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Synchrotron studies of top-down grown silicon nanowires
Morphology of the top-down grown silicon nanowires obtained by metal-assisted wet-chemical approach on silicon substrates with different resistance were studied by scanning electron microscopy. Obtained arrays of compact grown Si nanowires were a subject for the high resolution electronic structures studies by X-ray absorption near edge structure technique performed with the usage of high intensity synchrotron radiation of the SRC storage ring of the University of Wisconsin-Madison. The different oxidation rates were found by investigation of silicon atoms local surrounding specificity of the highly developed surface and near surface layer that is not exceeded 70β―nm. Flexibility of the wires arrays surface morphology and its composition is demonstrated allowing smoothly form necessary surface oxidation rate and using Si nanowires as a useful matrixes for a wide range of further functionalization
Studies and application of bent crystals for beam steering at 70-GeV IHEP accelerator
This report overviews studies accomplished in the U70 proton synchrotron of
IHEP-Protvino during the recent two decades. Major attention is paid to a
routine application of bent crystals for beam extraction from the machine. It
has been confirmed experimentally that efficiency of beam extraction with a
crystal deflector of around 85% is well feasible for a proton beam with
intensity up to 1012 protons per cycle. Another trend is to use bent crystals
for halo collimation in a high energy collider. New promising options emerge
for, say, LHC and ILC based on the "volume reflection" effect, which has been
discovered recently in machine study runs at U70 of IHEP (50 GeV) and SPS of
CERN (400 GeV).Comment: 12 pages, 14 figure
Investigation of energy and mass balance βTrimyx-3Mβ Galatea multipole magnetic trap
In the work using Rogowski loop, measurements of the diamagnetic current, generating in the plasma volume of the
βTrimyx-3Mβ Galatea multipole magnetic trap under its filling by plasmoids have been carried out. These
measurements are confirmed by signals from diamagnetic probes. The mean value of the energy in plasma volume in
the process of the trap filling by plasma and during plasma decay have been determined by the magnitude of
