Valley Polarization in Si(100) at Zero Magnetic Field

The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO$_2$/(100)Si/SiO$_2$ quantum well is examined through transport measurements. We demonstrate that the valley splitting can be observed directly as a step in the conductance defining a boundary between valley-unpolarized and polarized regions. This persists to well above liquid helium temperature and shows no dependence on magnetic field, indicating that single-particle valley splitting and valley-polarization exist in (100) silicon even at zero magnetic field.Comment: Accpeted for publication in Phys. Rev. Let

Global optical potential for nucleus-nucleus systems from 50 MeV/u to 400 MeV/u

We present a new global optical potential (GOP) for nucleus-nucleus systems, including neutron-rich and proton-rich isotopes, in the energy range of $50 \sim 400$ MeV/u. The GOP is derived from the microscopic folding model with the complex $G$-matrix interaction CEG07 and the global density presented by S{\~ a}o Paulo group. The folding model well accounts for realistic complex optical potentials of nucleus-nucleus systems and reproduces the existing elastic scattering data for stable heavy-ion projectiles at incident energies above 50 MeV/u. We then calculate the folding-model potentials (FMPs) for projectiles of even-even isotopes, $^{8-22}$C, $^{12-24}$O, $^{16-38}$Ne, $^{20-40}$Mg, $^{22-48}$Si, $^{26-52}$S, $^{30-62}$Ar, and $^{34-70}$Ca, scattered by stable target nuclei of $^{12}$C, $^{16}$O, $^{28}$Si, $^{40}$Ca $^{58}$Ni, $^{90}$Zr, $^{120}$Sn, and $^{208}$Pb at the incident energy of 50, 60, 70, 80, 100, 120, 140, 160, 180, 200, 250, 300, 350, and 400 MeV/u. The calculated FMP is represented, with a sufficient accuracy, by a linear combination of 10-range Gaussian functions. The expansion coefficients depend on the incident energy, the projectile and target mass numbers and the projectile atomic number, while the range parameters are taken to depend only on the projectile and target mass numbers. The adequate mass region of the present GOP by the global density is inspected in comparison with FMP by realistic density. The full set of the range parameters and the coefficients for all the projectile-target combinations at each incident energy are provided on a permanent open-access website together with a Fortran program for calculating the microscopic-basis GOP (MGOP) for a desired projectile nucleus by the spline interpolation over the incident energy and the target mass number.Comment: 25 pages, 13 figure

Pauli-Spin-Blockade Transport through a Silicon Double Quantum Dot

We present measurements of resonant tunneling through discrete energy levels of a silicon double quantum dot formed in a thin silicon-on-insulator layer. In the absence of piezoelectric phonon coupling, spontaneous phonon emission with deformation-potential coupling accounts for inelastic tunneling through the ground states of the two dots. Such transport measurements enable us to observe a Pauli spin blockade due to effective two-electron spin-triplet correlations, evident in a distinct bias-polarity dependence of resonant tunneling through the ground states. The blockade is lifted by the excited-state resonance by virtue of efficient phonon emission between the ground states. Our experiment demonstrates considerable potential for investigating silicon-based spin dynamics and spin-based quantum information processing.Comment: 10 pages,3 figure

Valley polarization assisted spin polarization in two dimensions

International audienceValleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such phenomena as the fractional quantum Hall effect and the metal-insulator transition. Here, we address the electrons' spin alignment in a magnetic field in silicon-on-insulator quantum wells under valley polarisation. In stark contrast to expectations from a non-interacting model, we show experimentally that less magnetic field can be required to fully spin polarise a valley-polarised system than a valley-degenerate one. Furthermore, we show that these observations are quantitatively described by parameter free ab initio quantum Monte Carlo simulations. We interpret the results as a manifestation of the greater stability of the spin and valley degenerate system against ferromagnetic instability and Wigner crystalisation which in turn suggests the existence of a new strongly correlated electron liquid at low electron densities

Enhanced collectivity in 74Ni

The neutron-rich nucleus 74Ni was studied with inverse-kinematics inelastic proton scattering using a 74Ni radioactive beam incident on a liquid hydrogen targetat a center-of-mass energy of 80 MeV. From the measured de-excitation gamma-rays, the population of the first 2+ state was quantified. The angle-integrated excitation cross section was determined to be 14(4) mb. A deformation length of delta = 1.04(16) fm was extracted in comparison with distorted wave theory, which suggests that the enhancement of collectivity established for 70Ni continues up to 74Ni. A comparison with results of shell model and quasi-particle random phase approximation calculations indicates that the magic character of Z = 28 or N = 50 is weakened in 74Ni

Metal-Insulator oscillations in a Two-dimensional Electron-Hole system

The electrical transport properties of a bipolar InAs/GaSb system have been studied in magnetic field. The resistivity oscillates between insulating and metallic behaviour while the quantum Hall effect shows a digital character oscillating from 0 to 1 conducatance quantum e^2/h. The insulating behaviour is attributed to the formation of a total energy gap in the system. A novel looped edge state picture is proposed associated with the appearance of a voltage between Hall probes which is symmetric on magnetic field reversal.Comment: 4 pages, 5 Postscript figures: revised versio

Field-induced polarisation of Dirac valleys in bismuth

Electrons are offered a valley degree of freedom in presence of particular lattice structures. Manipulating valley degeneracy is the subject matter of an emerging field of investigation, mostly focused on charge transport in graphene. In bulk bismuth, electrons are known to present a threefold valley degeneracy and a Dirac dispersion in each valley. Here we show that because of their huge in-plane mass anisotropy, a flow of Dirac electrons along the trigonal axis is extremely sensitive to the orientation of in-plane magnetic field. Thus, a rotatable magnetic field can be used as a valley valve to tune the contribution of each valley to the total conductivity. According to our measurements, charge conductivity by carriers of a single valley can exceed four-fifth of the total conductivity in a wide range of temperature and magnetic field. At high temperature and low magnetic field, the three valleys are interchangeable and the three-fold symmetry of the underlying lattice is respected. As the temperature lowers and/or the magnetic field increases, this symmetry is spontaneously lost. The latter may be an experimental manifestation of the recently proposed valley-nematic Fermi liquid state.Comment: 14 pages + 5 pages of supplementary information; a slightly modified version will appear as an article in Nature physic