Spin polarization and barrier oxidation effects at the Co/alumina interface in magnetic tunnel junctions

Copyright © 2004 American Institute of PhysicsThe electronic structure and polarization in magnetic tunnel junctions prepared with varying degrees of barrier-layer oxidation have been studied using x-ray absorption spectroscopy across the Co L2,3 absorption edges. It was found that the Co electronic structure near the Co∕alumina interface tended to that of cobalt oxide as the barrier oxidation time was increased. However, the net Co 3d spin polarization, determined from x-ray magnetic circular dichroism, increased for moderate oxidation times compared to that obtained for an under-oxidized Co∕Al interface. It is proposed that the expected dilution of the measured polarization due to the formation of (room temperature) paramagnetic cobalt oxide, is offset by an increase in the Co 3d spin-polarization of the interface layer as the interface bonding changes from Co–Al to Co–O with increasing oxidation times

Interfacial structure and half-metallic ferromagnetism in Co2MnSi-based magnetic tunnel junctions

Copyright © 2006 The American Physical SocietyX-ray absorption (XAS) and x-ray magnetic circular dichroism (XMCD) techniques are utilized to explore the ferromagnetic/barrier interface in Co2MnSi full Heusler alloy magnetic tunnel junctions. Structural and magnetic properties of the interface region are studied as a function of the degree of site disorder in the alloy and for different degrees of barrier oxidation. Photoelectron scattering features that depend upon the degree of L2(1) ordering are observed in the XAS spectra. Additionally, the moments per 3d hole for Co and Mn atoms are found to be a sensitive function of both the degree of L2(1) ordering and the barrier oxidation state. Significantly, a multiplet structure is observed in the XMCD spectra that indicates a degree of localization of the moments and may result from the half-metallic ferromagnetism (HMF) in the alloy. The magnitude of this multiplet structure appears to vary with preparation conditions and could be utilized to ascertain the role of the constituent atoms in producing the HMF, and to examine methods for preserving the half-metallic state after barrier preparation. The changes in the magnetic structure caused by barrier oxidation could be reversed by inserting a thin Mg interface layer in order to suppress the oxidation of Mn in the Co2MnSi layer

Temperature dependence of the interface moments in Co2MnSi thin films

Copyright © 2008 American Institute of PhysicsX-ray magnetic circular dichroism (XMCD) is utilized to explore the temperature dependence of the interface moments in Co2MnSi (CMS) thin films capped with aluminum. By increasing the thickness of the capping layer, we demonstrate enhanced interface sensitivity of the measurements. L2(1)-ordered CMS films show no significant temperature dependence of either the Co or Mn interface moments. However, disordered CMS films show a decreased moment at low temperature possibly caused by increased Mn-Mn antiferromagnetic coupling. It is suggested that for ordered L2(1) CMS films the temperature dependence of the tunneling magnetoresistance is not related to changes in the interface moments

Phase-resolved x-ray ferromagnetic resonance measurements in fluorescence yield

Copyright © 2011 American Institute of PhysicsPhase-resolved x-ray ferromagnetic resonance (XFMR) has been measured in fluorescence yield, extending the application of XFMR to opaque samples on opaque substrates. Magnetization dynamics were excited in a Co50Fe50(0.7)/Ni90Fe10(5) bilayer by means of a continuous wave microwave excitation, while x-ray magnetic circular dichroism (XMCD) spectra were measured stroboscopically at different points in the precession cycle. By tuning the x-ray energy to the L-3 edges of Ni and Fe, the dependence of the real and imaginary components of the element specific magnetic susceptibility on the strength of an externally applied static bias field was determined. First results from measurements on a Co50Fe50(0.7)/Ni90Fe10(5)/Dy(1) sample confirm that enhanced damping results from the addition of the Dy cap

Biogenic metallic elements in the human brain?

The chemistry of copper and iron plays a critical role in normal brain function. A variety of enzymes and proteins containing positively charged Cu+, Cu2+, Fe2+, and Fe3+ control key processes, catalyzing oxidative metabolism and neurotransmitter and neuropeptide production. Here, we report the discovery of elemental (zero–oxidation state) metallic Cu0 accompanying ferromagnetic elemental Fe0 in the human brain. These nanoscale biometal deposits were identified within amyloid plaque cores isolated from Alzheimer’s disease subjects, using synchrotron x-ray spectromicroscopy. The surfaces of nanodeposits of metallic copper and iron are highly reactive, with distinctly different chemical and magnetic properties from their predominant oxide counterparts. The discovery of metals in their elemental form in the brain raises new questions regarding their generation and their role in neurochemistry, neurobiology, and the etiology of neurodegenerative disease

Interface modification in Co/Cu multilayers prepared by ion-assisted deposition

SIGLEAvailable from British Library Document Supply Centre-DSC:DXN025675 / BLDSC - British Library Document Supply CentreGBUnited Kingdo

A link between the coercivity and microstructure of high moment Fe films and their use in magnetic tunnel junctions

Magnetron sputtered single Fe films have been “softened” magnetically by controlled N-doping during the sputter deposition. This technique allows a reduction in grain size and coercivity of the Fe films, without decreasing the saturation magnetization and without the formation of any crystalline FeN phases. We describe this effect through a modification of the random magnetocrystalline anisotropy model, by taking the film thickness into account. The coercivities calculated in this way are in good agreement with those obtained experimentally.It is demonstrated that N-doping can be applied beneficially to control the switching field of the ‘free’ layer in magnetic trilayer films of the MTJ type. It is thus possible to construct an all Fe-electrode magnetic tunnel junction (MTJ) that displays the tunneling magnetoresistance (TMR) effect by altering the switching field of one Fe layer using N-doping. The ability to control the magnetic softness of high magnetic moment materials is important in regard to their incorporation into TMR devices

Synchrotron X-ray reflectivity study of Co/Cu multilayer structure

We report on the use of Station 2.3 at the SRS Daresbury Laboratory as a high resolution reflectivity diffractometer (HRRD) for the study of interfacial structure in a Co/Cu multilayer grown using the ion-assisted deposition method. Specular, off-specular and diffuse X-ray scattering measurements were obtained from interfaces grown with concurrent ion bombardment under selected deposition conditions. The present work has successfully demonstrated that the HRRD instrument is a viable tool for the structural study of the Co/Cu system. In addition, the reflectivity results have revealed some of the growth mechanisms involved and possible conditions for the optimisation of smooth multilayer interfaces with minimal disorder

Spin polarised neutron and X-ray reflectivity study of a Co/Cu multilayer deposited under ion bombardment

Spin polarised neutron reflectivity and X-ray reflectivity measurements were performed on a Co/Cu multilayer deposited under ion bombardment. It was found that an average ion energy of ∼200 eV caused a reduction in interface roughness towards the surface. The average moment per atom in the cobalt layers in the bulk of the film was calculated from the polarised neutron reflectivity data to be 1.48±0.12μb