Urban wireless traffic evolution: the role of new devices and the effect of policy

The emergence of new wireless technologies, such as the Internet of Things, allows digitalizing new and diverse urban activities. Thus, wireless traffic grows in volume and complexity, making prediction, investment planning, and regulation increasingly difficult. This article characterizes urban wireless traffic evolution, supporting operators to drive mobile network evolution and policymakers to increase national and local competitiveness. We propose a holistic method that widens previous research scope, including new devices and the effect of policy from multiple government levels. We provide an analytical formulation that combines existing complementary methods on traffic evolution research and diverse data sources. Results for a centric area of Helsinki during 2020-2030 indicate that daily volumes increase, albeit a surprisingly large part of the traffic continues to be generated by smartphones. Machine traffic gains importance, driven by surveillance video cameras and connected cars. While camera traffic is sensitive to law enforcement policies and data regulation, car traffic is less affected by transport electrification policy. High-priority traffic remains small, even under encouraging autonomous vehicle policies. We suggest that 5G small cells might be needed around 2025, albeit the utilization of novel radio technology and additional mid-band spectrum could delay this need until 2029. We argue that mobile network operators inevitably need to cooperate in constructing a single, shared small cell network to mitigate the high deployment costs of massively deploying small cells. We also provide guidance to local and national policymakers for IoT-enabled competitive gains via the mitigation of five bottlenecks. For example, local monopolies for mmWave connectivity should be facilitated on space-limited urban furniture or risk an eventual capacity crunch, slowing down digitalization

Measurement and Control of Single Nitrogen-Vacancy Center Spins above 600 K

We study the spin and orbital dynamics of single nitrogen-vacancy (NV) centers in diamond between room temperature and 700 K. We find that the ability to optically address and coherently control single spins above room temperature is limited by nonradiative processes that quench the NV center's fluorescence-based spin readout between 550 and 700 K. Combined with electronic structure calculations, our measurements indicate that the energy difference between the 3E and 1A1 electronic states is approximately 0.8 eV. We also demonstrate that the inhomogeneous spin lifetime (T2*) is temperature independent up to at least 625 K, suggesting that single NV centers could be applied as nanoscale thermometers over a broad temperature range.Comment: 8 pages, 5 figures, and 14 pages of supplemental material with additional figures. Title change and minor revisions from previous version. DMT and DJC contributed equally to this wor

Resonance fluorescence from an artificial atom in squeezed vacuum

We present an experimental realization of resonance fluorescence in squeezed vacuum. We strongly couple microwave-frequency squeezed light to a superconducting artificial atom and detect the resulting fluorescence with high resolution enabled by a broadband traveling-wave parametric amplifier. We investigate the fluorescence spectra in the weak and strong driving regimes, observing up to 3.1 dB of reduction of the fluorescence linewidth below the ordinary vacuum level and a dramatic dependence of the Mollow triplet spectrum on the relative phase of the driving and squeezed vacuum fields. Our results are in excellent agreement with predictions for spectra produced by a two-level atom in squeezed vacuum [Phys. Rev. Lett. \textbf{58}, 2539-2542 (1987)], demonstrating that resonance fluorescence offers a resource-efficient means to characterize squeezing in cryogenic environments

Engineering shallow spins in diamond with nitrogen delta-doping

We demonstrate nanometer-precision depth control of nitrogen-vacancy (NV) center creation near the surface of synthetic diamond using an in situ nitrogen delta-doping technique during plasma-enhanced chemical vapor deposition. Despite their proximity to the surface, doped NV centers with depths (d) ranging from 5 - 100 nm display long spin coherence times, T2 > 100 \mus at d = 5 nm and T2 > 600 \mus at d \geq 50 nm. The consistently long spin coherence observed in such shallow NV centers enables applications such as atomic-scale external spin sensing and hybrid quantum architectures.Comment: 14 pages, 4 figures, 11 pages of additional supplementary materia