Scanning probe oxidation of SiC, fabrication possibilities and kinetics considerations

The following article appeared in Applied Physics Letters 103.16 (2013): 163109 and may be found at http://scitation.aip.org/content/aip/journal/apl/103/16/10.1063/1.4825265We report the outcome of atomic force microscopy local anodic oxidation experiments on 6H-SiC in air. Oxide thickness can be easily tuned by varying applied voltage and pulse duration. The height and the aspect ratio of single dots produced by single DC pulses are remarkably higher than what was reported previously, with self limiting heights exceeding 100 nm. We propose that the diminished density and the change in chemical composition of the oxide grown on SiC with respect to oxide grown under similar condition on Si cause a drop in the activation energy of oxanions diffusion within the newly formed oxide layer.This work was entirely supported by the Italian Institute of Technology (IIT

Desarrollo de un microscopio de fuerzas atómicas de no contacto en ultra-alto vacío y baja temperatura: Aplicación a superficies de grafeno/Pt(111)

Tesis doctoral inédita leída en la Universidad Autónoma de Madrid, Facultad de Ciencias, Departamento de Física de la Materia Condensada. Fecha de lectura: 03-12-201