Altered Innate Immune Responses in Neutrophils from Patients with Well- and Suboptimally Controlled Asthma

© 2015 Francesca S. M. Tang et al. Background. Respiratory infections are a major cause of asthma exacerbations where neutrophilic inflammation dominates and is associated with steroid refractory asthma. Structural airway cells in asthma differ from nonasthmatics; however it is unknown if neutrophils differ. We investigated neutrophil immune responses in patients who have good (AGood) and suboptimal (ASubopt) asthma symptom control. Methods. Peripheral blood neutrophils from AGood (ACQ 0.75, n=7), and healthy controls (HC) (n=9) were stimulated with bacterial (LPS (1 g/mL), fMLF (100 nM)), and viral (imiquimod (3 g/mL), R848 (1.5 g/mL), and poly I:C (10 g/mL)) surrogates or live rhinovirus (RV) 16 (MOI1). Cell-free supernatant was collected after 1 h for neutrophil elastase (NE) and matrix metalloproteinase- (MMP-) 9 measurements or after 24 h for CXCL8 release. Results. Constitutive NE was enhanced in AGood neutrophils compared to HC. fMLF stimulated neutrophils from ASubopt but not AGood produced 50% of HC levels. fMLF induced MMP-9 was impaired in ASubopt and AGood compared to HC. fMLF stimulated CXCL8 but not MMP-9 was positively correlated with FEV1 and FEV1/FVC. ASubopt and AGood responded similarly to other stimuli. Conclusions. Circulating neutrophils are different in asthma; however, this is likely to be related to airflow limitation rather than asthma control

Influence of Si doping on InAs/GaAs quantum dot solar cells with AlAs cap layers

A novel all-optical forward-viewing photoacoustic probe using a flexible coherent fibre-optic bundle and a Fabry- Perot (FP) ultrasound sensor has been developed. The fibre bundle, along with the FP sensor at its distal end, synthesizes a high density 2D array of wideband ultrasound detectors. Photoacoustic waves arriving at the sensor are spatially mapped by optically scanning the proximal end face of the bundle in 2D with a CW wavelength-tunable interrogation laser. 3D images are formed from the detected signals using a time-reversal image reconstruction algorithm. The system has been characterized in terms of its PSF, noise-equivalent pressure and field of view. Finally, the high resolution 3D imaging capability has been demonstrated using arbitrary shaped phantoms and duck embryo

Si-Doped InAs/GaAs Quantum-Dot Solar Cell With AlAs Cap Layers

One of the requirements for strong subbandgap photon absorption in the quantum-dot intermediate-band solar cell (QD-IBSC) is the partial filling of the intermediate band. Studies have shown that the partial filling of the intermediate band can be achieved by introducing Si doping to the QDs. However, the existence of too many Si dopants leads to the formation of point defects and, hence, a reduction of photocurrent. In this study, the effect of Si doping on InAs/GaAs QD solar cells with AlAs cap layers is studied. The AlAs cap layers prevent the formation of the wetting layer during QD growth and reduce the Si doping density needed to achieve QD state filling. Furthermore, the passivation of defect states in the QD with moderate Si doping is demonstrated, which leads to an enhancement of the carrier lifetime in the QDs and, hence, the open-circuit voltage

From on-road to off : transfer learning within a deep convolutional neural network for segmentation and classification of off-road scenes.

Real-time road-scene understanding is a challenging computer vision task with recent advances in convolutional neural networks (CNN) achieving results that notably surpass prior traditional feature driven approaches. Here, we take an existing CNN architecture, pre-trained for urban road-scene understanding, and retrain it towards the task of classifying off-road scenes, assessing the network performance within the training cycle. Within the paradigm of transfer learning we analyse the effects on CNN classification, by training and assessing varying levels of prior training on varying sub-sets of our off-road training data. For each of these configurations, we evaluate the network at multiple points during its training cycle, allowing us to analyse in depth exactly how the training process is affected by these variations. Finally, we compare this CNN to a more traditional approach using a feature-driven Support Vector Machine (SVM) classifier and demonstrate state-of-the-art results in this particularly challenging problem of off-road scene understanding

Distribution system planning by Tabu search approach

2000-2001 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

A perspective from extinct radionuclides on a Young Stellar Object: The Sun and its accretion disk

Meteorites, which are remnants of solar system formation, provide a direct glimpse into the dynamics and evolution of a young stellar object (YSO), namely our Sun. Much of our knowledge about the astrophysical context of the birth of the Sun, the chronology of planetary growth from micrometer-sized dust to terrestrial planets, and the activity of the young Sun comes from the study of extinct radionuclides such as 26Al (t1/2 = 0.717 Myr). Here we review how the signatures of extinct radionuclides (short-lived isotopes that were present when the solar system formed and that have now decayed below detection level) in planetary materials influence the current paradigm of solar system formation. Particular attention is given to tying meteorite measurements to remote astronomical observations of YSOs and modeling efforts. Some extinct radionuclides were inherited from the long-term chemical evolution of the Galaxy, others were injected into the solar system by a nearby supernova, and some were produced by particle irradiation from the T-Tauri Sun. The chronology inferred from extinct radionuclides reveals that dust agglomeration to form centimeter-sized particles in the inner part of the disk was very rapid (<50 kyr), planetesimal formation started early and spanned several million years, planetary embryos (possibly like Mars) were formed in a few million years, and terrestrial planets (like Earth) completed their growths several tens of million years after the birth of the Sun.Comment: 49 pages, 9 figures, 1 table. Uncorrected preprin

InAs/GaAs quantum-dot superluminescent light-emitting diode monolithically grown on a Si substrate

Building optoelectronic devices on a Si platform has been the engine behind the development of Si photonics. In particular, the integration of optical interconnects onto Si substrates allows the fabrication of complex optoelectronic circuits, potentially enabling chip-to-chip and system-to-system optical communications at greatly reduced cost and size relative to hybrid solutions. Although significant effort has been devoted to Si light generation and modulation technologies, efficient and electrically pumped Si light emitters have yet to be demonstrated. In contrast, III–V semiconductor devices offer high efficiency as optical sources. Monolithic integration of III–V on the Si platform would thus be an effective approach for realizing Si-based light sources. Here, we describe the first superluminescent light-emitting diode (SLD) monolithically grown on Si substrates. The fabricated two-section InAs/GaAs quantum-dot (QD) SLD produces a close-to-Gaussian emission spectrum of 114 nm centered at 1255 nm wavelength, with a maximum output power of 2.6 mW at room temperature. This work complements our previous demonstration of an InAs/GaAs QD laser directly grown on a Si platform and paves the way for future monolithic integration of III–V light sources required for Si photonics

Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates

High-performance, multispectral, and large-format infrared focal plane arrays are the long-demanded third-generation infrared technique for hyperspectral imaging, infrared spectroscopy, and target identification. A promising solution is to monolithically integrate infrared photodetectors on a silicon platform, which offers not only low-cost but high-resolution focal plane arrays by taking advantage of the well-established Si-based readout integrated circuits. Here, we report the first InAs/GaAs quantum dot (QD) infrared photodetectors monolithically integrated on silicon substrates by molecular beam epitaxy. The III–V photodetectors are directly grown on silicon substrates by using a GaAs buffer, which reduces the threading dislocation density to ∼106 cm–2. The high-quality QDs grown on Si substrates have led to long photocarrier relaxation time and low dark current density. Mid-infrared photodetection up to ∼8 μm is also achieved at 80 K. This work demonstrates that III–V photodetectors can directly be integrated with silicon readout circuitry for realizing large-format focal plane arrays as well as mid-infrared photonics in silicon