diamagnetic current. These measurements are carried out simultaneously with the measurement of the time dependence
of mean plasma density by microwave interferometer.ΠΠ° Π΄ΠΎΠΏΠΎΠΌΠΎΠ³ΠΎΡ ΠΏΠΎΡΡΡ Π ΠΎΠ³ΠΎΠ²ΡΡΠΊΠΎΠ³ΠΎ Π·Π΄ΡΠΉΡΠ½Π΅Π½ΠΎ Π²ΠΈΠΌΡΡΠΈ Π΄ΡΠ°ΠΌΠ°Π³Π½ΡΡΠ½ΠΎΠ³ΠΎ ΡΡΡΡΠΌΡ, ΡΠΎ Π²ΠΈΠ½ΠΈΠΊΠ°Ρ Π² ΠΏΠ»Π°Π·ΠΌΠΎΠ²ΠΎΠΌΡ ΠΎΠ±βΡΠΌΡ ΠΌΡΠ»ΡΡΠΈΠΏΠΎΠ»ΡΠ½ΠΎΡ ΠΌΠ°Π³Π½ΡΡΠ½ΠΎΡ ΠΏΠ°ΡΡΠΊΠΈ-ΠΠ°Π»Π°ΡΠ΅Ρ "Π’ΡΡΠΌΡΠΊΡ-3Π" ΠΏΡΠΈ Π½Π°ΠΏΠΎΠ²Π½Π΅Π½Π½Ρ ΡΡ ΠΏΠ»Π°Π·ΠΌΠΎΠ²ΠΈΠΌΠΈ Π·Π³ΡΡΡΠΊΠ°ΠΌΠΈ. Π¦Ρ Π²ΠΈΠΌΡΡΠΈ ΠΏΡΠ΄ΡΠ²Π΅ΡΠ΄ΠΆΠ΅Π½Ρ ΡΠΈΠ³Π½Π°Π»Π°ΠΌΠΈ Π· Π΄ΡΠ°ΠΌΠ°Π³Π½ΡΡΠ½ΠΈΡ
Π·ΠΎΠ½Π΄ΡΠ². ΠΠ° Π²Π΅Π»ΠΈΡΠΈΠ½ΠΎΡ Π΄ΡΠ°ΠΌΠ°Π³Π½ΡΡΠ½ΠΎΠ³ΠΎ ΡΡΡΡΠΌΡ Π²ΠΈΠ·Π½Π°ΡΠ°Π»Π°ΡΡ Π²Π΅Π»ΠΈΡΠΈΠ½Π° Π΅Π½Π΅ΡΠ³ΡΡ Π² ΠΏΠ»Π°Π·ΠΌΠΎΠ²ΠΎΠΌΡ ΠΎΠ±βΡΠΌΡ Ρ ΡΡ Π·ΠΌΡΠ½Π° Π² ΠΏΡΠΎΡΠ΅ΡΡ Π·Π°ΠΏΠΎΠ²Π½Π΅Π½Π½Ρ ΠΏΠ°ΡΡΠΊΠΈ ΠΏΠ»Π°Π·ΠΌΠΎΡ Ρ ΡΡ ΡΠΎΠ·ΠΏΠ°Π΄Ρ. ΠΠΈΠΌΡΡΠΈ ΠΏΡΠΎΠ²Π΅Π΄Π΅Π½ΠΎ ΠΎΠ΄Π½ΠΎΡΠ°ΡΠ½ΠΎ Π· Π²ΠΈΠΌΡΡΠ°ΠΌΠΈ Π·Π° Π΄ΠΎΠΏΠΎΠΌΠΎΠ³ΠΎΡ Π‘ΠΠ§-ΡΠ½ΡΠ΅ΡΡΠ΅ΡΠΎΠΌΠ΅ΡΡΠ° ΡΠ°ΡΠΎΠ²ΠΎΡ Π·Π°Π»Π΅ΠΆΠ½ΠΎΡΡΡ ΡΠ΅ΡΠ΅Π΄Π½ΡΠΎΡ ΠΊΠΎΠ½ΡΠ΅Π½ΡΡΠ°ΡΡΡ ΠΏΠ»Π°Π·ΠΌΠΈ.Π‘ ΠΏΠΎΠΌΠΎΡΡΡ ΠΏΠΎΡΡΠ° Π ΠΎΠ³ΠΎΠ²ΡΠΊΠΎΠ³ΠΎ ΠΏΡΠΎΠΈΠ·Π²Π΅Π΄Π΅Π½Ρ ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΡ Π΄ΠΈΠ°ΠΌΠ°Π³Π½ΠΈΡΠ½ΠΎΠ³ΠΎ ΡΠΎΠΊΠ°, Π²ΠΎΠ·Π½ΠΈΠΊΠ°ΡΡΠ΅Π³ΠΎ Π² ΠΏΠ»Π°Π·ΠΌΠ΅Π½Π½ΠΎΠΌ ΠΎΠ±ΡΠ΅ΠΌΠ΅ ΠΌΡΠ»ΡΡΠΈΠΏΠΎΠ»ΡΠ½ΠΎΠΉ ΠΌΠ°Π³Π½ΠΈΡΠ½ΠΎΠΉ Π»ΠΎΠ²ΡΡΠΊΠΈ-ΠΠ°Π»Π°ΡΠ΅ΠΈ Β«Π’ΡΠΈΠΌΠΈΠΊΡ-3ΠΒ» ΠΏΡΠΈ Π½Π°ΠΏΠΎΠ»Π½Π΅Π½ΠΈΠΈ Π΅Π΅ ΠΏΠ»Π°Π·ΠΌΠ΅Π½Π½ΡΠΌΠΈ ΡΠ³ΡΡΡΠΊΠ°ΠΌΠΈ. ΠΡΠΈ ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΡ ΠΏΠΎΠ΄ΡΠ²Π΅ΡΠΆΠ΄Π΅Π½Ρ ΡΠΈΠ³Π½Π°Π»Π°ΠΌΠΈ Ρ Π΄ΠΈΠ°ΠΌΠ°Π³Π½ΠΈΡΠ½ΡΡ
Π·ΠΎΠ½Π΄ΠΎΠ². ΠΠΎ Π²Π΅Π»ΠΈΡΠΈΠ½Π΅ Π΄ΠΈΠ°ΠΌΠ°Π³Π½ΠΈΡΠ½ΠΎΠ³ΠΎ ΡΠΎΠΊΠ° ΠΎΠΏΡΠ΅Π΄Π΅Π»ΡΠ»Π°ΡΡ Π²Π΅Π»ΠΈΡΠΈΠ½Π° ΡΠ½Π΅ΡΠ³ΠΈΠΈ Π² ΠΏΠ»Π°Π·ΠΌΠ΅Π½Π½ΠΎΠΌ ΠΎΠ±ΡΠ΅ΠΌΠ΅ ΠΈ Π΅Π΅ ΠΈΠ·ΠΌΠ΅Π½Π΅Π½ΠΈΠ΅ Π² ΠΏΡΠΎΡΠ΅ΡΡΠ΅ Π·Π°ΠΏΠΎΠ»Π½Π΅Π½ΠΈΡ Π»ΠΎΠ²ΡΡΠΊΠΈ ΠΏΠ»Π°Π·ΠΌΠΎΠΉ ΠΈ Π΅Ρ ΡΠ°ΡΠΏΠ°Π΄Π°. ΠΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΡ ΠΏΡΠΎΠ²Π΅Π΄Π΅Π½Ρ ΠΎΠ΄Π½ΠΎΠ²ΡΠ΅ΠΌΠ΅Π½Π½ΠΎ Ρ ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΠ΅ΠΌ Ρ ΠΏΠΎΠΌΠΎΡΡΡ Π‘ΠΠ§-ΠΈΠ½ΡΠ΅ΡΡΠ΅ΡΠΎΠΌΠ΅ΡΡΠ° Π²ΡΠ΅ΠΌΠ΅Π½Π½ΠΎΠΉ Π·Π°Π²ΠΈΡΠΈΠΌΠΎΡΡΠΈ ΡΡΠ΅Π΄Π½Π΅ΠΉ ΠΊΠΎΠ½ΡΠ΅Π½ΡΡΠ°ΡΠΈΠΈ ΠΏΠ»Π°Π·ΠΌΡ
Proton Extraction from IHEP Accelerator Using Bent Crystals
IHEP Protvino has pioneered the wide practical use of bent crystals as
optical elements in high-energy beams for beam extraction and deflection on
