Near-zero negative real permittivity in far ultraviolet: extending plasmonics and photonics with B1-MoNx

CMOS-compatible, refractory conductors are emerging as the materials that will advance novel concepts into real, practical plasmonic technologies. From the available pallet of materials, those with negative real permittivity at very short wavelengths are extremely rare; importantly, they are vulnerable to oxidation—upon exposure to far-UV radiation—and nonrefractory. Epitaxial, substoichiometric, cubic MoN (B1-MoNx) films exhibit resistivity as low as 250 μΩ cm and negative real permittivity for experimental wavelengths as short as 155 nm, accompanied with unparalleled chemical and thermal stabilities, which are reported herein. Finite-difference time domain calculations suggest that B1-MoNx operates as an active plasmonic element deeper in the UV (100–200 nm) than any other known material, apart from Al, while being by far more stable and abundant than any other UV plasmonic conductor. Unexpectedly, the unique optical performance of B1-MoNx is promoted by nitrogen vacancies, thus changing the common perception on the role of defects in plasmonic materials

Core-Shell Percolative Nanodielectric for High Voltage Integrated Capacitors

International audienceHigh-k dielectric nanocomposites are promising materials to miniaturize integrated capacitors. In this work, we investigate core-shell Metal Polymer Composites (MPC) having nanoparticles (carbon-coated nickel, Ni@C) dispersed in a polymer matrix (Polystyrene). A three-step formulation (desagglomeration, surface functionalization and dispersion in a polymeric matrix) was used with simple sonochemical methods. The original core-shell structure of the MPC results of the grafting of a thin second polymer layer on the carbon coating. Finally, films of MPC were deposited on silicon wafers by spincoating and Metal-Insulator-Metal (MIM) capacitors were fabricated. The dielectric response was investigated by using broadband dielectric spectroscopy.Preliminary results show that below the percolation threshold, MPC with a core-shell structure exhibits twice the dielectric constant of the polymer with similar losses that is encouraging for the future (higher dielectric constant, similar loss)

Core-Shell Percolative Nanodielectric for High Voltage Integrated Capacitors

International audienceHigh-k dielectric nanocomposites are promising materials to miniaturize integrated capacitors. In this work, we investigate core-shell Metal Polymer Composites (MPC) having nanoparticles (carbon-coated nickel, Ni@C) dispersed in a polymer matrix (Polystyrene). A three-step formulation (desagglomeration, surface functionalization and dispersion in a polymeric matrix) was used with simple sonochemical methods. The original core-shell structure of the MPC results of the grafting of a thin second polymer layer on the carbon coating. Finally, films of MPC were deposited on silicon wafers by spincoating and Metal-Insulator-Metal (MIM) capacitors were fabricated. The dielectric response was investigated by using broadband dielectric spectroscopy.Preliminary results show that below the percolation threshold, MPC with a core-shell structure exhibits twice the dielectric constant of the polymer with similar losses that is encouraging for the future (higher dielectric constant, similar loss)

Core-shell percolative nanodielectric for high voltage integrated capacitors: comparative study on different metal carbon coated (Co, Ni & Cu) inclusions

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Superior dielectric properties of epoxy-based photoresist thin film nanocomposites with carbon-coated Cu@C nanoparticles

International audienceThe microelectronics community has shown great interest for high-k percolative nanodielectric materials for their applications as integrated capacitors. This work highlights the manufacturing process of high-quality Metal Polymer Nanocomposites (MPCs) thin dielectric films with Cu@C nanoparticles into SU8™ negative photolithographic resist. Four capacitor formulations from 0.8%vol up to 3.0%vol of Cu@C functionalized with an insulating layer of Polystyrene Pyreneterminated (PyrPS) were produced. These films, with a targeted thickness of 15 µm, were spincoated onto p-doped silicon wafers. Raman spectroscopy demonstrated the nature of the carbon shell of the nanoparticles and its effectiveness in protecting the core from oxidation, while SEM-EDS highlighted the uniformity of the nanoparticle distribution in the resist. Broadband dielectric spectroscopy measured an enhancement of to 124 with reasonable losses of 0.65 at 5 kHz for the (Cu@C)-PyrPS//SU8 3.0%vol nanocomposite. Through the use of Percolation Theory (PT) it was estimated the percolation threshold in the vicinity of 3.2%vol. Furthermore, no electrical aging or dielectric breakdown was detected at low voltage. All the results show the potential use of Cu@C nanoparticles to achieve a high-quality high-k MPC photoresists for the implementation as integrated capacitors

Thin film of magnetic nanocomposites with zero effective conductivity for RF applications

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Magnetic films of metal-graphene-polymer nanocomposites

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Thin film of magnetic nanocomposites with zero effective conductivity for RF applications

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On the Fly Ellipsometry Imaging for Process Deviation Detection

International audienceSpectroscopic ellipsometry is a very sensitive optical metrology technique commonly used in semiconductor manufacturing lines to accurately measure the thickness and refractive index of different layers present on specific dedicated metrology targets on the wafers. In parallel, optical defectivity techniques are widely implemented in production lines to inspect a significant amount of dies representative of the full wafer and detect physical and patterning defects. A new approach can then simply emerge which is to apply ellipsometry metrology techniques at a full or die wafer scale. This strategy, at the frontier between metrology and defectivity field is expected to bring solutions for certain types of process deviation. In our case, ellipsometry's optical response was collected on large areas of product wafers to capture specific deviations such as film properties, thickness, and patterning variation. This is an innovative strategy that relies on a model-less approach to detect process drifts, using ellipsometry's sensitivity to material properties and design architecture variations. In this paper, we will present this approach on three industrial cases