The spin polarization of palladium on magneto-electric Cr\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e

While induced spin polarization of a palladium (Pd) overlayer on antiferromagnetic and magneto-electric Cr2O3(0001) is possible because of the boundary polarization at the Cr2O3(0001), in the single domain state, the Pd thin film appears to be ferromagnetic on its own, likely as a result of strain. In the conduction band, we find the experimental evidence of ferromagnetic spin polarized in Pd thin films on a Cr2O3(0001) single crystal, especially in the thin limit, Pd thickness of around 1–4 nm. Indeed there is significant spin polarization in 10 Å thick Pd films on Cr2O3(0001) at 310 K, i.e. above the Néel temperature of bulk Cr2O3. While Cr2O3(0001) has surface moments that tend to align along the surface normal, for Pd on Cr2O3, the spin polarization contains an in-plane component. Strain in the Pd adlayer on Cr2O3(0001) appears correlated to the spin polarization measured in spin polarized inverse photoemission spectroscopy. Further evidence for magnetization of Pd on Cr2O3 is provided by measurement of the exchange bias fields in Cr2O3/Pd(buffer)/[Co/Pd]n exchange bias systems. The magnitude of the exchange bias field is, over a wide temperature range, virtually unaffected by the Pd thickness variation between 1 and 2 nm

Evidence of Dynamical Spin Shielding in Ce from Spin-Resolved Photoelectron Spectroscopy

Using Fano effect measurements upon polycrystalline Ce, we have observed a phase reversal between the spectral structure at the Fermi edge and the other 4f derived feature near a binding energy of 2 eV. The Fano effect is the observation of spin polarized photoelectron emission from nonmagnetic materials, under chirally selective excitation, such as circularly polarized photons. The observation of phase reversal between the two peaks is a direct experimental proof of Kondo shielding in Ce, confirming the predictions of Gunnarsson and Shoenhammer, albeit with a small modification

Interfacial and Surface Magnetism in Epitaxial NiCo2O4(001)/MgAl2O4 Films

NiCo2O4 (NCO) films grown on MgAl2O4 (001) substrates have been studied using magnetometry, x-ray magnetic circular dichroism (XMCD) based on x-ray absorption spectroscopy, and spin-polarized inverse photoemission spectroscopy (SPIPES) with various thickness down to 1.6 nm. The magnetic behavior can be understood in terms of a layer of optimal NCO and an interfacial layer (1.2+/- 0.1 nm), with a small canting of magnetization at the surface. The thickness dependence of the optimal layer can be described by the finite-scaling theory with a critical exponent consistent with the high perpendicular magnetic anisotropy. The interfacial layer couples antiferromagnetically to the optimal layer, generating exchange-spring styled magnetic hysteresis in the thinnest films. The non-optimal and measurement-speed-dependent magnetic properties of the interfacial layer suggest substantial interfacial diffusion

Interfacial and Surface Magnetism in Epitaxial NiCo2O4(001)/MgAl2O4 Films

NiCo2O4 (NCO) films grown on MgAl2O4 (001) substrates have been studied using magnetometry, x-ray magnetic circular dichroism (XMCD) based on x-ray absorption spectroscopy, and spin-polarized inverse photoemission spectroscopy (SPIPES) with various thickness down to 1.6 nm. The magnetic behavior can be understood in terms of a layer of optimal NCO and an interfacial layer (1.2± 0.1 nm), with a small canting of magnetization at the surface. The thickness dependence of the optimal layer can be described by the finite-scaling theory with a critical exponent consistent with the high perpendicular magnetic anisotropy. The interfacial layer couples antiferromagnetically to the optimal layer, generating exchange-spring styled magnetic hysteresis in the thinnest films. The non-optimal and measurement-speed-dependent magnetic properties of the interfacial layer suggest substantial interfacial diffusion

Interfacial and surface magnetism in epitaxial NiCo\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e4\u3c/sub\u3e(001)/MgAl\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e4\u3c/sub\u3e films

