Insulating Phases Induced by Crossing of Partially Filled Landau Levels in a Si Quantum Well

We study magnetotransport in a high mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau level crossing process for noninteger filling factors. Together with a Hall resistivity change which exhibits the particle-hole symmetry, this indicates that electrons or holes in the relevant Landau levels become localized at the coincidence where the pseudospin-unpolarized state is expected to be stable.Comment: 4 pages, 4 figure

Well-width dependence of valley splitting in Si/SiGe quantum wells

The valley splitting in Si two-dimensional electron systems is studied using Si/SiGe single quantum wells (QWs) with different well widths. The energy gaps for 4 and 5.3 nm QWs, obtained from the temperature dependence of the longitudinal resistivity at the Landau level filling factor $\nu=1$, are much larger than those for 10 and 20 nm QWs. This is consistent with the well-width dependence of the bare valley splitting estimated from the comparison with the Zeeman splitting in the Shubnikov-de Haas oscillations.Comment: 3 pages, 2 figure

Room-Temperature Electron Spin Transport in a Highly Doped Si Channel

We report on the first demonstration of generating a spin current and spin transport in a highly doped Si channel at room temperature (RT) using a four-terminal lateral device with a spin injector and a detector consisting of an Fe/MgO tunnel barrier. Spin current was generated using a nonlocal technique, and spin injection signals and Hanle-type spin precession were successfully detected at 300 K, thus proving spin injection with the elimination of spurious signals. The spin diffusion length and its lifetime at RT were estimated to be 0.6 \"im and 1.3 ns by the Hanle-type spin precession, respectively.Comment: 14 pages, 4 Figure

Metallic Behavior of Cyclotron Relaxation Time in Two-Dimensional Systems

Cyclotron resonance of two-dimensional electrons is studied at low temperatures down to 0.4 K for a high-mobility Si/SiGe quantum well which exhibits a metallic temperature dependence of dc resistivity $\rho$. The relaxation time $\tau_{\rm CR}$ shows a negative temperature dependence, which is similar to that of the transport scattering time $\tau_t$ obtained from $\rho$. The ratio $\tau_{\rm CR}/\tau_t$ at 0.4 K increases as the electron density $N_s$ decreases, and exceeds unity when $N_s$ approaches the critical density for the metal-insulator transition.Comment: 4 pages, 3 figure

Spin Drift in Highly Doped n-type Si

A quantitative estimation of spin drift velocity in highly doped n-type silicon (Si) at 8 K is presented in this letter. A local two-terminal Hanle measurement enables the detection of a modulation of spin signals from the Si as a function of an external electric field, and this modulation is analyzed by using a spin drift-diffusion equation and an analytical solution of the Hanle-type spin precession. The analyses reveal that the spin drift velocity is linearly proportional to the electric field. The contribution of the spin drift effect to the spin signals is crosschecked by introducing a modified nonlocal four-terminal method.Comment: 16 pages, 3 figure

Remarks on the relativistic Hartree equations

We study the global well-posedness (GWP) and small data scattering of radial solutions of the relativistic Hartree type equations with nonlocal nonlinearity F(u) = ¸(j ¢ j¡° ¤ juj2)u, ¸ 2 R n f0g, 0 < ° < n, n ¸ 3. We establish a weighted L2 Strichartz estimate applicable to non-radial functions and some fractional integral estimates for radial functions

Clustering Properties of Low-Luminosity Star-Forming galaxies at z = 0.24 and 0.40 in the Subaru Deep Field

We present our analysis on the clustering properties of star-forming galaxies selected by narrow-band excesses in the Subaru Deep Field. Specifically we focus on Halpha emitting galaxies at z = 0.24 and z = 0.40 in the same field, to investigate possible evolutionary signatures of clustering properties of star-forming galaxies. Based on the analysis on 228 Halpha emitting galaxies with 39.8 < log L(Halpha) < 40.8 at z = 0.40, we find that their two-point correlation function is estimated as xi = (r/1.62^{+0.64}_{-0.50} Mpc)^{-1.84 +/- 0.08}. This is similar to that of Halpha emitting galaxies in the same Halpha luminosity range at z = 0.24, xi = (r/1.88^{+0.60}_{-0.49} Mpc)^{-1.89 +/- 0.07}. These correlation lengths are smaller than those for the brighter galaxy sample studied by Meneux et al. (2006) in the same redshift range. The evolution of correlation length between z = 0.24 and z = 0.40 is interpreted by the gravitational growth of the dark matter halos.Comment: 16 pages, 7 figures, PASJ, Vol.60, No.6, in pres

An Intermediate-band imaging survey for high-redshift Lyman Alpha Emitters: The Mahoroba-11

We present results of our intermediate-band optical imaging survey for high-$z$ Ly$\alpha$ emitters (LAEs) using the prime focus camera, Suprime-Cam, on the 8.2m Subaru Telescope. In our survey, we use eleven filters; four broad-band filters ($B$, $R_{\rm c}$, $i^\prime$, and $z^\prime$) and seven intermediate-band filters covering from 500 nm to 720 nm; we call this imaging program as the Mahoroba-11. The seven intermediate-band filters are selected from the IA filter series that is the Suprime-Cam intermediate-band filter system whose spectral resolution is $R = 23$. Our survey has been made in a $34^\prime \times 27^\prime$ sky area in the Subaru XMM Newton Deep Survey field. We have found 409 IA-excess objects that provide us a large photometric sample of strong emission-line objects. Applying the photometric redshift method to this sample, we obtained a new sample of 198 LAE candidates at $3 < z < 5$. We found that there is no evidence for evolution of the number density and the star formation rate density for LAEs with $\log L({\rm Ly}\alpha) ({\rm erg s^{-1}}) > 42.67$ between $z \sim 3$ and 5.Comment: 46 pages, 15 figures, PASJ, Vol.57, No.6, in pres