Electroluminescence excitation mechanisms in an epoxy resin under divergent and uniform field

Electroluminescence excitation mechanisms have been investigated in epoxy resin under divergent and uniform field situations. Metallic wires embedded in the resin were used to produce field divergence whereas film samples were metallised to obtain a uniform field. Electroluminescence under divergent field was stimulated by an impulse voltage. Light was emitted on the positive and negative fronts of the square pulses when the field exceeded 20 kV/mm at the wire surface, with equal intensity and without polarity dependence. There was evidence of space charge accumulation around the wires in multiple-pulse experiments. Charge injection and extraction occurring at both fronts of the pulse provide the condition for EL excitation. Further excitation of the EL during the plateau of the voltage pulse is prevented by the opposite field of the trapped charge. Field computation with and without space charge supports the proposed interpretation. A DC voltage was used for the uniform field experiments. A continuous level of electroluminescence is found at 175 kV/mm. Charging/discharging current measurements and space charge profile analyses using the pulsed electro-acoustic (PEA) technique were performed at different fields up to the EL level. Dipolar orientation generates a long lasting transient current that prevents the conduction level being reached within the experimental protocol (one hour poling time). The continuous EL emission is nevertheless associated with a regime where the conduction becomes dominant over the orientational polarization. Polarization and space charge contribute to the PEA charge profiles. Homo-charge injection at anode and cathode is seen at 20 kV/mm and a penetration of positive space charge in the bulk is detected above 100 kV/mm, suggesting an excitation of the continuous EL by bipolar charge recombination

Space charge induced luminescence in epoxy resin

Dielectric breakdown of epoxies is preceded by a light emission from the solid state material, so-called electroluminescence. Very little is known however on the luminescence properties of epoxy. The aim of this paper is to derive information that can be used as a basis to understand the nature of the excited states and their involvement in electrical degradation processes

The relationship between charge distribution, charge packet formation and electroluminescence in XLPE under DC

Different reports describing the internal distribution of space charge in cross-linked polyethylene (XLPE) under DC field have been published recently. The most striking fact observed is the organization of the space charge into charge packets that cross the insulation. All models for charge packet formation imply that carrier recombination will occur. As the recombination region is potentially a luminescence one it is of interest to record the electroluminescence in this regime. This topic is addressed in this paper

Characterizing HV XLPE cables by electrical, chemical and microstructural measurements on cable peeling: Effects of surface roughness, thermal treatment and peeling location

Characterization of the electrical, chemical, and microstructural properties of high voltage cables was the first step of the European project “ARTEMIS”, which has the aim of investigating degradation processes and constructing aging models for the diagnosis of cross-linked polyethylene (XLPE) cables. Cables produced by two different manufacturers were subjected to a large number of electrical, microstructural, and chemical characterizations, using cable peelings, instead of lengths of whole cables, as specimens for the measurements. Here the effect of surface deformation and roughness due to peeling and the relevance and significance of thermal pre-treatment prior to electrical and other measurements is discussed. Special emphasis is put on space charge, conduction current and luminescence measurements. We also consider the dependence of these properties on the spatial position of the specimen within the cable. It is shown that even though the two faces of the cable peel specimens have different roughness, the low-field electrical properties seem quite insensitive to surface roughness, while significant differences are detectable at high fields. Thermal pre-treatment is required to stabilize the insulating material to enable us to obtain reproducible results and reliable inter-comparisons throughout the whole project. The spatial position of the specimens along the cable radius can also have a non-negligible influence on the measured properties, due to differential microstructure and chemical composition

Methodology for extraction of space charge density profiles at nanoscale from Kelvin probe force microscopy measurements