NiCo2O4 (NCO) films grown on MgAl2O4 (001) substrates have been studied using magnetometry and x-ray magnetic circular dichroism based on x-ray absorption spectroscopy and spin-polarized inverse photoemission spectroscopy with various thicknesses down to 1.6 nm. The magnetic behavior can be understood in terms of a layer of optimal NCO and an interfacial layer (1.2 ± 0.1 nm), with a small canting of magnetization at the surface. The thickness dependence of the optimal layer can be described by the finite-scaling theory with a critical exponent consistent with the high perpendicular magnetic anisotropy. The interfacial layer couples antiferromagnetically to the optimal layer, generating exchange-spring styled magnetic hysteresis in the thinnest films. The non-optimal and measurement-speed-dependent magnetic properties of the interfacial layer suggest substantial interfacial diffusion

The bulk band structure and inner potential of layered In\u3csub\u3e4\u3c/sub\u3eSe\u3csub\u3e3\u3c/sub\u3e

The layered In4Se3 system does have a bulk band structure (i.e. discernible and significant band dispersion) perpendicular to the cleavage plane. Band widths (the extent of dispersion) of 300 meV or more are observed, for In-p and Se-p weighted bands within the valence region, and is indicative of a bulk band structure. Two-dimensionality of state is clearly not conserved, and there must exist interactions between layers sufficient to support a bulk band structure

Voltage controlled Néel vector rotation in zero magnetic field

Multi-functional thin films of boron (B) doped Cr2O3 exhibit voltage-controlled and nonvolatile Néel vector reorientation in the absence of an applied magnetic field, H. Toggling of antiferromagnetic states is demonstrated in prototype device structures at CMOS compatible temperatures between 300 and 400 K. The boundary magnetization associated with the Néel vector orientation serves as state variable which is read via magnetoresistive detection in a Pt Hall bar adjacent to the B:Cr2O3 film. Switching of the Hall voltage between zero and non-zero values implies Néel vector rotation by 90 degrees. Combined magnetometry, spin resolved inverse photoemission, electric transport and scanning probe microscopy measurements reveal B-dependent TN and resistivity enhancement, spin-canting, anisotropy reduction, dynamic polarization hysteresis and gate voltage dependent orientation of boundary magnetization. The combined effect enables H = 0, voltage controlled, nonvolatile Néel vector rotation at high-temperature. Theoretical modeling estimates switching speeds of about 100 ps making B:Cr2O3 a promising multifunctional single-phase material for energy efficient nonvolatile CMOS compatible memory applications

Detection of decoupled surface and bulk states in epitaxial orthorhombic SrIrO3 thin films

We report the experimental evidence of evolving lattice distortion in high quality epitaxial orthorhombic SrIrO3(001) thin films fully strained on (001) SrTiO3 substrates. Angle-resolved X-ray photoemission spectroscopy studies show that the surface layer of 5 nm SrIrO3 films is Sr–O terminated, and subsequent layers recover the semimetallic state, with the band structure consistent with an orthorhombic SrIrO3(001) having the lattice constant of the substrate. While there is no band folding in the experimental band structure, additional super-periodicity is evident in low energy electron diffraction measurements, suggesting the emergence of a transition layer with crystal symmetry evolving from the SrTiO3 substrate to the SrIrO3(001) surface. Our study sheds light on the misfit relaxation mechanism in epitaxial SrIrO3 thin films in the orthorhombic phase, which is metastable in bulk

Occupied and unoccupied electronic structure of Na doped MoS2(0001)

The influence of sodium on the band structure of MoS2(0001) and the comparison of the experimental band dispersion with density functional theory show excellent agreement for the occupied states (angle-resolved photoemission) and qualitative agreement for the unoccupied states (inverse photoemission spectroscopy). Na-adsorption leads to charge transfer to the MoS2 surface causing an effect similar to n-type doping of a semiconductor. The MoS2 occupied valence band structure shifts rigidly to greater binding with little change in the occupied state dispersion. Likewise, the unoccupied states shift downward, approaching the Fermi level, yet the amount of the shift for the unoccupied states is greater than that of the occupied states, effectively causing a narrowing of the MoS2 bandgap