Influence of ion irradiation on switching field and switching field distribution in arrays of Co/Pd-based bit pattern media

International audienceWe have used ion irradiation to tune switching field and switching field distribution ͑SFD͒ in polycrystalline Co/Pd multilayer-based bit pattern media. Light He + ion irradiation strongly decreases perpendicular magnetic anisotropy amplitude due to Co/Pd interface intermixing, while the granular structure, i.e., the crystalline anisotropy, remains unchanged. In dot arrays, the anisotropy reduction leads to a decrease in coercivity ͑H C ͒ but also to a strong broadening of the normalized SFD/ H C ͑in percentage͒, since the relative impact of misaligned grains is enhanced. Our experiment thus confirms the major role of misorientated grains in SFD of nanodevice arrays. Today a major research effort in magnetism is targeted toward achieving ultrahigh density data storage with nano-scale magnets. Spin-transfer magnetic random access memory ͑spin-RAM͒ and bit patterned media ͑BPM͒ technologies are currently part of the most promising media. The implementation of both of these technologies relies on achieving in-detail physical understanding and control of the magnetization reversal mechanism in each nanoscopic individual bit to ensure reproducibility of the bit properties in order to avoid write errors. Perpendicular magnetic anisotropy ͑PMA͒ materials, such as polycrystalline Co/Pd, Co/Pt, and Co/Ni multilayers, are believed to be promising materials for both spin-RAM and BPM applications. 1–4 Indeed, they have a well defined high amplitude uniaxial anisotropy that provides good thermal stability while offering low critical current in spin-transfer devices 2 and tunable switching fields in BPM.

Magnetic imaging of ion-irradiation patterned Co/Pt multilayers using complementary electron and photon probes

The three-dimensional magnetic structure and reversal mechanism of patterned Co/Pt multilayers, were imaged using complementary Lorentz transmission electron microscopy (LTEM) (in-plane component) and magnetic transmission x-ray microscopy (M-TXM) (perpendicular magnetization). The Co/Pt films with perpendicular anisotropy were patterned by ion irradiation through a stencil mask to produce in-plane magnetization in the irradiated regions. The boundaries of the patterns, defined by the transition from out-of-plane to in-plane magnetization, were found to be determined by the stencil mask, whilst the scale of the magnetic reversal by the physical microstructure. The nucleation fields were substantially reduced to 50 Oe for the in-plane regions and 1 kOe for the perpendicular regions, comparing to 4.5 kOe for the as-grown film. The perpendicular reversals were found to always originate at the pattern boundaries

Strategies for Controlled Placement of Nanoscale Building Blocks

The capability of placing individual nanoscale building blocks on exact substrate locations in a controlled manner is one of the key requirements to realize future electronic, optical, and magnetic devices and sensors that are composed of such blocks. This article reviews some important advances in the strategies for controlled placement of nanoscale building blocks. In particular, we will overview template assisted placement that utilizes physical, molecular, or electrostatic templates, DNA-programmed assembly, placement using dielectrophoresis, approaches for non-close-packed assembly of spherical particles, and recent development of focused placement schemes including electrostatic funneling, focused placement via molecular gradient patterns, electrodynamic focusing of charged aerosols, and others

Ion induced magnetization reorientation in Co/Pt multilayers for patterned media

Co/Pt multilayer films with perpendicular magnetic anisotropy and large out-of-plane coercivities of 3.9 - 8.5 kOe have been found to undergo a spin reorientation transition from out-of-plane to in-plane upon irradiation with 700 keV nitrogen ions. X-ray reflectivity experiments show that the multilayer structure gets progressively disrupted with increasing ion dose, providing direct evidence for local atomic displacements at the Co/Pt interfaces. This effectively destroys the magnetic interface anisotropy, which was varied by about a factor of two, between KS@ 0.4 erg/cm2 and KS@ 0.85 erg/cm2 for two particular films. The dose required to initiate spin-reorientation, 6x1014 N+/cm2 and 1.5x1015 N+/cm2, respectively, scales with KS. It is roughly equal to the number of Co interface atoms per unit interface area contributing to KS

Perforated tips for high-resolution in-plane magnetic force microscopy

We describe a technique to modify batch-fabricated magnetic force microscopy (MFM) tips to allow high resolution imaging of the in-plane components of stray field. A hole with a diameter as small as 20 nm was milled through the magnetic layer at the apex of each tip using a focused ion beam. The tips were magnetized in the direction parallel to the sample plane. The hole at the apex forms a small pole gap, and the MFM signal arises from interaction of the stray field leakage from this gap with magnetic charge distribution of the sample. Data tracks written in recording media have been used to characterize tip performance