Cryogenic electron beam induced chemical etching

© 2014 American Chemical Society. Cryogenic cooling is used to enable efficient, gas-mediated electron beam induced etching (EBIE) in cases where the etch rate is negligible at room and elevated substrate temperatures. The process is demonstrated using nitrogen trifluoride (NF3) as the etch precursor, and Si, SiO2, SiC, and Si3N4 as the materials volatilized by an electron beam. Cryogenic cooling broadens the range of precursors that can be used for EBIE, and enables high-resolution, deterministic etching of materials that are volatilized spontaneously by conventional etch precursors as demonstrated here by NF3 and XeF2 EBIE of silicon

Are complex systems hard to evolve?

Evolutionary complexity is here measured by the number of trials/evaluations needed for evolving a logical gate in a non-linear medium. Behavioural complexity of the gates evolved is characterised in terms of cellular automata behaviour. We speculate that hierarchies of behavioural and evolutionary complexities are isomorphic up to some degree, subject to substrate specificity of evolution and the spectrum of evolution parameters

Electron beam induced etching of carbon

© 2015 AIP Publishing LLC. Nanopatterning of graphene and diamond by low energy (≤ 30keV) electrons has previously been attributed to mechanisms that include atomic displacements caused by knock-on, electron beam heating, sputtering by ionized gas molecules, and chemical etching driven by a number of gases that include N2. Here, we show that a number of these mechanisms are insignificant, and the nanopatterning process can instead be explained by etching caused by electron induced dissociation of residual H2O molecules. Our results have significant practical implications for gas-mediated electron beam nanopatterning techniques and help elucidate the underlying mechanisms

Subtractive 3d printing of optically active diamond structures

Controlled fabrication of semiconductor nanostructures is an essential step in engineering of high performance photonic and optoelectronic devices. Diamond in particular has recently attracted considerable attention as a promising platform for quantum technologies, photonics and high resolution sensing applications. Here we demonstrate the fabrication of optically active, functional diamond structures using gas-mediated electron beam induced etching (EBIE). The technique achieves dry chemical etching at room temperature through the dissociation of surface-adsorbed H2O molecules by energetic electrons in a water vapor environment. Parallel processing is possible by electron flood exposure and the use of an etch mask, while high resolution, mask-free, iterative editing is demonstrated by direct write etching of inclined facets of diamond microparticles. The realized structures demonstrate the potential of EBIE for the fabrication of optically active structures in diamond

Dynamic surface site activation: A rate limiting process in electron beam induced etching

We report a new mechanism that limits the rate of electron beam induced etching (EBIE). Typically, the etch rate is assumed to scale directly with the precursor adsorbate dissociation rate. Here, we show that this is a special case, and that the rate can instead be limited by the concentration of active sites at the surface. Novel etch kinetics are expected if surface sites are activated during EBIE, and observed experimentally using the electron sensitive material ultra nanocrystalline diamond (UNCD). In practice, etch kinetics are of interest because they affect resolution, throughput, proximity effects, and the topography of nanostructures and nanostructured devices fabricated by EBIE. © 2013 American Chemical Society

The Emperor\u27s New Clothes: A Survey of Significant Court Decisions Interpreting Pennsylvania\u27s Sovereign Immunity Act and Its Waivers

This article surveys and analyzes the history of sovereign immunity in the Commonwealth of Pennsylvania. The article traces the adoption of sovereign immunity, its abrogation by the Pennsylvania Supreme Court, and the General Assembly\u27s reaffirmation of the doctrine in the Sovereign Immunity Act. The article provides a review of the important sections of the Sovereign Immunity Act and examines many of the appellate decisions which have addressed the Act and the waivers of immunity contained therein

Electron beam controlled restructuring of luminescence centers in polycrystalline diamond

Color centers in diamond are becoming prime candidates for applications in photonics and sensing. In this work we study the time evolution of cathodoluminescence (CL) emissions from color centers in a polycrystalline diamond film under electron irradiation. We demonstrate room-temperature activation of several luminescence centers through a thermal mechanism that is catalyzed by an electron beam. CL activation kinetics were measured in realtime and are discussed in the context of electron induced dehydrogenation of nitrogen-vacancy-hydrogen clusters and dislocation defects. Our results also show that (unintentional) electron beam induced chemical etching can take place during CL analysis of diamond. The etching is caused by residual H2O molecules present in high vacuum CL systems. © 2014 American Chemical Society

Localized chemical switching of the charge state of nitrogen-vacancy luminescence centers in diamond

We present a direct-write chemical technique for controlling the charge state of near-surface nitrogen vacancy centers (NVs) in diamond by surface fluorination. Fluorination of H-terminated diamond is realized by electron beam stimulated desorption of H2O in the presence of NF3 and verified with environmental photoyield spectroscopy (EPYS) and photoluminescence (PL) spectroscopy. PL spectra of shallow NVs in H- and F-terminated nanodiamonds show the expected dependence of the NV charge state on their energetic position with respect to the Fermi-level. EPYS reveals a corresponding difference between the ionization potential of H- and F-terminated diamond. The electron beam fluorination process is highly localized and can be used to fluorinate H-terminated diamond, and to increase the population of negatively charged NV centers. © 2014 AIP Publishing LLC

Dynamic Pattern Formation in Electron-Beam-Induced Etching

© 2015 American Physical Society. We report highly ordered topographic patterns that form on the surface of diamond, span multiple length scales, and have a symmetry controlled by the precursor gas species used in electron-beam-induced etching (EBIE). The pattern formation dynamics reveals an etch rate anisotropy and an electron energy transfer pathway that is overlooked by existing EBIE models. We, therefore, modify established theory such that it explains our results and remains universally applicable to EBIE. The patterns can be exploited in controlled wetting, optical structuring, and other emerging applications that require nano- and microscale surface texturing of a wide band-gap material