Influence of the preliminary annealing conditions on step motion at the homoepitaxy on the Si(100) surface

In this paper, the motion of steps SA and SB on the Si(100) surface in the process of Si Molecular beam epitaxy (MBE) is explored. The study was carried out by means of the reflection intensity dependence behavior analysis of reflection high-energy electron diffraction (RHEED) corresponding to the (2×1) and (1×2) reconstructions. Superstructural rearrangement from a two-domain to a single-domain surface is associated with the bilayer step formation, which occurs due to the different motion rates of the steps SA and SB. Based on the research conducted, the conditions under which the step doubling occurs were determined. A behavior analysis of the diffraction reflection intensity dependences showed that an increasing of preliminary annealing time and temperature facilitates to the faster convergence of the steps SA and SB, but to the slower recovery of the initial surface. The presented experimental results indicate that step movement rate difference depends on the step A edge kink density

Omecamtiv mecarbil in chronic heart failure with reduced ejection fraction, GALACTIC‐HF: baseline characteristics and comparison with contemporary clinical trials

Aims: The safety and efficacy of the novel selective cardiac myosin activator, omecamtiv mecarbil, in patients with heart failure with reduced ejection fraction (HFrEF) is tested in the Global Approach to Lowering Adverse Cardiac outcomes Through Improving Contractility in Heart Failure (GALACTIC‐HF) trial. Here we describe the baseline characteristics of participants in GALACTIC‐HF and how these compare with other contemporary trials. Methods and Results: Adults with established HFrEF, New York Heart Association functional class (NYHA) ≥ II, EF ≤35%, elevated natriuretic peptides and either current hospitalization for HF or history of hospitalization/ emergency department visit for HF within a year were randomized to either placebo or omecamtiv mecarbil (pharmacokinetic‐guided dosing: 25, 37.5 or 50 mg bid). 8256 patients [male (79%), non‐white (22%), mean age 65 years] were enrolled with a mean EF 27%, ischemic etiology in 54%, NYHA II 53% and III/IV 47%, and median NT‐proBNP 1971 pg/mL. HF therapies at baseline were among the most effectively employed in contemporary HF trials. GALACTIC‐HF randomized patients representative of recent HF registries and trials with substantial numbers of patients also having characteristics understudied in previous trials including more from North America (n = 1386), enrolled as inpatients (n = 2084), systolic blood pressure < 100 mmHg (n = 1127), estimated glomerular filtration rate < 30 mL/min/1.73 m2 (n = 528), and treated with sacubitril‐valsartan at baseline (n = 1594). Conclusions: GALACTIC‐HF enrolled a well‐treated, high‐risk population from both inpatient and outpatient settings, which will provide a definitive evaluation of the efficacy and safety of this novel therapy, as well as informing its potential future implementation

Formation of SnO and SnO2 phases during the annealing of SnO(x) films obtained by molecular beam epitaxy

SnO and SnO2 films were obtained on the SiO2 surface by the molecular-beam epitaxy method. The initial film

Morphology, structure, and optical properties of semiconductor films with GeSiSn nanoislands and strained layers

The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn content from 0 to 16% at the growth temperature of 150 °С have been obtained. The phase diagrams of the superstructure change during the epitaxial growth of Sn on Si and on Ge(100) have been built. Using the phase diagram data, it becomes possible to identify the Sn cover on the Si surface and to control the Sn segregation on the superstructure observed on the reflection high-energy electron diffraction (RHEED) pattern. The multilayer structures with the GeSiSn pseudomorphic layers and island array of a density up to 1.8 × 1012 cm−2 have been grown with the considering of the Sn segregation suppression by the decrease of GeSiSn and Si growth temperature. The double-domain (10 × 1) superstructure related to the presence of Sn on the surface was first observed in the multilayer periodic structures during Si growth on the GeSiSn layer. The periodical GeSiSn/Si structures demonstrated the photoluminescence in the range of 0.6–0.85 eV corresponding to the wavelength range of 1.45–2 μm. The calculation of the band diagram for the structure with the pseudomorphic Ge0.315Si0.65Sn0.035 layers allows assuming that photoluminescence peaks correspond to the interband transitions between the X valley in Si or the Δ4-valley in GeSiSn and the subband of heavy holes in the GeSiSn layer

Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures

This work deals with elastically strained GeSiSn films and GeSiSn islands. The kinetic diagram of GeSiSn growth for different lattice mismatches between GeSiSn and Si has been drawn. The multilayered periodic structures with pseudomorphic GeSiSn layers and GeSiSn island arrays have been obtained. The density of the islands in the GeSiSn layer is 1.8 · 1012 cm-2 for an average island size of 4 nm. Analysis of the rocking curves has shown that the structures contain smooth heterointerfaces, and no abrupt changes of composition and thickness between periods have been found. Photoluminescence has been demonstrated and calculation of band diagram with the model-solid theory has been carried out. Luminescence presented for sample with pseudomorphic Ge0.315Si0.65Sn0.035 layers in the narrow range 0.71–0.82 eV is observed with the maximum intensity near 0.78 eV corresponding to 1.59 µm wavelength. Based on the band diagram calculation for Si/Ge0.315Si0.65Sn0.035/Si heterocomposition we have concluded that 0.78 eV photon energy luminescence corresponds to interband transitions between the X-valley in Si and the heavy hole subband in the Ge0.315Si0.65Sn0.035 layer

Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism

Structures with tin-rich island arrays on silicon pedestals were obtained by molecular beam epitaxy using Sn as a catalyst for the growth of nanostructures. A tin island array was used further to study the growth of nanostructures in the process of Si deposition on the surface with Sn islands. It was established that, during the growth on the vapor-liquid-crystal mechanism, tin-rich islands are formed on faceted pedestals. A nanostructured cellular surface was formed between the islands on pedestals. The analysis of the elemental composition of the obtained nanostructures was performed by the methods of energy dispersive X-ray spectroscopy and photoelectron spectroscopy. It is shown that tin-rich islands can contain up to 90% tin, whereas the pedestal consists of silicon. The transmission electron microscopy data demonstrated a distinct crystal structure of tin-rich islands and silicon pedestals, as well as the absence of dislocations in the structures with island arrays on the faceted pedestals. The facet tilt angle is 19° and corresponds to the (311) plane. The photoluminescence signal was observed with a photoluminescence maximum near the wavelength of 1.55 μm

Effect of annealing temperature on the morphology, structure, and optical properties of nanostructured SnO(x) films

Fabrication and characterization of titanium dioxide (TiO2) thin film on Al/TiO2/SiO2/p-Si MIS structure for the study of morphology, optical and electrical properties were reported. A transparent and high crystallinity of TiO2 thin films were prepared at room temperature (~25 °C) by sol–gel route. TiO2 sol suspension were prepared at molar ratio of TTIP:EtOH:AA = 2:15:1 using titanium tetra-isopropoxide (TTIP) and a mixture of absolute ethanol (EtOH) and acetic acid (AA) which used as a precursor and catalyst for the peptization, respectively. The TiO2 thin films were deposited on a thermally grown SiO2 layer of p-type silicon (100) substrates and were thermally treated at different annealing temperatures of 300, 500, 700 and 900 °C. For study of optical properties, the TiO2 thin films were deposited on a glass slides substrate and were annealed from 200 to 700 °C. The XRD results show that the presence of an amorphous TiO2 phases were transformed into the polycrystalline (anatase or rutile) with good crystallinity after treated at higher annealing temperatures. Besides, the surface roughness of TiO2 thin films increased with increasing annealing temperatures. In addition, the resistivity of the thin films decreased from 2.5751E+8 to 6.714E+7 Ω cm with the increasing temperatures. Moreover, the optical absorbance of TiO2 thin films exhibited high UV–visible light absorption with band gap energy shifted to the higher wavelength (low energy photons). The band gap energy (Eg) of the films decreased from 3.79 to 3.16 eV and from 3.95 to 3.75 eV significantly for direct band allowed and indirect band allowed, respectively, with the increasing annealing temperatures

Triazoles and Strobilurin Mixture Affects Soil Microbial Community and Incidences of Wheat Diseases

Pesticides are widely used in agriculture as a pest control strategy. Despite the benefits of pesticides on crop yields, the persistence of chemical residues in soil has an unintended impact on non-targeted microorganisms. In the present study, we evaluated the potential adverse effects of a mixture of fungicides (difenoconazole, epoxiconazole, and kresoxim-methyl) on soil fungal and bacterial communities, as well as the manifestation of wheat diseases. In the fungicide-treated soil, the Shannon indices of both fungal and bacterial communities decreased, whereas the Chao1 indices did not differ compared to the control soil. Among bacterial taxa, the relative abundances of Arthrobacter and Sphingomonas increased in fungicide-treated soil due to their ability to utilize fungicides and other toxic compounds. Rhizopus and plant-beneficial Chaetomium were the dominant fungal genera, with their prevalence increasing by 2–4 times in the fungicide-treated soil. The genus Fusarium, which includes phytopathogenic species, which are notably responsible for root rot, was the most abundant taxon in each of the two conditions but its relative abundance was two times lower in fungicide-treated soils, consistent with a lower level of disease incidence in plants. The prediction of metabolic pathways revealed that the soil bacterial community had a high potential for degrading various pollutants, and the soil fungal community was in a state of recovery after the application of quinone outside inhibitor (QoI) fungicides. Fungicide-treated soil was characterized by an increase in soil microbial carbon, compared with the control soil. Collectively, the obtained results suggest that the application of difenoconazole, epoxiconazole, and kresoxim-methyl is an effective approach for pest control that does not pose a hazard for the soil ecosystem in the short term. However, it is necessary to carry out additional sampling to take into account the spatio-temporal impact of this fungicide mixture on the functional properties of the soil