog

The 2021 flexible and printed electronics roadmap

This roadmap includes the perspectives and visions of leading researchers in the key areas of flexible and printable electronics. The covered topics are broadly organized by the device technologies (sections 1–9), fabrication techniques (sections 10–12), and design and modeling approaches (sections 13 and 14) essential to the future development of new applications leveraging flexible electronics (FE). The interdisciplinary nature of this field involves everything from fundamental scientific discoveries to engineering challenges; from design and synthesis of new materials via novel device design to modelling and digital manufacturing of integrated systems. As such, this roadmap aims to serve as a resource on the current status and future challenges in the areas covered by the roadmap and to highlight the breadth and wide-ranging opportunities made available by FE technologies