22 research outputs found
Concentrated solutions of polymers—IV. Viscosity of solutions of polystyrene in various solvents
No full textCurrent instability and burnout under MESFET gate breakdown
Get PDFThe gate burnout (irreversible breakdown) of GaAs MESFET has been studied using two-dimensional (2-D) numerical simulation and experimental measurements of 10 ns pulsed gate-source I-V characteristics. It is shown, that at some critical level of gate avalanche current the gate current instability appears. The instability results in formation of a negative differential conductivity (NDC) region on the S-shape gate-source I-V characteristic, spatial instability of avalanche current and formation of high density current filaments
Some remarks on the article by Yu. I. Temchin, E. F. Burmistrov, A. N. Medvedev and others: “The volatility of stabilizers and their compatibility with polymers”
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Temperature and Frequency Dependences of Dissipative Properties of Rigid Vibration-Damping Coatings
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Photoelastically active polymers with different moduli prepared from bis(cyclopentadienyl) oligomers for use in photoelastic model analysis
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