International audienceTo understand the physical phenomena occurring at metal/dielectric interfaces, determination of the charge density profile at nanoscale is crucial. To deal with this issue, charges were injected applying a DC voltage on lateral Al-electrodes embedded in a SiN x thin dielectric layer. The surface potential induced by the injected charges was probed by Kelvin probe force microscopy (KPFM). It was found that the KPFM frequency mode is a better adapted method to probe accurately the charge profile. To extract the charge density profile from the surface potential two numerical approaches based on the solution to Poisson's equation for electrostatics were investigated: the second derivative model method, already reported in the literature, and a new 2D method based on the finite element method (FEM). Results highlight that the FEM is more robust to noise or artifacts in the case of a non-flat initial surface potential. Moreover, according to theoretical study the FEM appears to be a good candidate for determining charge density in dielectric films with thicknesses in the range from 10 nm to 10 μm. By applying this method, the charge density profile was determined at nanoscale, highlighting that the charge cloud remains close to the interface

Interface tailoring for charge injection mitigation in insulators: Different principles and achievements

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Handling Geometric Features in Nanoscale Characterization of Charge Injection and Transport in thin Dielectric Films

International audienceDue to miniaturization and attractiveness of nanosized and/or nanostructured dielectric layers, characterization at the local scale of charge injection and transport phenomena comes to the fore. To that end the electric modes derived from Atomic Force Microscopy (AFM) are more and more frequently used. In this study, the influence of AFM tip-plane system configuration on the electric field distribution is investigated for homogeneous and heterogeneous (nanostructured) thin dielectric layers. The experimental and computing results reveal that the radial component of the electric field conveys the charge lateral spreading whereas the axial component of the electric field governs the amount of injected charges. The electric field distribution is slightly influenced by the heterogeneity of the material. Moreover, the interpretation of the current measurements requires consideration of the entire electric field distribution and not only the computed field at the contact point

Characterization of the Electrical Behaviour of Thin Dielectric Films at Nanoscale using Methods Derived from Atomic Force Microscopy: Application to Plasma Deposited AgNPs-Based Nanocomposites

International audienceRecent advances in the development of micro-and nano-devices call for applications of thin nanocomposite dielectric films (thickness less than few tens of nanometers) with tuneable electrical properties. For optimization purposes, their behaviour under electrical stress needs to be probed at relevant scale, i.e. nanoscale. To that end electrical modes derived from Atomic Force Microscopy (AFM) appear the best methods due to their nanoscale resolution and non-destructive nature which permits in-situ characterization. The potentialities of electrical modes derived from AFM are presented in this work. The samples under study consist of plasma processed thin dielectric silica layers with embedded silver nanoparticles (AgNPs). Charge injection at local scale, performed by using AFM tip, is investigated by Kelvin Probe Force Microscopy (KPFM). Modulation of the local permittivity induced by the presence of AgNPs is assessed by Electrostatic Force Microscopy (EFM)

Charge injection phenomena at the metal/dielectric interface investigated by Kelvin probe force microscopy

International audienceThe understanding of charge injection mechanism at metal/dielectric interface is crucial in many applications. A direct probe of such phenomenon requires a charge measurement method whose spatial resolution is compatible with the characteristic scale of phenomena occurring after injection, like charge trapping, and with the geometry of samples under investigation. In this paper, charge injection at metal/dielectric interface and their motion in silicon nitride layer under tunable electric field are probed at nanoscale using a technique derived from Atomic Force Microscopy. This was achieved by realizing embedded lateral electrode structures and using surface potential measurement by Kelvin Probe Force Microscopy (KPFM) to provide voltage, field and charge profiles close to the metal/dielectric interface during and after biasing the electrodes. The influence of electric field enhancement at the interface due to the electrode geometry was accounted for. Electron and hole mobility was estimated from surface potential profiles obtained under polarization. Charge dynamic was investigated during depolarization steps

Charges injection investigation at metal/dielectric interfaces by Kelvin Probe Force Microscopy

International audienceCharges injection at metal/dielectric interface and their motion in silicon nitride layer is investigated using samples with embedded lateral electrodes and surface potential measurement by Kelvin Probe Force Microscopy (KPFM). Bipolar charge injection was evidenced using this method. From surface potential profile, charge density distribution is extracted by using Poisson's equation. The evolution of the charge density profile with polarization bias and depolarization time was also investigated