Eg versus x relation from photoluminescence and electron microprobe investigations in p-type Hg1−xCdxTe (0.35 =< x =< 0.7)

Combined photoluminescence (at 10 T 300 K) and electron microprobe investigations have been carried out with HgCdTe samples grown from the melt or from solution. By exciting the samples through metallic masks with 200 μm diameter holes fixed with respect to the sample care was taken to pick-up both characteristic X-ray radiation as well as the photoluminescence from the same sample area. The Eg versus x relation determined in this way at T = 30 K has been compared with data from the interband absorption edge by other authors

Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage

The early stages of catastrophic optical damage (COD) in 808 nm emitting diode lasers are mapped by simultaneously monitoring the optical emission with a 1 ns time resolution and deriving the device temperature from thermal images. COD occurs in highly localized damage regions on a 30 to 400 ns time scale which is determined by the accumulation of excess energy absorbed from the optical output. We identify regimes in which COD is avoided by the proper choice of operation parameters

Spectroscopic signatures of a bandwidth-controlled Mott transition at the surface of 1T-TaSe2_2

High-resolution angle-resolved photoemission (ARPES) data show that a metal-insulator Mott transition occurs at the surface of the quasi-two dimensional compound TaSe$_2$. The transition is driven by the narrowing of the Ta $5d$ band induced by a temperature-dependent modulation of the atomic positions. A dynamical mean-field theory calculation of the spectral function of the half-filled Hubbard model captures the main qualitative feature of the data, namely the rapid transfer of spectral weight from the observed quasiparticle peak at the Fermi surface to the Hubbard bands, as the correlation gap opens up.Comment: 4 pages, 4 figures; one modified figure, added referenc

Two-dimensional carrier density distribution inside a high power tapered laser diode

The spontaneous emission of a GaAs-based tapered laser diode emitting at lambda = 1060 nm was measured through a window in the transparent substrate in order to study the carrier density distribution inside the device. It is shown that the tapered geometry is responsible for nonuniform amplification of the spontaneous/stimulated emission which in turn influences the spatial distribution of the carriers starting from below threshold. The carrier density does not clamp at the lasing threshold and above it the device shows lateral spatial hole-burning caused by high stimulated emission along the cavity center. (C) 2011 American Institute of Physics. (doi: 10.1063/1.3596445

Manejo da colheita de canola com dessecação e corte-enleiramento combinados a adesionante.

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