Multiple Andreev reflections in diffusive SNS structures

We report new measurements on sup-gap energy structure originating from multiple Andreev reflections in mesoscopic SNS junctions. The junctions were fabricated in a planar geometry with high transparency superconducting contacts of Al deposited on highly diffusive and surface d-doped n++-GaAs. For samples with a normal GaAs region of active length 0.3um the Josephson effect with a maximal supercurrent Ic=3mA at T=237mK was observed. The sub-gap structure was observed as a series of local minima in the differential resistance at dc bias voltages V=2D/ne with n=1,2,4 i.e. only the even sub-gap positions. While at V=2D/e (n=1) only one dip is observed, the n=2, and the n=4 sub-gap structures each consists of two separate dips in the differential resistance. The mutual spacing of these two dips is independent of temperature, and the mutual spacing of the n=4 dips is half of the spacing of the n=2 dips. The voltage bias positions of the sub-gap differential resistance minima coincide with the maxima in the oscillation amplitude when a magnetic field is applied in an interferometer configuration, where one of the superconducting electrodes has been replaced by a flux sensitive open loop.Comment: 20 pages, 7 figure

Observation of supercurrent enhancement in SNS junctions by non-equilibrium injection into supercurrent carrying bound Andreev states

We report for the first time enhancement of the supercurrent by means of injection in a mesoscopic three terminal planar SNSNS device made of Al on GaAs. When a current is injected from one of the superconducting Al electrodes at an injection bias $V=\Delta(T)/e$, the DC Josephson current between the other two superconducting electrodes has a maximum, giving evidence for an enhancement due to a non-equilibrium injection into bound Andreev states of the underlying semiconductor. The effect persists to temperatures where the equilibrium supercurrent has vanished.Comment: 7 pages + 3 figures. Resubmitted to Phys. Rev. Lett. Contents change