Correlation between surface reconstruction and polytypism in InAs nanowire selective area epitaxy

Themechanism of widely observed intermixing of wurtzite and zinc-blende crystal structures in InAs nanowire (NW) grown by selective area epitaxy (SAE) is studied. We demonstrate that the crystal structure in InAs NW grown by SAE can be controlled using basic growth parameters, and wurtzitelike InAs NWs are achieved.We link the polytypic InAs NWs SAE to the reconstruction of the growth front (111)B surface. Surface reconstruction study of InAs (111) substrate and the following homoepitaxy experiment suggest that (111) planar defect nucleation is related to the (1 × 1) reconstruction of InAs (111)B surface. In order to reveal it more clearly, a model is presented to correlate growth temperature and arsenic partial pressure with InAs NW crystal structure. This model considers the transition between (1 × 1) and (2 × 2) surface reconstructions in the frame of adatom atoms adsorption/desorption, and the polytypism is thus linked to reconstruction quantitatively. The experimental data fit well with the model, which highly suggests that surface reconstruction plays an important role in the polytypism phenomenon in InAs NWs SAE.https://doi.org/10.1103/PhysRevMaterials.1.074603Peer Reviewe

Polarity control in WSe2 double-gate transistors

As scaling of conventional silicon-based electronics is reaching its ultimate limit, considerable effort has been devoted to find new materials and new device concepts that could ultimately outperform standard silicon transistors. In this perspective two-dimensional transition metal dichalcogenides, such as MoS2 and WSe2, have recently attracted considerable interest thanks to their electrical properties. Here, we report the first experimental demonstration of a doping-free, polarity-controllable device fabricated on few-layer WSe2. We show how modulation of the Schottky barriers at drain and source by a separate gate, named program gate, can enable the selection of the carriers injected in the channel, and achieved controllable polarity behaviour with ON/OFF current ratios >106 for both electrons and holes conduction. Polarity-controlled WSe2 transistors enable the design of compact logic gates, leading to higher computational densities in 2D-flatronics

Design and Benchmarking of Hybrid CMOS-Spin Wave Device Circuits Compared to 10nm CMOS

In this paper, we present a design and benchmarking methodology of Spin Wave Device (SWD) circuits based on micromagnetic modeling. SWD technology is compared against a 10nm FinFET CMOS technology, considering the key metrics of area, delay and power. We show that SWD circuits outperform the 10nm CMOS FinFET equivalents by a large margin. The area-delay-power product (ADPP) of SWD is smaller than CMOS for all benchmarks from 2.5× to 800×. On average, the area of SWD circuits is 3.5× smaller and the power consumption is two orders of magnitude lower compared to the 10nm CMOS reference circuits

A surface potential based compact model for two-dimensional field effect transistors with disorders induced transition behaviors

10.1063/1.5040908Journal of Applied Physics1243034302-1 - 034302-80021-897

A Stretchable‐Hybrid Low‐Power Monolithic ECG Patch with Microfluidic Liquid‐Metal Interconnects and Stretchable Carbon‐Black Nanocomposite Electrodes for Wearable Heart Monitoring

10.1002/aelm.20180046352180046

A 7×7×2 mm3 8.6μW 500kb/s Transmitter with Robust Injection-Locking Based Frequency-to-Amplitude Conversion Receiver Targeting for Implantable Applications

10.1109/JSSC.2019.2961855Journal of Solid State Circuits5561698 - 170

A statistical Seebeck coefficient model based on percolation theory in two-dimensional disordered systems

10.1063/1.5098862Journal of Applied Physics12522430

A Physics-Based Compact Model for Transition-Metal Dichalcogenides Transistors With the Band-Tail Effect

10.1109/LED.2018.2820142IEEE Electron Device Letters395761-76

Self‐Powered Cursor Using a Triboelectric Mechanism

10.1002/smtd.201800078Small Methods218000782366-960

Liquid-Metal-Elastomer Foam for Moldable Multi-Functional Triboelectric Energy Harvesting and Force Sensing

10.3390/ma12091458MDPI Materials129145