28 research outputs found

    Nitrogen and vacancy clusters in ZnO

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    Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG geförderten) Allianz- bzw. Nationallizenz frei zugänglich.This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively.Understanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated on N-implanted ZnO crystals. We show that the introduction of N impurities into ZnO, irrespective of whether it is done during the growth of thin films or bulk crystals or through implantation and subsequent thermal treatments, leads to the formation of stable vacancy clusters and negative ion-type defects. Interestingly, the stability of these vacancy clusters is found almost exclusively for N introduction, whereas single Zn vacancy defects or easily removable vacancy clusters are more typically found for ZnO doped with other impurities.DFG, SFB 787, Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement

    A Transaction Cost Economizing Approach to Regulation: Understanding the NIMBY Problem and Improving Regulatory Responses

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    This paper develops a transaction cost economic model for regulation and applies the model to environmental siting regulations designed to overcome NIMBY (Not In My Back Yard) political opposition. Negotiations between developers and resistant local communities to site waste facilities, such as landfills or solid waste incinerators, can be characterized as a contracting problem. A rudimentary application of the Coase theorem suggests that developers should be able to compensate communities adequately for hosting a waste facility, but rarely do such negotiations find success. Transaction costs associated with the requisite negotiations, communication, and implementation of the projects preclude efficient bargaining, and thus NIMBY opposition halts the siting of socially necessary and beneficial facilities. Viewing NIMBY disputes as a contracting problem within the world of positive transaction costs therefore reveals the dynamics that foil negotiations between developers and communities. Such a perspective also identifies the role that the theory of the firm can play in understanding how siting regulations overcome those transaction costs and how regulatory regimes can be optimally designed for siting alternative facilities. This paper employs the theory of the firm, specifically transaction cost economics, to articulate the functional purpose of environmental siting regulations and to chart an agenda for regulatory reform. While transaction cost economics traditionally compares mechanisms such as spot markets, contracts, and direct ownership to facilitate economic transactions, we extend transaction cost theory to political transactions between policymakers and initially resistant, though potentially supportive, constituencies. We believe this approach offers a fruitful perspective on regulatory policy. We use it to develop a taxonomy of alternative regulatory regimes and then to propose an overview of regulatory reform for siting socially desirable waste facilities that are either blocked by NIMBY opposition or are unnecessarily shielded from effective negotiations and community participation

    Hydrogen in oxide semiconductors

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    Recharging behavior of nitrogen-centers in ZnO

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    Electron Paramagnetic Resonance was used to study N2-centers in ZnO, which show a 5-line spectrum described by the hyperfine interaction of two nitrogen nuclei (nuclear spin I  = 1, 99.6% abundance). The recharging of this center exhibits two steps, a weak onset at about 1.4 eV and a strongly increasing signal for photon energies above 1.9 eV. The latter energy coincides with the recharging energy of NO centers (substitutional nitrogen atoms on oxygen sites). The results indicate that the N2-centers are deep level defects and therefore not suitable to cause significant hole-conductivity at room temperature
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