permanent basis since 1989. In the course of IHEP experiments, crystal
channeling has been developed into efficient instrument for particle steering
at accelerators, working in predictable, reliable manner with beams of very
high intensity over years. Crystal systems extract 70 GeV protons from IHEP
main ring with efficiency of 85% at intensity of 1.E12, basing on multi-pass
mechanism of channeling proposed theoretically and realised experimentally at
IHEP. Today, six locations on the IHEP 70-GeV main ring of the accelerator
facility are equipped by crystal extraction systems, serving mostly for routine
applications rather than for research and allowing a simultaneous run of
several particle physics experiments, thus significantly enriching the IHEP
physics program. The long successful history of large-scale crystal
exploitation at IHEP should help to incorporate channeling crystals into
accelerator systems worldwide in order to create unique systems for beam
delivery. We report recent results from the research and exploitation of
crystal extraction systems at IHEP.Comment: Invited talk at the International workshop "Relativistic Channeling
and Related Coherent Phenomena", Frascati (Rome) 23-26 March 200
Synchrotron studies of top-down grown silicon nanowires
Morphology of the top-down grown silicon nanowires obtained by metal-assisted wet-chemical approach on silicon substrates with different resistance were studied by scanning electron microscopy. Obtained arrays of compact grown Si nanowires were a subject for the high resolution electronic structures studies by X-ray absorption near edge structure technique performed with the usage of high intensity synchrotron radiation of the SRC storage ring of the University of Wisconsin-Madison. The different oxidation rates were found by investigation of silicon atoms local surrounding specificity of the highly developed surface and near surface layer that is not exceeded 70β―nm. Flexibility of the wires arrays surface morphology and its composition is demonstrated allowing smoothly form necessary surface oxidation rate and using Si nanowires as a useful matrixes for a wide range of further functionalization. Keywords: Silicon nanowires, Scanning electron microscopy, Synchrotron radiation, X-ray absorption near edge structure, Compositio