Localised tuneable composition single crystal silicon-germanium-on-insulator for low cost devices

The realisation of high quality silicon-germanium-on-insulator (SGOI) is a major goal for the field of silicon photonics because it has the potential to enable extremely low power active devices functioning at the communication wavelengths of 1.3 µm and 1.55 µm. In addition, SGOI has the potential to form faster electronic devices such as BiCMOS transistors, and could also form the backbone of a new silicon photonics platform that extends into the mid-IR wavelengths for applications in, amongst others, sensing and telecoms. In this paper, we present a novel method of forming single crystal, defect free SGOI using a rapid melt growth technique. We use tailored structures to form localised uniform composition SGOI strips, which are suitable for state of the art device fabrication. This technique could pave the way for the seamless integration of electronic and photonic devices using only a single, low cost Ge deposition step

Silicon Photonic Waveguides and Devices for Near- and Mid-IR Applications

Silicon photonics has been a very buoyant research field in the last several years mainly because of its potential for telecom and datacom applications. However, prospects of using silicon photonics for sensing in the mid-IR have also attracted interest lately. In this paper, we present our recent results on waveguide-based devices for near- and mid-infrared applications. The silicon-on-insulator platform can be used for wavelengths up to 4 μm; therefore, different solutions are needed for longer wavelengths. We show results on passive Si devices such as couplers, filters, and multiplexers, particularly for extended wavelength regions and finally present integration of photonics and electronics integrated circuits for high-speed applications

Dataset for Athermal silicon nitride angled MMI wavelength division (de)multiplexers for the near-infrared

Data supporting the paper Dominguez Bucio, Thalia, Khokhar, Ali, Mashanovich, G and Gardes, F (2017) Athermal silicon nitride angled MMI wavelength division (de)multiplexers for the near-infrared. Optics Express.</span

Dataset for N-Rich Silicon Nitride Angled-MMI for coarse wavelength division (de)multiplexing in the O-band

Data supporting the paper Dominguez Bucio, Thalia, Khokhar, Ali, Mashanovich, G and Gardes, F (2018) N-Rich Silicon Nitride Angled-MMI for coarse wavelength division (de)multiplexing in the O-band. Optics Letters.</span

Education and training of silicon photonics engineers and technicians

At the University of Southampton, we have established an educational photonics pathway in which we teach our undergraduate and postgraduate students the fundamentals of silicon photonics. We have designed silicon photonics laboratories, for both simulation and characterization, where our students have opportunities to design their chips and characterize them. Our assessment strategy aims to improve students’ self-assessment and feedback skills. The material we have developed is also being used for training our technicians and PhD students

Dataset supporting the publication &quot;Mechanical dicing of optical quality facets and waveguides in a Silicon Nitride platform&quot;.

Dataset supporting the publication &quot;Mechanical dicing of optical quality facets and waveguides in a Silicon Nitride platform&quot;. This dataset supports the publication: AUTHORS: Paul C Gow, Glenn M Churchill, Valerio Vitali, Thalia Dominguez Bucio, Frederic Y Gardes, Matthew P. D&rsquo;Souza, Periklis Petropoulos, Corin B E Gawith and James C Gates TITLE: Mechanical dicing of optical quality facets and waveguides in a Silicon Nitride platform. JOURNAL: Electronics Letters PAPER DOI IF KNOWN: 10.1049/ell2.13138 This zipped dataset contains: &quot;NCM_3_FAST_Topography_Forward 5.0x5.0&quot; TIFF file of the topography of one of the machined Silicon Nitride facets measured using a Park Systems Atomis Force Microscope. &quot;SirichSiN_300nmThickness_TOPWaveguide_TotalTransmissionLosses_meas1&quot; Microsoft Excel file containing two tabs. &quot;Overview&quot; shows general information of the spectrum analyser used. &quot;IL&quot; shows wavelength data in column A, and Loss data in Column B.</span

Bi-Layer grating couplers for hybrid SixNy- Si3N4 photonics with sub- decibel coupling efficiency

Over the last twenty years, the research on silicon nitride has had a tremendous impact on the development of chip-scale nonlinear photonics, comb generation and related applications such as sensing, metrology, quantum technologies and communications [1], [2]. The low refractive index contrast between silicon nitride (Si3N4,n=2.00 at 1550 nm) and the silica cladding (SiO2,n=1.44 at 1550 nm), compared to the typical case of silicon waveguides (Si, n=3.48 at 1550 nm), enables achieving extremely low propagation losses and better tolerances in the fabrication process. However, the smaller index contrast makes the design and realization of efficient grating couplers (GCs), which are commonly used to couple light from and to an out-of-plane optical fibre, more difficult than in the case of Silicon-on-Insulator (SOI) devices

Dataset supporting the publication &quot;Highly Efficient Dual-Level Grating Couplers for Silicon Nitride Photonics&quot;

Dataset supporting the publication &quot;Highly Efficient Dual-Level Grating Couplers for Silicon Nitride Photonics&quot; by V Vitali, C Lacava, T Dom&iacute;nguez Bucio, F Y. Gardes &amp; P Petropoulos, published in Scientific Reports (https://doi.org/10.1038/s41598-022-19352-9) This dataset contains: data_figures.xlsx: this file is an excel file with different tabs. In each tab it is possible to find the data that have been used to generate each plot of the article, with the corresponding &quot;X axis&quot; data, &quot;Y axis&quot; data and, if present, &quot;Z axis&quot; data for contour plots. Each tab is named accordingly to the respective figure in the article.</span