Silicon implantation in GaAs

The electrical properties of room-temperature Si implants in GaAs have been studied. The implantations were done at 300 keV with doses ranging from 1.7×10^13 to 1.7×10^15 cm^–2. The implanted samples were annealed with silicon nitride encapsulants in H2 atmosphere for 30 min at temperatures ranging from 800 to 900°C to electrically activate the implanted ions. Results show that the implanted layers are n type, which implies that the Si ions preferentially go into Ga sites substitutionally. For low-dose implants, high (~90%) electrical activation of the implanted ions is achieved and the depth distribution of the free-electron concentration in the implanted layer roughly follows a Gaussian. However, for high-dose implants, the activation is poor (<15% for a 900 °C anneal) and the electron concentration profile is flat and deeper than the expected range

On X-Channels with Feedback and Delayed CSI

The sum degrees of freedom (DoF) of the two-user MIMO X-channel is characterized in the presence of output feedback and delayed channel state information (CSI). The number of antennas at each transmitters is assumed to be M and the number of antennas at each of the receivers is assumed to be N. It is shown that the sum DoF of the two-user MIMO X-channel is the same as the sum DoF of a two-user MIMO broadcast channel with 2M transmit antennas, and N antennas at each receiver. Hence, for this symmetric antenna configuration, there is no performance loss in the sum degrees of freedom due to the distributed nature of the transmitters. This result highlights the usefulness of feedback and delayed CSI for the MIMO X-channel. The K-user X-channel with single antenna at each transmitter and each receiver is also studied. In this network, each transmitter has a message intended for each receiver. For this network, it is shown that the sum DoF with partial output feedback alone is at least 2K/(K+1). This lower bound is strictly better than the best lower bound known for the case of delayed CSI assumption for all values of K.Comment: Submitted to IEEE ISIT 2012 on Jan 22, 201

Perfect Output Feedback in the Two-User Decentralized Interference Channel

In this paper, the $\eta$-Nash equilibrium ($\eta$-NE) region of the two-user Gaussian interference channel (IC) with perfect output feedback is approximated to within $1$ bit/s/Hz and $\eta$ arbitrarily close to $1$ bit/s/Hz. The relevance of the $\eta$-NE region is that it provides the set of rate-pairs that are achievable and stable in the IC when both transmitter-receiver pairs autonomously tune their own transmit-receive configurations seeking an $\eta$-optimal individual transmission rate. Therefore, any rate tuple outside the $\eta$-NE region is not stable as there always exists one link able to increase by at least $\eta$ bits/s/Hz its own transmission rate by updating its own transmit-receive configuration. The main insights that arise from this work are: $(i)$ The $\eta$-NE region achieved with feedback is larger than or equal to the $\eta$-NE region without feedback. More importantly, for each rate pair achievable at an $\eta$-NE without feedback, there exists at least one rate pair achievable at an $\eta$-NE with feedback that is weakly Pareto superior. $(ii)$ There always exists an $\eta$-NE transmit-receive configuration that achieves a rate pair that is at most $1$ bit/s/Hz per user away from the outer bound of the capacity region.Comment: Revised version (Aug. 2015

First-principles study of possible shallow donors in ZnAl2O4 spinel

ZnAl2O4 (gahnite) is a ceramic which is considered a possible transparent conducting oxide (TCO) due to its wide band gap and transparency for UV. Defects play an important role in controlling the conductivity of a TCO material along with the dopant, which is the main source of conductivity in an otherwise insulating oxide. A comprehensive first-principles density functional theory study for point defects in ZnAl2O4 spinel is presented using the Heyd, Scuseria, and Ernzerhof hybrid functional (HSE06) to overcome the band gap problem. We have investigated the formation energies of intrinsic defects which include the Zn, Al, and O vacancy and the antisite defects: Zn at the Al site (Zn-Al) and Al at the Zn site (Al-Zn). The antisite defect Al-Zn has the lowest formation energy and acts as a shallow donor, indicating possible n-type conductivity in ZnAl2O4 spinel by Al doping

Mutual Information in Frequency and its Application to Measure Cross-Frequency Coupling in Epilepsy

We define a metric, mutual information in frequency (MI-in-frequency), to detect and quantify the statistical dependence between different frequency components in the data, referred to as cross-frequency coupling and apply it to electrophysiological recordings from the brain to infer cross-frequency coupling. The current metrics used to quantify the cross-frequency coupling in neuroscience cannot detect if two frequency components in non-Gaussian brain recordings are statistically independent or not. Our MI-in-frequency metric, based on Shannon's mutual information between the Cramer's representation of stochastic processes, overcomes this shortcoming and can detect statistical dependence in frequency between non-Gaussian signals. We then describe two data-driven estimators of MI-in-frequency: one based on kernel density estimation and the other based on the nearest neighbor algorithm and validate their performance on simulated data. We then use MI-in-frequency to estimate mutual information between two data streams that are dependent across time, without making any parametric model assumptions. Finally, we use the MI-in- frequency metric to investigate the cross-frequency coupling in seizure onset zone from electrocorticographic recordings during seizures. The inferred cross-frequency coupling characteristics are essential to optimize the spatial and spectral parameters of electrical stimulation based treatments of epilepsy.Comment: This paper is accepted for publication in IEEE Transactions on Signal Processing and contains 15 pages, 9 figures and 1 tabl

Sequential nature of damage annealing and activation in implanted GaAs

Rapid thermal processing of implanted GaAs reveals a definitive sequence in the damage annealing and the electrical activation of ions. Removal of implantation-induced damage and restoration of GaAs crystallinity occurs first. Irrespective of implanted species, at this stage the GaAs is n-type and highly resistive with almost ideal values of electron mobility. Electrical activation is achieved next when, in a narrow anneal temperature window, the material becomes n- or p-type, or remains semi-insulating, commensurate to the chemical nature of the implanted ion. Such a two-step sequence in the electrical doping of GaAs by ion implantation may be unique of GaAs and other compound semiconductors

Acetoxy Boron Complexes of Ketamines

1054-105

Complexes of La(III), Pr(III) & Nd(III) with Nitrilotriacetic Acid as Primary Ligand & Hydroxy Acids as Secondary Ligands

914-91