Effect of Interdot Resistance on Single Electron Devices with Silicon Multi Dots

The effect of interdot resistance on single electron devices with Si (silicon) multi dots has been studied in this work. The devices were fabricated by a fabrication method consisting of three steps, i.e., sample preparation by wafer bonding technique, formation of Si dots and formation of Si channel and electrodes. It was found that the interdot resistance, which is influenced by the thickness of the interdot barrier region, determines the localization of the carrier. The device with strong carrier localization reveals the current oscillations on the drain current versus gate voltage characteristics. Such characteristics are caused by the Coulomb blockade effect, and this means that the device works based on single electron phenomenon. These results indicate that the interdot resistance plays an essential role on the device operation

Observation of Photovoltaic Effect and Single-photon Detection in Nanowire Silicon Pn-junction

We  study  nanowire  silicon  pin  and  pn-junctions  at  room  and  low  temperature.  Photovoltaic  effects  are  observed  for both devices at room temperature. At low temperature, nanowire pn-junction devices show their ability to detect single photon. This ability was not been observed for pin devices. Phosphorus-boron dopant cluster in the depletion region is considered  to  have  the  main  role  for  single-photon  detection  capability.  Fundamental  mechanism  of  dopant-based single-photon detection in nanowire pn-junction is described in details

Observation of Photovoltaic Effect and Single-photon Detection in Nanowire Silicon pn-junction

We  study  nanowire  silicon  pin  and  pn-junctions  at  room  and  low  temperature.  Photovoltaic  effects  are  observed  for both devices at room temperature. At low temperature, nanowire pn-junction devices show their ability to detect single photon. This ability was not been observed for pin devices. Phosphorus-boron dopant cluster in the depletion region is considered  to  have  the  main  role  for  single-photon  detection  capability.  Fundamental  mechanism  of  dopant-based single-photon detection in nanowire pn-junction is described in details.Keywords: dopant cluster, nanowire pn-junction, single dopant, single photo

Atom devices based on single dopants in silicon nanostructures

Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. Such technological trend brought us to a research stage on devices working with one or a few dopant atoms. In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as single-dopant transistors, preliminary memory devices, single-electron turnstile devices and photonic devices, in which electron tunneling mediated by single dopant atoms is the essential transport mechanism. Furthermore, observation of individual dopant potential in the channel by Kelvin probe force microscopy is also presented. These results may pave the way for the development of a new device technology, i.e., single-dopant atom electronics

Physics of Strongly-coupled Dopant-atoms in Nanodevices

In silicon nanoscale transistors, dopant atoms can significantly affect the transport characteristics, in particular at low temperatures. Investigation of coupling between neighboring dopants in such devices is essential in defining the properties for transport. In this work, we present an overview of different regimes of inter-dopant coupling, controlled by doping concentration and a selective doping process. Tunneling-transport spectroscopy can reveal the fundamental physics of isolated dopants in comparison with strongly-coupled dopants. In addition, observations of surface potential for Si nano-transistors can provide direct access to understanding the behavior of coupled dopants

A photon position sensor consisting of single-electron circuits

This paper proposes a solid-state sensor that can detect the position of incident photons with a high spatial resolution. The sensor consists of a two-dimensional array of single-electron oscillators, each coupled to its neighbors through coupling capacitors. An incident photon triggers an excitatory circular wave of electron tunneling in the oscillator array. The wave propagates in all directions to reach the periphery of the array. By measuring the arrival time of the wave at the periphery, we can know the position of the incident photon. The tunneling wave's generation, propagation, arrival at the array periphery, and the determination of incident photon positions are demonstrated with the results of Monte-Carlo based computer simulations

Untitled - Foreword

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Special issue on 2005 Silicon Nanoelectronics Workshop - Foreword

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