Spin Drift in Highly Doped n-type Si

A quantitative estimation of spin drift velocity in highly doped n-type silicon (Si) at 8 K is presented in this letter. A local two-terminal Hanle measurement enables the detection of a modulation of spin signals from the Si as a function of an external electric field, and this modulation is analyzed by using a spin drift-diffusion equation and an analytical solution of the Hanle-type spin precession. The analyses reveal that the spin drift velocity is linearly proportional to the electric field. The contribution of the spin drift effect to the spin signals is crosschecked by introducing a modified nonlocal four-terminal method.Comment: 16 pages, 3 figure

Room-Temperature Electron Spin Transport in a Highly Doped Si Channel

We report on the first demonstration of generating a spin current and spin transport in a highly doped Si channel at room temperature (RT) using a four-terminal lateral device with a spin injector and a detector consisting of an Fe/MgO tunnel barrier. Spin current was generated using a nonlocal technique, and spin injection signals and Hanle-type spin precession were successfully detected at 300 K, thus proving spin injection with the elimination of spurious signals. The spin diffusion length and its lifetime at RT were estimated to be 0.6 \"im and 1.3 ns by the Hanle-type spin precession, respectively.Comment: 14 pages, 4 Figure

A novel inhibitory mechanism of MRTF-A/B on the ICAM-1 gene expression in vascular endothelial cells

The roles of myocardin-related transcription factor A (MRTF-A) and MRTF-B in vascular endothelial cells are not completely understood. Here, we found a novel regulatory mechanism for MRTF-A/B function. MRTF-A/B tend to accumulate in the nucleus in arterial endothelial cells in vivo and human aortic endothelial cells (HAoECs) in vitro. In HAoECs, nuclear localization of MRTF-A/B was not significantly affected by Y27632 or latrunculin B, primarily due to the reduced binding of MRTF-A/B to G-actin and in part, to the low level of MRTF-A phosphorylation by ERK. MRTF-A/B downregulation by serum depletion or transfection of siRNA against MRTF-A and/or MRTF-B induced ICAM-1 expression in HAoECs. It is known that nuclear import of nuclear factor-kappa B (NF-kappa B) plays a key role in ICAM-1 gene transcription. However, nuclear accumulation of NF-kappa B p65 was not observed in MRTF-A/B-depleted HAoECs. Our present findings suggest that MRTF-A/B inhibit ICAM-1 mRNA expression by forming a complex with NF-kappa B p65 in the nucleus. Conversely, downregulation of MRTF-A/B alleviates this negative regulation without further translocation of NF-kappa B p65 into the nucleus. These results reveal the novel roles of MRTF-A/B in the homeostasis of vascular endothelium

The effect of spin drift on spin accumulation voltages in highly-doped Si

An investigation was carried out into the effect of spin drift on spin accumulation signals in highly-doped Si using non-local 4-terminal (NL-4T) and 3-terminal (NL-3T) methods. The spin signals in the NL-4T scheme were not affected by spin drift, and the bias dependence was governed by whether spins were injected into or extracted from the Si channel. In contrast, the spin signal was strongly modulated by the bias electric field in the NL-3T scheme. The bias electric field dependence of the spin signals in the NL-3T method was quantitatively clarified using the spin drift-diffusion equation, and the results can be reasonably explained.Comment: 14 pages, 3 figure

Elastic properties of the Non-Fermi liquid metal CeRu4Sb12Ce Ru_4 Sb_{12} and the Dense Kondo semiconductor CeOs4Sb12Ce Os_4 Sb_{12}

We have investigated the elastic properties of the Ce-based filled skutterudite antimonides CeRu$_{4}$Sb$_{12}$ and CeOs$_{4}$Sb$_{12}$ by means of ultrasonic measurements. CeRu$_{4}$Sb$_{12}$ shows a slight increase around 130 K in the temperature dependence of the elastic constants $C$$_{11}$, ($C$$_{11}$-$C$$_{12}$)/2 and $C$$_{44}$. No apparent softening toward low temperature due to a quadrupolar response of the 4$f$-electronic ground state of the Ce ion was observed at low temperatures. In contrast CeOs$_{4}$Sb$_{12}$ shows a pronounced elastic softening toward low temperature in the longitudinal $C$$_{11}$ as a function of temperature ($T$) below about 15 K, while a slight elastic softening was observed in the transverse $C$$_{44}$ below about 1.5 K. Furthermore, CeOs$_{4}$Sb$_{12}$ shows a steep decrease around a phase transition temperature of 0.9 K in both $C$$_{11}$ and$C$$_{44}$. The elastic softening observed in $C$$_{11}$ below about 15 K cannot be explained reasonably only by the crystalline electric field effect. It is most likely to be responsible for the coupling between the elastic strain and the quasiparticle band with a small energy gap in the vicinity of Fermi level. The elastic properties and the 4$f$ ground state of Ce ions in CeRu$_{4}$Sb$_{12}$ and CeOs$_{4}$Sb$_{12}$ are discussed from the viewpoint of the crystalline electric field effect and the band structure in the vicinity of Fermi level.Comment: 9 pages, 11 figures, regular pape

An investigation of the inverted Hanle effect in highly-doped Si

The underlying physics of the inverted Hanle effect appearing in Si was experimentally investigated using a Si spin valve, where spin transport was realized up to room temperature. No inverted-Hanle-related signal was observed in a non-local 4-terminal scheme even the same ferromagnetic electrode was used, whereas the signal was detected in a non-local 3-terminal scheme. Although the origin of the inverted Hanle effect has been thought to be ascribed to interfacial roughness beneath a ferromagnetic electrode, our finding is inconsistent with the conventional interpretation. More importantly, we report that there were two different Hanle signals in a non-local 3-terminal scheme, one of which corresponds to the inverted Hanle signal but the other is ascribed to spin transport. These results strongly suggest that (1) there is room for discussion concerning the origin of the inverted Hanle effect, and (2) achievement of spin transport in a non-local 4-terminal scheme is indispensable for further understanding of spin injection, spin transport and spin coherence in Si. Our new findings provide a new and strong platform for arising discussion of the physical essence of Hanle-related spin phenomena.Comment: 16 pages, 3 figures (To appear in Physical Review B (Rapid Communications)

Electrical Spin Injection into Silicon using MgO Tunnel Barrier

We observed spin injection into silicon through Fe/MgO tunnel barrier by using non-local magnetoresistance measurement technique. Fe/MgO tunnel barrier contacts with a lateral spin valve structure were fabricated on phosphorous doped silicon-on-insulator substrate. Spin injection signals in the non-local scheme were observed up to 120K, which is the highest value where band transferred spins in Si have ever been reported, and spin diffusion length was estimated to be about 2.25um at 8K. Temperature dependence and injection current dependence of the non-local voltage were also investigated. It is clarified that MgO tunnel barrier is effective for the spin injection into silicon.Comment: 15pages, 4 figures. To appear in Applied Physics Expres